Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (151114) > Сторінка 2493 з 2519
Фото | Назва | Виробник | Інформація |
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IPZ40N04S5-8R4 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 40A On-state resistance: 9.9mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 34W Polarisation: unipolar Gate charge: 13.7nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPZ40N04S5L-2R8 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 71W Polarisation: unipolar Gate charge: 52nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±16V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPZ40N04S5L-4R8 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 40A On-state resistance: 6.7mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 48W Polarisation: unipolar Gate charge: 29nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±16V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPZ40N04S5L-7R4 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 40A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 34W Polarisation: unipolar Gate charge: 17nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±16V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BBY5303WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA Type of diode: varicap Max. off-state voltage: 6V Load current: 20mA Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape Leakage current: 0.2µA Capacitance: 1.85...5.8pF |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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ICL5101XUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; resonant LLC; PG-DSO-16-23; Ch: 1; dead time Type of integrated circuit: driver Topology: resonant LLC Kind of integrated circuit: LED driver; PFC controller; SMPS controller Case: PG-DSO-16-23 Number of channels: 1 Integrated circuit features: dead time Mounting: SMD Operating voltage: 8.6...17.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE6232GPAUMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX Type of integrated circuit: power switch Kind of integrated circuit: low-side Supply voltage: 4.5...5.5V DC Case: PG-DSO-36 Mounting: SMD Operating temperature: -40...150°C Kind of output: N-Channel Turn-off time: 10µs Output current: 0.55...1.1A Number of channels: 6 Turn-on time: 10µs Technology: FLEX |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE6251-2G | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; 80mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 5.5...18V DC Case: PG-DSO-14 Interface: CAN Mounting: SMD Operating temperature: -40...150°C Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape DC supply current: 80mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IR2132STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -420...200mA Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Number of channels: 6 Kind of package: reel; tape Voltage class: 600V Power: 1.6W Turn-on time: 675ns Turn-off time: 475ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPP024N06N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 250W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 3 |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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IPI024N06N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 250W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFR13N15DTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 14A; 86W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 14A Power dissipation: 86W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
S29AL016J55TFNR10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J55TFNR20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70BAI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70BAI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70BFA010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70BFA013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70BFA023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70BFI012 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70BFI013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70BFI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70BFN010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70BFN020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70FFI012 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70FFI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70FFI022 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70FFM020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70TFA020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70TFN010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70TFN013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70TFN020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL016J70TFN023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPB083N15N5LF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 66A Power dissipation: 179W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB054N06N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 115W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDM02G120C5XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 2A; 98W Max. off-state voltage: 1.2kV Max. forward voltage: 1.4V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 31A Leakage current: 1.2µA Power dissipation: 98W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Case: PG-TO252-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC014N06NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF6727MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 89W Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DD160N22K | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw Case: BG-PB34-1 Max. off-state voltage: 2.2kV Max. forward voltage: 1.4V Load current: 160A Semiconductor structure: double series Max. forward impulse current: 4.6kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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BAT5402VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.2A; 230mW Type of diode: Schottky rectifying Case: SC79 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 0.6A Power dissipation: 0.23W |
на замовлення 8880 шт: термін постачання 21-30 дні (днів) |
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BAS7002VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW Type of diode: Schottky switching Case: SC79 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Power dissipation: 0.25W Max. forward impulse current: 0.1A |
на замовлення 2356 шт: термін постачання 21-30 дні (днів) |
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IPW60R045CPFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Power dissipation: 431W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPZ60R040C7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Power dissipation: 227W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: CoolMOS™ C7 |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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AUIRFR8405TRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Power dissipation: 163W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.98mΩ Mounting: SMD Gate charge: 155nC Kind of channel: enhancement Pulsed drain current: 804A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S25FL128SAGMFIR11 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Case: SOIC16 Mounting: SMD Kind of package: tube Operating frequency: 133MHz Kind of interface: serial Memory: 128Mb FLASH Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S25FL256SAGMFIR11 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Case: SOIC16 Mounting: SMD Kind of package: tube Operating frequency: 133MHz Kind of interface: serial Memory: 256Mb FLASH Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S25FL512SAGMFIR11 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Case: SOIC16 Mounting: SMD Kind of package: tube Operating frequency: 133MHz Kind of interface: serial Memory: 512Mb FLASH Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRF200P223 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 71A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 102nC Technology: StrongIRFET™ |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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IRFR24N15DTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 24A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC030N08NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRFB8407 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Kind of package: tube Gate charge: 150nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRFSL8407 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Gate charge: 150nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO262 |
