Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117840) > Сторінка 1954 з 1964

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IRF8736TRPBF IRF8736TRPBF INFINEON TECHNOLOGIES irf8736pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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ICE2QR2280ZXKLA1
+1
 		ICE2QR2280ZXKLA1 INFINEON TECHNOLOGIES ICE2QR2280Z.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 800V
Application: SMPS
Operating voltage: 10.5...25V DC
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BSD840NH6327XTSA1 BSD840NH6327XTSA1 INFINEON TECHNOLOGIES BSD840NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Mounting: SMD
Case: SOT363
Polarisation: unipolar
On-state resistance: 0.4Ω
Power dissipation: 0.5W
Drain current: 0.88A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 1586 шт:
термін постачання 14-30 дні (днів)
18+26.21 грн
26+16.28 грн
50+10.99 грн
100+9.32 грн
250+7.64 грн
500+6.55 грн
1000+5.79 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BTS716GBXUMA1 BTS716GBXUMA1 INFINEON TECHNOLOGIES BTS716GB.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Case: SO20
Turn-off time: 0.25ms
Turn-on time: 270µs
On-state resistance: 35mΩ
Output current: 2.6...5.3A
Power dissipation: 3.6W
Number of channels: 4
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Mounting: SMD
на замовлення 133 шт:
термін постачання 14-30 дні (днів)
2+309.11 грн
10+226.60 грн
25+217.37 грн
Мінімальне замовлення: 2
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IPB330P10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
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IPB19DP10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPB19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9416da34eb5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Case: D2PAK; TO263
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
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IPD11DP10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD11DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddc895e91a40 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 100V; -22A; 125W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: -22A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 111mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 59nC
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S25FL064LABBHV020 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
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S25FL128LAGBHV020 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S25FL128LAGBHV023 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S25FL256LAGBHV020 INFINEON TECHNOLOGIES S25FL.pdf Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S25FL256LAGBHV023 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S26KS128SDPBHV020 INFINEON TECHNOLOGIES infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
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S26KS256SDPBHV020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
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S26KS512SDPBHV020 INFINEON TECHNOLOGIES infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
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S27KL0642GABHV020 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S27KL0643DPBHV023 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S27KS0642GABHV020 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0642GABHV023 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0643GABHV020 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrat Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S29GL01GS11DHV020 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL01GS11DHV023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL01GT11DHV023 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
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S29GL064S80DHV020 INFINEON TECHNOLOGIES CYPR-S-A0005170109-1.pdf?t.download=true&u=5oefqw Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Access time: 80ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL064S80DHV023 INFINEON TECHNOLOGIES Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Access time: 80ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL256S10DHV020 INFINEON TECHNOLOGIES FASLS03740-1.pdf?t.download=true&u=5oefqw Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
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S29GL256S10DHV023 INFINEON TECHNOLOGIES download Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: reel; tape
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S29GL512T11DHV020 INFINEON TECHNOLOGIES S29GL-T.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL512T11DHV023 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S70GL02GS11FHV020 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S70GL02GS11FHV023 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S70KL1282DPBHV020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KL1282DPBHV023 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KL1282GABHV020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KL1283GABHV020 INFINEON TECHNOLOGIES Infineon-S70KL1283_S70KS1283_Octal_xSPI_Interface_HyperRam_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee91dc171f9 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KS1282GABHV020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S70KS1282GABHV023 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S80KS5122GABHV023 INFINEON TECHNOLOGIES S80KS5122.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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IKD04N60RC2ATMA1 INFINEON TECHNOLOGIES Infineon-IKD04N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522334a44d1d Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 8A; 36.6W; DPAK
