| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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WMO90N02T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 90A Pulsed drain current: 222A Power dissipation: 39W Case: TO252 Gate-source voltage: ±10V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 445 шт: термін постачання 21-30 дні (днів) |
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WMO90N02T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 90A Pulsed drain current: 222A Power dissipation: 39W Case: TO252 Gate-source voltage: ±10V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 445 шт: термін постачання 14-21 дні (днів) |
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WMO90P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -90A; Idm: -360A; 69.4W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -90A Pulsed drain current: -360A Power dissipation: 69.4W Case: TO252 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 93.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| WMO90R830S | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7A; 73W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 900V Drain current: 7A Power dissipation: 73W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.83Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WMO95P06TS | WAYON | WMO95P06TS-CYG SMD P channel transistors |
на замовлення 1996 шт: термін постачання 14-21 дні (днів) |
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WMO96N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 96A; Idm: 380A; 62.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 96A Pulsed drain current: 380A Power dissipation: 62.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 338 шт: термін постачання 21-30 дні (днів) |
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WMO96N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 96A; Idm: 380A; 62.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 96A Pulsed drain current: 380A Power dissipation: 62.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 338 шт: термін постачання 14-21 дні (днів) |
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| WMO9N50D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 104W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Pulsed drain current: 36A Power dissipation: 104W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WMO9N65D1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 9A; Idm: 36A; 150W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 150W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 30nC Pulsed drain current: 36A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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WMP04N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3A Power dissipation: 29W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP04N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3A Power dissipation: 29W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
на замовлення 358 шт: термін постачання 21-30 дні (днів) |
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WMP04N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3A Power dissipation: 29W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 кількість в упаковці: 1 шт |
на замовлення 358 шт: термін постачання 14-21 дні (днів) |
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| WMP04N70C2 | WAYON | WMP04N70C2-CYG THT N channel transistors |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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| WMP05N65MM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; TO251 Type of transistor: N-MOSFET Technology: WMOS™ MM Polarisation: unipolar Drain-source voltage: 650V Case: TO251 On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WMP05N80M3 | WAYON | WMP05N80M3-CYG THT N channel transistors |
на замовлення 2 шт: термін постачання 14-21 дні (днів) |
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WMP07N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
на замовлення 426 шт: термін постачання 21-30 дні (днів) |
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WMP07N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 кількість в упаковці: 1 шт |
на замовлення 426 шт: термін постачання 14-21 дні (днів) |
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WMP07N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Power dissipation: 42W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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WMP07N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Power dissipation: 42W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 36 шт: термін постачання 14-21 дні (днів) |
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WMP07N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.8A Power dissipation: 55W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ M3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP08N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 70W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP09N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO251 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP09N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 45W Case: TO251 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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WMP09N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 45W Case: TO251 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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| WMP09N70C2 | WAYON | WMP09N70C2-CYG THT N channel transistors |
на замовлення 4 шт: термін постачання 14-21 дні (днів) |
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WMP09N90C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.8A Pulsed drain current: 16A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.37Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
на замовлення 687 шт: термін постачання 21-30 дні (днів) |
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WMP09N90C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.8A Pulsed drain current: 16A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.37Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 687 шт: термін постачання 14-21 дні (днів) |
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WMP10N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 57W Case: TO251 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP10N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 57W Case: TO251 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP10N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 57W Case: TO251 Gate-source voltage: ±30V On-state resistance: 920mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP10N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| WMP119N10LG2 | WAYON | WMP119N10LG2-CYG THT N channel transistors |
на замовлення 31 шт: термін постачання 14-21 дні (днів) |
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WMP11N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 63W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 125 шт: термін постачання 21-30 дні (днів) |
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WMP11N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 63W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 125 шт: термін постачання 14-21 дні (днів) |
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| WMP11N70C2 | WAYON | WMP11N70C2-CYG THT N channel transistors |
на замовлення 307 шт: термін постачання 14-21 дні (днів) |
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WMP11N80M3 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.5A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP12N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 12A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 620mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP14N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
на замовлення 208 шт: термін постачання 21-30 дні (днів) |
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WMP14N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 кількість в упаковці: 1 шт |
на замовлення 208 шт: термін постачання 14-21 дні (днів) |
