Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (122989) > Сторінка 2045 з 2050
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PVA3354NSPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.2V DC Control current max.: 25mA Max. operating current: 150mA Manufacturer series: PVA On-state resistance: 24Ω Mounting: SMT Case: SMD8 Body dimensions: 9.39x6.47x3.93mm Insulation voltage: 4kV Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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| S80KS2564GACHV040 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Mounting: SMD Operating temperature: -40...105°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | |||||||||||||||||
| S80KS2562GABHI020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Mounting: SMD Operating temperature: -40...85°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | |||||||||||||||||
| S80KS2562GABHB023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: reel; tape Mounting: SMD Operating temperature: -40...105°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| S80KS2563GABHI020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Mounting: SMD Operating temperature: -40...85°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | |||||||||||||||||
| S80KS2564GACHI040 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Mounting: SMD Operating temperature: -40...85°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | |||||||||||||||||
| S80KS2564GACHI043 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| S80KS2564GACHV043 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: reel; tape Mounting: SMD Operating temperature: -40...105°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
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ITS4880R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.625A; Ch: 8; N-Channel; SMD; BSSOP36 Type of integrated circuit: power switch Mounting: SMD Number of channels: 8 Case: BSSOP36 Kind of output: N-Channel On-state resistance: 0.15Ω Output current: 0.625A Supply voltage: 11...45V DC Technology: Industrial PROFET Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSC059N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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BSC016N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Technology: OptiMOS™ |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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BTS3405G | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 0.35A; Ch: 2; N-Channel; SMD; HITFET® Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 0.35A Number of channels: 2 Mounting: SMD Case: PG-DSO-8-25 On-state resistance: 0.35Ω Kind of output: N-Channel Technology: HITFET® Output voltage: 10V |
на замовлення 2075 шт: термін постачання 14-30 дні (днів) |
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| CY8C4013SXI-400 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: CY8C4013SXI-400 |
на замовлення 2716 шт: термін постачання 14-30 дні (днів) |
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| BGS12SN6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switchesDescription: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz Mounting: SMD Number of channels: 2 Supply voltage: 1.8...3.5V DC Bandwidth: 0.1...6GHz Case: TSNP6 Type of integrated circuit: RF switch Output configuration: SPDT Application: telecommunication |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | |||||||||||||||||
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IRFR4615TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 33A Power dissipation: 144W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
| DD750S65K3NOSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Module: diode Type of semiconductor module: diode |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | |||||||||||||||||
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BSO110N03MSGXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.1A Power dissipation: 1.56W Case: PG-DSO-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
на замовлення 2483 шт: термін постачання 14-30 дні (днів) |
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| CY7C53150-20AXI | INFINEON TECHNOLOGIES |
Category: Ethernet interfaces -integrated circuitsDescription: CY7C53150-20AXI |
на замовлення 70 шт: термін постачання 14-30 дні (днів) |
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TZ240N36KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modulesDescription: Module: thyristor; single thyristor; 3.6kV; 240A; BG-PB501-1 Type of semiconductor module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 3.6kV Load current: 240A Case: BG-PB501-1 Max. forward voltage: 3.43V Max. forward impulse current: 6.1kA Gate current: 300mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AIMBG120R060M1XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 1.2kV; 38A; 202W; D2PAK-7 Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 38A Power dissipation: 202W Case: D2PAK-7 Gate-source voltage: -5...23V On-state resistance: 75mΩ Mounting: SMD Gate charge: 32nC Kind of channel: enhancement Application: automotive industry |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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BCR148SH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 100MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 2035 шт: термін постачання 14-30 дні (днів) |
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BSP317PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223 Kind of channel: enhancement Case: PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Mounting: SMD Polarisation: unipolar Drain-source voltage: -250V Drain current: -0.43A Power dissipation: 1.8W On-state resistance: 4Ω Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF7351TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 1944 шт: термін постачання 14-30 дні (днів) |