Type of transistor: IGBT
Power dissipation: 36.6W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Collector-emitter voltage: 600V
Technology: Field Stop; Trench
Turn-off time: 90ns
Collector current: 8A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
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IRLL014NTRPBF IRLL014NTRPBF INFINEON TECHNOLOGIES irll014npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 4530 шт:
термін постачання 14-30 дні (днів)
11+41.58 грн
15+29.29 грн
25+24.51 грн
100+19.22 грн
250+17.29 грн
500+15.86 грн
1000+14.52 грн
2500+13.26 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IRFB4615PBF IRFB4615PBF INFINEON TECHNOLOGIES irfb4615pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 144W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
Gate charge: 26nC
On-state resistance: 39mΩ
Drain current: 35A
Gate-source voltage: ±20V
Drain-source voltage: 150V
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
7+70.50 грн
10+60.43 грн
50+56.23 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BSC093N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 87A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 139W
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 33nC
On-state resistance: 9.3mΩ
Drain current: 87A
Drain-source voltage: 150V
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XMC4700 RELAX KIT XMC4700 RELAX KIT INFINEON TECHNOLOGIES xmc4700_4800.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Type of development kit: ARM Infineon
Family: XMC4700
Kit contents: development board with XMCmicrocontroller
Components: XMC4700-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Connection: pin strips; RJ45; USB B micro x2
Application: building automation; CAV; motors; photovoltaics
Number of add-on connectors: 1
Kind of architecture: Cortex M4
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XMC4800 RELAX ETHERCAT KIT XMC4800 RELAX ETHERCAT KIT INFINEON TECHNOLOGIES xmc4700_4800.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Type of development kit: ARM Infineon
Family: XMC4800
Kit contents: development board with XMCmicrocontroller; expansion board
Components: XMC4800-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Connection: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Number of add-on connectors: 2
Kind of architecture: Cortex M4
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BSC009NE2LS5ATMA1 INFINEON TECHNOLOGIES BSC009NE2LS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC009NE2LS5IATMA1 BSC009NE2LS5IATMA1 INFINEON TECHNOLOGIES BSC009NE2LS5I-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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AUIPS7125RTRL INFINEON TECHNOLOGIES auips7125.pdf?fileId=5546d462533600a4015355a7d96a132a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.8A; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.8A
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 24mΩ
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Active logical level: high
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+420.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AUIPS7091GTR AUIPS7091GTR INFINEON TECHNOLOGIES auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
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AUIPS7111STRL INFINEON TECHNOLOGIES auips7111s.pdf?fileId=5546d462533600a4015355a7c94e1326 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; D2PAK-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK-5
On-state resistance: 7.5mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
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AUIPS71451GTR AUIPS71451GTR INFINEON TECHNOLOGIES auips71451g.pdf?fileId=5546d462533600a4015355a7f7461332 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
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BGS12P2L6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Case: TSLP-6-4
Bandwidth: 0.05...6GHz
Application: telecommunication
Output configuration: SPDT
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BGSA12GN10E6327XTSA1 INFINEON TECHNOLOGIES Infineon_AntennaTuningSolutions_2014-06.pdf?fileId=5546d461464245d301468a636c8c6598 Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSNP10
Mounting: SMD
Type of integrated circuit: RF switch
Case: TSNP10
Output configuration: SPDT
на замовлення 7500 шт:
термін постачання 14-30 дні (днів)
7500+28.74 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
IPT015N10N5ATMA1 IPT015N10N5ATMA1 INFINEON TECHNOLOGIES IPT015N10N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhancement
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IPT020N10N5ATMA1 INFINEON TECHNOLOGIES infineon-ipt020n10n5-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IRLR2705TRPBF IRLR2705TRPBF INFINEON TECHNOLOGIES irlr2705pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 6174 шт:
термін постачання 14-30 дні (днів)
7+70.50 грн
10+48.34 грн