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WMP14N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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WMP14N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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WMP16N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP16N60FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP16N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP16N65FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP16N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP20N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMP20N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WMPN40N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Pulsed drain current: 160A Power dissipation: 462W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 165.3nC Kind of package: tube Kind of channel: enhancement |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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WMPN40N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Pulsed drain current: 160A Power dissipation: 462W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 165.3nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 209 шт: термін постачання 14-21 дні (днів) |
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WMQ020N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Pulsed drain current: 472A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
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WMQ020N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Pulsed drain current: 472A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 65 шт: термін постачання 14-21 дні (днів) |
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WMQ023N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 248A Power dissipation: 46.2W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
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WMQ023N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 248A Power dissipation: 46.2W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 75 шт: термін постачання 14-21 дні (днів) |
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| WMQ032N04LG2 | WAYON | WMQ032N04LG2-CYG SMD N channel transistors |
на замовлення 36 шт: термін постачання 14-21 дні (днів) |
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WMQ040N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Pulsed drain current: 170A Power dissipation: 24.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 15.9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 323 шт: термін постачання 21-30 дні (днів) |
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WMQ040N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Pulsed drain current: 170A Power dissipation: 24.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 15.9nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 323 шт: термін постачання 14-21 дні (днів) |
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| WMQ048NV6HG4 | WAYON | WMQ048NV6HG4-CYG SMD N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| WMQ048NV6LG4 | WAYON | WMQ048NV6LG4-CYG SMD N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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WMQ050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 200A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 475 шт: термін постачання 21-30 дні (днів) |
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| WMO90N02T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 222A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 222A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 445 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.02 грн |
| 27+ | 15.41 грн |
| 35+ | 11.70 грн |
| 100+ | 10.33 грн |
| 250+ | 9.20 грн |
| WMO90N02T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 222A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 222A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 445 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.62 грн |
| 16+ | 19.20 грн |
| 25+ | 14.04 грн |
| 100+ | 12.39 грн |
| 250+ | 11.04 грн |
| 1000+ | 10.75 грн |
| WMO90P03TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -90A; Idm: -360A; 69.4W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -90A
Pulsed drain current: -360A
Power dissipation: 69.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 93.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -90A; Idm: -360A; 69.4W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -90A
Pulsed drain current: -360A
Power dissipation: 69.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 93.3nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMO90R830S |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7A; 73W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Power dissipation: 73W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.83Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7A; 73W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Power dissipation: 73W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.83Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMO95P06TS |
Виробник: WAYON
WMO95P06TS-CYG SMD P channel transistors
WMO95P06TS-CYG SMD P channel transistors
на замовлення 1996 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.84 грн |
| 26+ | 44.24 грн |
| 71+ | 41.82 грн |
| WMO96N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 96A; Idm: 380A; 62.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 96A
Pulsed drain current: 380A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 96A; Idm: 380A; 62.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 96A
Pulsed drain current: 380A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 338 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.02 грн |
| 25+ | 16.14 грн |
| 28+ | 14.52 грн |
| 100+ | 12.83 грн |
| 250+ | 11.62 грн |
| WMO96N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 96A; Idm: 380A; 62.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 96A
Pulsed drain current: 380A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 96A; Idm: 380A; 62.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 96A
Pulsed drain current: 380A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 338 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.62 грн |
| 15+ | 20.11 грн |
| 25+ | 17.43 грн |
| 100+ | 15.39 грн |
| 250+ | 13.94 грн |
| 1000+ | 13.46 грн |
| WMO9N50D1B |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 104W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 104W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 104W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 104W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMO9N65D1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 9A; Idm: 36A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 9A; Idm: 36A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 36A
товару немає в наявності
В кошику
од. на суму грн.
| WMP04N60C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
товару немає в наявності
В кошику
од. на суму грн.
| WMP04N65C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
на замовлення 358 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.00 грн |
| 22+ | 18.39 грн |
| 25+ | 16.46 грн |
| 80+ | 14.68 грн |
| WMP04N65C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
кількість в упаковці: 1 шт
на замовлення 358 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.60 грн |
| 14+ | 22.92 грн |
| 25+ | 19.75 грн |
| 80+ | 17.62 грн |
| 480+ | 16.94 грн |
| WMP04N70C2 |
Виробник: WAYON
WMP04N70C2-CYG THT N channel transistors
WMP04N70C2-CYG THT N channel transistors
на замовлення 10 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.73 грн |
| 60+ | 19.36 грн |
| 163+ | 18.30 грн |
| WMP05N65MM |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO251
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO251
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP05N80M3 |
Виробник: WAYON
WMP05N80M3-CYG THT N channel transistors
WMP05N80M3-CYG THT N channel transistors
на замовлення 2 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 156.39 грн |
| 52+ | 21.98 грн |
| 143+ | 20.81 грн |
| WMP07N60C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
на замовлення 426 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.13 грн |
| 18+ | 22.91 грн |
| 25+ | 19.93 грн |
| 80+ | 18.72 грн |
| WMP07N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
кількість в упаковці: 1 шт
на замовлення 426 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 62.56 грн |
| 11+ | 28.55 грн |
| 25+ | 23.91 грн |
| 80+ | 22.46 грн |
| 480+ | 21.78 грн |
| WMP07N70C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.62 грн |
| 29+ | 14.20 грн |
| 33+ | 12.59 грн |
| WMP07N70C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 36 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.75 грн |
| 18+ | 17.69 грн |
| 25+ | 15.10 грн |
| 100+ | 13.55 грн |
| 504+ | 12.97 грн |
| WMP07N80M3 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
товару немає в наявності
В кошику
од. на суму грн.