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TT142N14KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 142A Case: BG-PB34-1 Max. forward voltage: 1.56V Max. forward impulse current: 4.8kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS50080-1TMB | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 9.5A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-7-12 On-state resistance: 7mΩ Supply voltage: 5.5...38V DC Technology: High Current PROFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSS315PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23 Technology: OptiMOS™ P2 Case: PG-SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A On-state resistance: 0.15Ω Power dissipation: 0.5W Gate-source voltage: ±20V |
на замовлення 3379 шт: термін постачання 14-30 дні (днів) |
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BSS126IXTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 21mA Power dissipation: 0.5W Case: SOT23 On-state resistance: 280Ω Mounting: SMD Gate charge: 1.4nC Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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IPB012N04NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 40V; 197A; 250W; D2PAK,TO263 Case: D2PAK; TO263 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Gate charge: 159nC On-state resistance: 1.25mΩ Drain-source voltage: 40V Drain current: 197A Power dissipation: 250W |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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TLD21413EPXUMA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA Type of integrated circuit: driver Kind of integrated circuit: high-side; LED driver Technology: Litix™ Case: PG-SSOP-14-EP Output current: 80mA Number of channels: 3 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V DC Protection: overheating OTP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE42764GVATMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 2.5...20V Output current: 0.4A Case: PG-TO263-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.5...41V |
на замовлення 695 шт: термін постачання 14-30 дні (днів) |
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TLE42764GV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.4A Case: PG-TO263-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.5...41V |
на замовлення 977 шт: термін постачання 14-30 дні (днів) |
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| TLE42744GSV33HTMA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; PG-SOT223-4 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 3.3V Output current: 0.4A Case: PG-SOT223-4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.7...40V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLE42744DV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.4A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 5.5...40V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE42764DVATMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 2.5...20V Output current: 0.4A Case: PG-TO252-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.5...40V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE42764DV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.4A Case: PG-TO252-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.5...41V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| IMCQ120R034M2HXTMA1 | INFINEON TECHNOLOGIES |
Category: Transistors - Unclassified Description: IMCQ120R034M2HXTMA1 |
на замовлення 2250 шт: термін постачання 14-30 дні (днів) |
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IPB090N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 71W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IPD200N15N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W Power dissipation: 150W Case: PG-TO252-3 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar On-state resistance: 20mΩ Gate-source voltage: ±20V Drain current: 40A Drain-source voltage: 150V Pulsed drain current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ESD230B1W0201E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 56W; 6.05V; 3A; bidirectional; SG-WLL-2-1 Type of diode: TVS Version: ESD Peak pulse power dissipation: 56W Max. off-state voltage: 5.5V Breakdown voltage: 6.05V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: SG-WLL-2-1 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | |||||||||||||||||
| PVT322S-TPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state Type of relay: solid state |
на замовлення 750 шт: термін постачання 14-30 дні (днів) |
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| ICE5AR4780BZSXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.6A Frequency: 0.1MHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...140°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 800V Duty cycle factor: 0...80% Power: 27.5/15/16W Application: SMPS Operating voltage: 10...25.5V DC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
| ICE5AR4770BZSXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 2.2A; 100kHz; Ch: 1; DIP7; flyback; 0÷80% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.2A Frequency: 0.1MHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...140°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 700V Duty cycle factor: 0...80% Power: 26.5/14.5/16W Application: SMPS Operating voltage: 10...25.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRFS4115TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 70A Pulsed drain current: 396A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12.1mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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BCW60BE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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BSP372NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 1067 шт: термін постачання 14-30 дні (днів) |
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XMC4800F100F1024AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LQFP-100 Memory: 200kB SRAM; 1MB FLASH Number of inputs/outputs: 75 Supply voltage: 3.3V DC Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 18 Kind of architecture: Cortex M4 Family: XMC4800 Operating temperature: -40...85°C Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| S26KS256SDPBHB023 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Application: automotive Kind of memory: NOR Type of integrated circuit: FLASH memory Case: FBGA24 Interface: HyperBus Kind of package: reel; tape Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating voltage: 1.7...1.95V Operating frequency: 166MHz Memory: 256Mb FLASH |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| S26KS256SDPBHI020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Kind of memory: NOR Type of integrated circuit: FLASH memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7...1.95V Operating frequency: 166MHz Memory: 256Mb FLASH |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | |||||||||||||||||