50+33.40 грн
100+28.45 грн
500+20.65 грн
1000+18.46 грн
2000+16.87 грн
4000+15.61 грн
6000+15.27 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRLR2705TRLPBF INFINEON TECHNOLOGIES irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 110A
On-state resistance: 40mΩ
Gate-source voltage: ±16V
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IRLR6225TRPBF IRLR6225TRPBF INFINEON TECHNOLOGIES irlr6225pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 1771 шт:
термін постачання 14-30 дні (днів)
7+74.11 грн
10+46.08 грн
50+39.19 грн
100+36.34 грн
250+32.56 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRLR8743TRPBF IRLR8743TRPBF INFINEON TECHNOLOGIES irlr8743pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
2000+65.98 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IRLR9343TRPBF IRLR9343TRPBF INFINEON TECHNOLOGIES irlr9343pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLR3410TRRPBF IRLR3410TRRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRF8736TRPBF irf8736pbf.pdf
IRF8736TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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ICE2QR2280ZXKLA1 ICE2QR2280Z.pdf
ICE2QR2280ZXKLA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 800V
Application: SMPS
Operating voltage: 10.5...25V DC
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BSD840NH6327XTSA1 BSD840NH6327XTSA1.pdf
BSD840NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Mounting: SMD
Case: SOT363
Polarisation: unipolar
On-state resistance: 0.4Ω
Power dissipation: 0.5W
Drain current: 0.88A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 1586 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+26.21 грн
26+16.28 грн
50+10.99 грн
100+9.32 грн
250+7.64 грн
500+6.55 грн
1000+5.79 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BTS716GBXUMA1 BTS716GB.pdf
BTS716GBXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Case: SO20
Turn-off time: 0.25ms
Turn-on time: 270µs
On-state resistance: 35mΩ
Output current: 2.6...5.3A
Power dissipation: 3.6W
Number of channels: 4
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Mounting: SMD
на замовлення 133 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+309.11 грн
10+226.60 грн
25+217.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB330P10NMATMA1 Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
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IPB19DP10NMATMA1 Infineon-IPB19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9416da34eb5
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Case: D2PAK; TO263
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
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IPD11DP10NMATMA1 Infineon-IPD11DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddc895e91a40
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 100V; -22A; 125W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: -22A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 111mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 59nC
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S25FL064LABBHV020 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
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S25FL128LAGBHV020 S25FL.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S25FL128LAGBHV023 INFN-S-A0017271261-1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S25FL256LAGBHV020 S25FL.pdf Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S25FL256LAGBHV023 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S26KS128SDPBHV020 infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
товару немає в наявності
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S26KS256SDPBHV020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
товару немає в наявності
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S26KS512SDPBHV020 infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
товару немає в наявності
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S27KL0642GABHV020 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S27KL0643DPBHV023 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S27KS0642GABHV020 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S27KS0642GABHV023 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
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S27KS0643GABHV020 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrat
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S29GL01GS11DHV020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL01GS11DHV023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL01GT11DHV023 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
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S29GL064S80DHV020 CYPR-S-A0005170109-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Access time: 80ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL064S80DHV023 Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Access time: 80ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL256S10DHV020 FASLS03740-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
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S29GL256S10DHV023 download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: reel; tape
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S29GL512T11DHV020 S29GL-T.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
товару немає в наявності
В кошику  од. на суму  грн.