| WMP08N80M3 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP09N60C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP09N65C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 434.41 грн |
| WMP09N65C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 312.78 грн |
| 5+ | 60.32 грн |
| 25+ | 24.40 грн |
| 100+ | 22.17 грн |
| 504+ | 21.88 грн |
| WMP09N70C2 |
Виробник: WAYON
WMP09N70C2-CYG THT N channel transistors
WMP09N70C2-CYG THT N channel transistors
на замовлення 4 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 78.19 грн |
| 46+ | 25.07 грн |
| 125+ | 23.72 грн |
| WMP09N90C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.37Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.37Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 687 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.87 грн |
| 10+ | 44.37 грн |
| 25+ | 40.02 грн |
| WMP09N90C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.37Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.37Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 687 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.64 грн |
| 6+ | 55.29 грн |
| 25+ | 48.02 грн |
| WMP10N60C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP10N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP10N70C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP10N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP119N10LG2 |
Виробник: WAYON
WMP119N10LG2-CYG THT N channel transistors
WMP119N10LG2-CYG THT N channel transistors
на замовлення 31 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.81 грн |
| 37+ | 31.17 грн |
| 101+ | 29.53 грн |
| WMP11N65C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 125 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.60 грн |
| 11+ | 37.27 грн |
| 25+ | 32.51 грн |
| 80+ | 29.45 грн |
| WMP11N65C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 125 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.73 грн |
| 7+ | 46.45 грн |
| 25+ | 39.02 грн |
| 80+ | 35.34 грн |
| 480+ | 33.98 грн |
| WMP11N70C2 |
Виробник: WAYON
WMP11N70C2-CYG THT N channel transistors
WMP11N70C2-CYG THT N channel transistors
на замовлення 307 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.71 грн |
| 32+ | 36.30 грн |
| 87+ | 34.27 грн |
| WMP11N80M3 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP12N80M3 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP14N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
на замовлення 208 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.39 грн |
| 10+ | 41.79 грн |
| 25+ | 36.95 грн |
| 72+ | 36.79 грн |
| WMP14N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
кількість в упаковці: 1 шт
на замовлення 208 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 52.08 грн |
| 25+ | 44.34 грн |
| 72+ | 44.15 грн |
| WMP14N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 80.68 грн |
| WMP14N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 60.32 грн |
| 25+ | 49.76 грн |
| 72+ | 46.28 грн |
| WMP16N60C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP16N60FD |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP16N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP16N65FD |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP16N70C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP20N60C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMP20N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMPN40N50D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 206.78 грн |
| 5+ | 171.84 грн |
| 30+ | 151.67 грн |
| 120+ | 144.41 грн |
| WMPN40N50D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 209 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 248.14 грн |
| 5+ | 214.14 грн |
| 30+ | 182.01 грн |
| 120+ | 173.29 грн |
| WMQ020N03LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 65 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 62.56 грн |
| 12+ | 34.85 грн |
| 25+ | 31.46 грн |
| WMQ020N03LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 65 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.07 грн |
| 10+ | 43.43 грн |
| 25+ | 37.76 грн |
| 100+ | 33.30 грн |
| 500+ | 30.88 грн |
| 3000+ | 29.14 грн |
| WMQ023N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 248A
Power dissipation: 46.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 248A
Power dissipation: 46.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 75 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.00 грн |
| 12+ | 34.05 грн |
| 25+ | 30.58 грн |
| WMQ023N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 248A
Power dissipation: 46.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 248A
Power dissipation: 46.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 75 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.60 грн |
| 10+ | 42.43 грн |
| 25+ | 36.69 грн |
| 100+ | 32.53 грн |
| 500+ | 30.11 грн |
| 3000+ | 28.17 грн |
| WMQ032N04LG2 |
Виробник: WAYON
WMQ032N04LG2-CYG SMD N channel transistors
WMQ032N04LG2-CYG SMD N channel transistors
на замовлення 36 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.10 грн |
| 39+ | 29.82 грн |
| 106+ | 28.17 грн |
| WMQ040N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Pulsed drain current: 170A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Pulsed drain current: 170A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 323 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.02 грн |
| 24+ | 17.51 грн |
| 28+ | 14.52 грн |
| 100+ | 12.75 грн |
| WMQ040N03LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Pulsed drain current: 170A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Pulsed drain current: 170A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 323 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.62 грн |
| 14+ | 21.82 грн |
| 25+ | 17.43 грн |
| 100+ | 15.30 грн |
| 500+ | 14.23 грн |
| 3000+ | 13.46 грн |
| WMQ048NV6HG4 |
Виробник: WAYON
WMQ048NV6HG4-CYG SMD N channel transistors
WMQ048NV6HG4-CYG SMD N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.17 грн |
| 38+ | 30.21 грн |
| 104+ | 28.56 грн |
| 12000+ | 28.55 грн |
| WMQ048NV6LG4 |
Виробник: WAYON
WMQ048NV6LG4-CYG SMD N channel transistors
WMQ048NV6LG4-CYG SMD N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.17 грн |
| 38+ | 30.21 грн |
| 104+ | 28.56 грн |
| 12000+ | 28.55 грн |
| WMQ050N03LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 475 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.28 грн |
| 29+ | 14.12 грн |
| 35+ | 11.78 грн |
| 100+ | 11.13 грн |