| S26KS256SDPBHM020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Application: automotive Kind of memory: NOR Type of integrated circuit: FLASH memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Operating voltage: 1.7...1.95V Operating frequency: 166MHz Memory: 256Mb FLASH |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | |||||||||||||||||
| S26KS256SDPBHV020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Kind of memory: NOR Type of integrated circuit: FLASH memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating voltage: 1.7...1.95V Operating frequency: 166MHz Memory: 256Mb FLASH |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | |||||||||||||||||
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IPB065N15N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Mounting: SMD Technology: OptiMOS™ 3 Polarisation: unipolar On-state resistance: 6.5mΩ Gate-source voltage: ±20V Drain current: 130A Drain-source voltage: 150V Power dissipation: 300W Case: PG-TO263-3 Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
| CY8C4248LTI-L485 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; 48MHz; 256kBFLASH; Features: DMA,PoR,PWM Type of integrated circuit: ARM microcontroller Clock frequency: 48MHz Memory: 256kB FLASH Number of inputs/outputs: 57 Number of 16bit timers: 8 Mounting: SMD Interface: I2C; IrDA; Microwire; Smart Card; SPI; SSP; UART; USART; USB Integrated circuit features: DMA; PoR; PWM Kind of architecture: Cortex M0 Family: ARM Operating temperature: -40...85°C Kind of core: 32-bit Peripherial: DMA; POR |
на замовлення 260 шт: термін постачання 14-30 дні (днів) |
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ITS4200SMEOHUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of integrated circuit: high-side Technology: Industrial PROFET Kind of output: N-Channel Type of integrated circuit: power switch Case: SOT223-4 On-state resistance: 0.15Ω Output current: 0.7A Number of channels: 1 Supply voltage: 11...45V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| ITS4200SMENHUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of integrated circuit: high-side Technology: Industrial PROFET Kind of output: N-Channel Type of integrated circuit: power switch Case: SOT223-4 On-state resistance: 0.16Ω Output current: 0.7A Number of channels: 1 Supply voltage: 5...34V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPP50R190CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 18.5A Power dissipation: 127W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 244 шт: термін постачання 14-30 дні (днів) |
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IRFB4620PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 25A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 72.5mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
на замовлення 288 шт: термін постачання 14-30 дні (днів) |
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IPW60R075CPFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3 Mounting: THT Type of transistor: N-MOSFET Case: PG-TO247-3 Kind of package: tube Polarisation: unipolar On-state resistance: 75mΩ Gate-source voltage: ±20V Drain current: 39A Power dissipation: 313W Drain-source voltage: 600V Technology: CoolMOS™ CP Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRS25411STRPBF | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; LED driver Output current: -700...500mA Number of channels: 2 Mounting: SMD Case: SO8 Kind of package: reel; tape Supply voltage: 8...16.6V DC Operating temperature: -25...125°C Turn-off time: 180ns Turn-on time: 320ns Power: 625mW Voltage class: 600V Topology: buck |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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IRF2204PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 210A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 330W Technology: HEXFET® |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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IRFSL4010PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 375W Technology: HEXFET® |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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| PVA3354NSPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 150mA
Manufacturer series: PVA
On-state resistance: 24Ω
Mounting: SMT
Case: SMD8
Body dimensions: 9.39x6.47x3.93mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 150mA
Manufacturer series: PVA
On-state resistance: 24Ω
Mounting: SMT
Case: SMD8
Body dimensions: 9.39x6.47x3.93mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 534.85 грн |
| S80KS2564GACHV040 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
товару немає в наявності
Мінімальне замовлення: 260 шт
В кошику
од. на суму грн.
| S80KS2562GABHI020 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику
од. на суму грн.
| S80KS2562GABHB023 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S80KS2563GABHI020 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику
од. на суму грн.
| S80KS2564GACHI040 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
товару немає в наявності
Мінімальне замовлення: 260 шт
В кошику
од. на суму грн.
| S80KS2564GACHI043 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S80KS2564GACHV043 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| ITS4880R |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 8; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 8
Case: BSSOP36
Kind of output: N-Channel
On-state resistance: 0.15Ω
Output current: 0.625A
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 8; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 8
Case: BSSOP36
Kind of output: N-Channel
On-state resistance: 0.15Ω
Output current: 0.625A
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Kind of integrated circuit: high-side
товару немає в наявності
В кошику
од. на суму грн.