S29GL512T11DHV023
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S70GL02GS11FHV020 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S70GL02GS11FHV023 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S70KL1282DPBHV020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S70KL1282DPBHV023 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S70KL1282GABHV020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1283GABHV020 Infineon-S70KL1283_S70KS1283_Octal_xSPI_Interface_HyperRam_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee91dc171f9
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KS1282GABHV020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
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S70KS1282GABHV023 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S80KS5122GABHV023 S80KS5122.pdf
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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IKD04N60RC2ATMA1 Infineon-IKD04N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522334a44d1d
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 8A; 36.6W; DPAK
Type of transistor: IGBT
Power dissipation: 36.6W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Collector-emitter voltage: 600V
Technology: Field Stop; Trench
Turn-off time: 90ns
Collector current: 8A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
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IRLL014NTRPBF description irll014npbf.pdf
IRLL014NTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 4530 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+41.58 грн
15+29.29 грн
25+24.51 грн
100+19.22 грн
250+17.29 грн
500+15.86 грн
1000+14.52 грн
2500+13.26 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IRFB4615PBF irfb4615pbf.pdf
IRFB4615PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 144W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
Gate charge: 26nC
On-state resistance: 39mΩ
Drain current: 35A
Gate-source voltage: ±20V
Drain-source voltage: 150V
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+70.50 грн
10+60.43 грн
50+56.23 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BSC093N15NS5ATMA1 Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 87A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 139W
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 33nC
On-state resistance: 9.3mΩ
Drain current: 87A
Drain-source voltage: 150V
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XMC4700 RELAX KIT xmc4700_4800.pdf
XMC4700 RELAX KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Type of development kit: ARM Infineon
Family: XMC4700
Kit contents: development board with XMCmicrocontroller
Components: XMC4700-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Connection: pin strips; RJ45; USB B micro x2
Application: building automation; CAV; motors; photovoltaics
Number of add-on connectors: 1
Kind of architecture: Cortex M4
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XMC4800 RELAX ETHERCAT KIT xmc4700_4800.pdf
XMC4800 RELAX ETHERCAT KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Type of development kit: ARM Infineon
Family: XMC4800
Kit contents: development board with XMCmicrocontroller; expansion board
Components: XMC4800-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Connection: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Number of add-on connectors: 2
Kind of architecture: Cortex M4
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В кошику  од. на суму  грн.
BSC009NE2LS5ATMA1 BSC009NE2LS5-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BSC009NE2LS5IATMA1 BSC009NE2LS5I-DTE.pdf
BSC009NE2LS5IATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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AUIPS7125RTRL auips7125.pdf?fileId=5546d462533600a4015355a7d96a132a
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.8A; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.8A
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 24mΩ
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Active logical level: high
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+420.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AUIPS7091GTR auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322
AUIPS7091GTR
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
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AUIPS7111STRL auips7111s.pdf?fileId=5546d462533600a4015355a7c94e1326
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; D2PAK-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK-5
On-state resistance: 7.5mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
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AUIPS71451GTR auips71451g.pdf?fileId=5546d462533600a4015355a7f7461332
AUIPS71451GTR
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
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BGS12P2L6E6327XTSA1 Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Case: TSLP-6-4
Bandwidth: 0.05...6GHz
Application: telecommunication
Output configuration: SPDT
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BGSA12GN10E6327XTSA1 Infineon_AntennaTuningSolutions_2014-06.pdf?fileId=5546d461464245d301468a636c8c6598
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSNP10
Mounting: SMD
Type of integrated circuit: RF switch
Case: TSNP10
Output configuration: SPDT
на замовлення 7500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7500+28.74 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
IPT015N10N5ATMA1 IPT015N10N5-DTE.pdf
IPT015N10N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhancement
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IPT020N10N5ATMA1 infineon-ipt020n10n5-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IRLR2705TRPBF irlr2705pbf.pdf
IRLR2705TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 6174 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+70.50 грн
10+48.34 грн
50+33.40 грн
100+28.45 грн
500+20.65 грн
1000+18.46 грн
2000+16.87 грн
4000+15.61 грн
6000+15.27 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRLR2705TRLPBF irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 110A
On-state resistance: 40mΩ
Gate-source voltage: ±16V
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IRLR6225TRPBF irlr6225pbf.pdf
IRLR6225TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 1771 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+74.11 грн
10+46.08 грн
50+39.19 грн
100+36.34 грн
250+32.56 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRLR8743TRPBF irlr8743pbf.pdf
IRLR8743TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2000+65.98 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IRLR9343TRPBF irlr9343pbf.pdf
IRLR9343TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLR3410TRRPBF irlr3410pbf.pdf
IRLR3410TRRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
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