| BSC059N04LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BSC016N06NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BTS3405G |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 2; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Case: PG-DSO-8-25
On-state resistance: 0.35Ω
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 10V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 2; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Case: PG-DSO-8-25
On-state resistance: 0.35Ω
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 10V
на замовлення 2075 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 168.76 грн |
| 10+ | 100.32 грн |
| 25+ | 89.54 грн |
| 100+ | 81.25 грн |
| CY8C4013SXI-400 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: CY8C4013SXI-400
Category: Infineon Technologies microcontrollers
Description: CY8C4013SXI-400
на замовлення 2716 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 97+ | 105.36 грн |
| 388+ | 87.89 грн |
| BGS12SN6E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Mounting: SMD
Number of channels: 2
Supply voltage: 1.8...3.5V DC
Bandwidth: 0.1...6GHz
Case: TSNP6
Type of integrated circuit: RF switch
Output configuration: SPDT
Application: telecommunication
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Mounting: SMD
Number of channels: 2
Supply voltage: 1.8...3.5V DC
Bandwidth: 0.1...6GHz
Case: TSNP6
Type of integrated circuit: RF switch
Output configuration: SPDT
Application: telecommunication
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| IRFR4615TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| DD750S65K3NOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Module: diode
Type of semiconductor module: diode
Category: Diodes - others
Description: Module: diode
Type of semiconductor module: diode
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Мінімальне замовлення: 2 шт
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| BSO110N03MSGXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.1A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.1A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
на замовлення 2483 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.90 грн |
| 12+ | 34.66 грн |
| 100+ | 27.53 грн |
| 500+ | 23.30 грн |
| CY7C53150-20AXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Ethernet interfaces -integrated circuits
Description: CY7C53150-20AXI
Category: Ethernet interfaces -integrated circuits
Description: CY7C53150-20AXI
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 2004.56 грн |
| TZ240N36KOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 3.6kV; 240A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 3.6kV
Load current: 240A
Case: BG-PB501-1
Max. forward voltage: 3.43V
Max. forward impulse current: 6.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 3.6kV; 240A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 3.6kV
Load current: 240A
Case: BG-PB501-1
Max. forward voltage: 3.43V
Max. forward impulse current: 6.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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| AIMBG120R060M1XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.2kV; 38A; 202W; D2PAK-7
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 38A
Power dissipation: 202W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.2kV; 38A; 202W; D2PAK-7
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 38A
Power dissipation: 202W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Application: automotive industry
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 455.38 грн |
| BCR148SH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 100MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 100MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 2035 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 11.07 грн |
| 55+ | 7.54 грн |
| 100+ | 6.72 грн |
| 500+ | 5.97 грн |
| BSP317PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Kind of channel: enhancement
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.43A
Power dissipation: 1.8W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Kind of channel: enhancement
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.43A
Power dissipation: 1.8W
On-state resistance: 4Ω
Gate-source voltage: ±20V
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В кошику
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| IRF7351TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 1944 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 124.11 грн |
| 6+ | 77.27 грн |
| 10+ | 69.73 грн |
| 50+ | 55.97 грн |
| 100+ | 51.07 грн |
| 250+ | 45.27 грн |
| 500+ | 41.29 грн |
| 1000+ | 37.64 грн |
| TT142N14KOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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В кошику
од. на суму грн.
| BTS50080-1TMB |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 7mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 7mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
товару немає в наявності
В кошику
од. на суму грн.
| BSS315PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Technology: OptiMOS™ P2
Case: PG-SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.15Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Technology: OptiMOS™ P2
Case: PG-SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.15Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
на замовлення 3379 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.68 грн |
| 20+ | 21.23 грн |
| 23+ | 18.66 грн |
| 100+ | 10.94 грн |
| 250+ | 8.87 грн |
| 500+ | 7.63 грн |
| 1000+ | 6.72 грн |
| 3000+ | 5.56 грн |
| BSS126IXTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| IPB012N04NF2SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 197A; 250W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 159nC
On-state resistance: 1.25mΩ
Drain-source voltage: 40V
Drain current: 197A
Power dissipation: 250W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 197A; 250W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 159nC
On-state resistance: 1.25mΩ
Drain-source voltage: 40V
Drain current: 197A
Power dissipation: 250W
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| TLD21413EPXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
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В кошику
од. на суму грн.
| TLE42764GVATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
на замовлення 695 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 127.68 грн |
| 10+ | 87.89 грн |
| 25+ | 82.91 грн |
| TLE42764GV50ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
на замовлення 977 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 163.40 грн |
| 10+ | 112.76 грн |
| 25+ | 104.47 грн |
| 50+ | 99.49 грн |
| 100+ | 93.69 грн |
| TLE42744GSV33HTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 0.4A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.7...40V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 0.4A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.7...40V
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| TLE42744DV50ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...40V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...40V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE42764DVATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...40V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...40V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE42764DV50ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IMCQ120R034M2HXTMA1 |
на замовлення 2250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 750+ | 548.24 грн |
| IPB090N06N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
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| IPD200N15N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 150V
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 150V
Pulsed drain current: 200A
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| ESD230B1W0201E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 56W; 6.05V; 3A; bidirectional; SG-WLL-2-1
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 56W
Max. off-state voltage: 5.5V
Breakdown voltage: 6.05V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SG-WLL-2-1
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 56W; 6.05V; 3A; bidirectional; SG-WLL-2-1
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 56W
Max. off-state voltage: 5.5V
Breakdown voltage: 6.05V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SG-WLL-2-1
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
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Мінімальне замовлення: 15000 шт
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| PVT322S-TPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 750+ | 615.21 грн |
| ICE5AR4780BZSXKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| ICE5AR4770BZSXKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.2A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.2A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 700V
Duty cycle factor: 0...80%
Power: 26.5/14.5/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.2A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.2A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 700V
Duty cycle factor: 0...80%
Power: 26.5/14.5/16W
Application: SMPS
Operating voltage: 10...25.5V DC
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| IRFS4115TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
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| BCW60BE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 446.45 грн |
| BSP372NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 1067 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 68.75 грн |
| 11+ | 41.21 грн |
| 100+ | 27.86 грн |
| 200+ | 24.96 грн |
| 500+ | 21.64 грн |
| 1000+ | 19.73 грн |
| XMC4800F100F1024AAXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Kind of core: 32-bit
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Kind of core: 32-bit
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| S26KS256SDPBHB023 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S26KS256SDPBHI020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
товару немає в наявності
Мінімальне замовлення: 1690 шт
В кошику
од. на суму грн.
| S26KS256SDPBHM020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
товару немає в наявності
Мінімальне замовлення: 1690 шт
В кошику
од. на суму грн.
| S26KS256SDPBHV020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
товару немає в наявності
Мінімальне замовлення: 1690 шт
В кошику
од. на суму грн.
| IPB065N15N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Mounting: SMD
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Drain current: 130A
Drain-source voltage: 150V
Power dissipation: 300W
Case: PG-TO263-3
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Mounting: SMD
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Drain current: 130A
Drain-source voltage: 150V
Power dissipation: 300W
Case: PG-TO263-3
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| CY8C4248LTI-L485 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 48MHz; 256kBFLASH; Features: DMA,PoR,PWM
Type of integrated circuit: ARM microcontroller
Clock frequency: 48MHz
Memory: 256kB FLASH
Number of inputs/outputs: 57
Number of 16bit timers: 8
Mounting: SMD
Interface: I2C; IrDA; Microwire; Smart Card; SPI; SSP; UART; USART; USB
Integrated circuit features: DMA; PoR; PWM
Kind of architecture: Cortex M0
Family: ARM
Operating temperature: -40...85°C
Kind of core: 32-bit
Peripherial: DMA; POR
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 48MHz; 256kBFLASH; Features: DMA,PoR,PWM
Type of integrated circuit: ARM microcontroller
Clock frequency: 48MHz
Memory: 256kB FLASH
Number of inputs/outputs: 57
Number of 16bit timers: 8
Mounting: SMD
Interface: I2C; IrDA; Microwire; Smart Card; SPI; SSP; UART; USART; USB
Integrated circuit features: DMA; PoR; PWM
Kind of architecture: Cortex M0
Family: ARM
Operating temperature: -40...85°C
Kind of core: 32-bit
Peripherial: DMA; POR
на замовлення 260 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 260+ | 431.27 грн |
| ITS4200SMEOHUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.15Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 11...45V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.15Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 11...45V DC
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| ITS4200SMENHUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.16Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 5...34V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.16Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 5...34V DC
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| IPP50R190CEXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 127W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 127W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 244 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 177.69 грн |
| 10+ | 100.32 грн |
| 25+ | 88.72 грн |
| 50+ | 81.25 грн |
| 100+ | 74.62 грн |
| IRFB4620PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 288 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.90 грн |
| 10+ | 126.86 грн |
| IPW60R075CPFKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Case: PG-TO247-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 75mΩ
Gate-source voltage: ±20V
Drain current: 39A
Power dissipation: 313W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Case: PG-TO247-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 75mΩ
Gate-source voltage: ±20V
Drain current: 39A
Power dissipation: 313W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
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| IRS25411STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; LED driver
Output current: -700...500mA
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Supply voltage: 8...16.6V DC
Operating temperature: -25...125°C
Turn-off time: 180ns
Turn-on time: 320ns
Power: 625mW
Voltage class: 600V
Topology: buck
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; LED driver
Output current: -700...500mA
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Supply voltage: 8...16.6V DC
Operating temperature: -25...125°C
Turn-off time: 180ns
Turn-on time: 320ns
Power: 625mW
Voltage class: 600V
Topology: buck
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| IRF2204PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.22 грн |
| IRFSL4010PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 375W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 375W
Technology: HEXFET®
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 308.94 грн |




