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В кошику од. на суму грн. | ||||||||||||||
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IRF7380TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRFB8405 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 163W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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AUIRFB8409 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 195A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
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В кошику од. на суму грн. | ||||||||||||||
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TD120N16SOFHPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V Case: BG-SB20-1 Max. off-state voltage: 1.6kV Max. load current: 190A Max. forward voltage: 1.75V Load current: 120A Semiconductor structure: double series Gate current: 100mA Max. forward impulse current: 2.25kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode-thyristor |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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BFP650FH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4 Mounting: SMD Case: TSFP-4 Kind of package: reel; tape Kind of transistor: RF Frequency: 42GHz Collector-emitter voltage: 13V Collector current: 0.15A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Technology: SiGe:C |
на замовлення 1473 шт: термін постачання 21-30 дні (днів) |
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IPB016N06L3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SPP18P06PHXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.7A Power dissipation: 81.1W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: SIPMOS™ |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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IR38263MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Operating temperature: -40...125°C Case: PQFN5X7 DC supply current: 50mA Supply voltage: 4.5...5.5V Frequency: 0.15...1.5MHz Output voltage: 0.5...14V DC Output current: 30A Type of integrated circuit: PMIC Interface: PMBus; PVID Number of channels: 1 Input voltage: 5.3...16V DC Kind of package: reel; tape Kind of integrated circuit: POL converter Topology: buck Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
IPZ40N04S5-8R4 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.9mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 34W
Polarisation: unipolar
Gate charge: 13.7nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.9mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 34W
Polarisation: unipolar
Gate charge: 13.7nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
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IPZ40N04S5L-2R8 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 71W
Polarisation: unipolar
Gate charge: 52nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 71W
Polarisation: unipolar
Gate charge: 52nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
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IPZ40N04S5L-4R8 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 48W
Polarisation: unipolar
Gate charge: 29nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 48W
Polarisation: unipolar
Gate charge: 29nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
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IPZ40N04S5L-7R4 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 34W
Polarisation: unipolar
Gate charge: 17nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 34W
Polarisation: unipolar
Gate charge: 17nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
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BBY5303WE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Max. off-state voltage: 6V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 1.85...5.8pF
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Max. off-state voltage: 6V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 1.85...5.8pF
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.94 грн |
20+ | 20.17 грн |
100+ | 9.38 грн |
273+ | 8.82 грн |
ICL5101XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
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В кошику
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TLE6232GPAUMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Turn-off time: 10µs
Output current: 0.55...1.1A
Number of channels: 6
Turn-on time: 10µs
Technology: FLEX
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Turn-off time: 10µs
Output current: 0.55...1.1A
Number of channels: 6
Turn-on time: 10µs
Technology: FLEX
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TLE6251-2G |
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Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; 80mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; 80mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
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од. на суму грн.
IR2132STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: reel; tape
Voltage class: 600V
Power: 1.6W
Turn-on time: 675ns
Turn-off time: 475ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: reel; tape
Voltage class: 600V
Power: 1.6W
Turn-on time: 675ns
Turn-off time: 475ns
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IPP024N06N3GXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 399.67 грн |
3+ | 319.11 грн |
5+ | 222.20 грн |
12+ | 209.59 грн |
IPI024N06N3GXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IRFR13N15DTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 14A; 86W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 14A
Power dissipation: 86W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 14A; 86W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 14A
Power dissipation: 86W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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S29AL016J55TFNR10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J55TFNR20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70BAI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J70BAI023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70BFA010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S29AL016J70BFA013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S29AL016J70BFA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S29AL016J70BFI012 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70BFI013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70BFI023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70BFN010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70BFN020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70FFI012 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70FFI020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J70FFI022 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70FFM020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S29AL016J70TFA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S29AL016J70TFN010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70TFN013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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S29AL016J70TFN020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70TFN023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IPB083N15N5LF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 66A
Power dissipation: 179W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 66A
Power dissipation: 179W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB054N06N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IDM02G120C5XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 2A; 98W
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 31A
Leakage current: 1.2µA
Power dissipation: 98W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO252-2
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 2A; 98W
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 31A
Leakage current: 1.2µA
Power dissipation: 98W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO252-2
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BSC014N06NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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IRF6727MTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
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DD160N22K |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Case: BG-PB34-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.4V
Load current: 160A
Semiconductor structure: double series
Max. forward impulse current: 4.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Case: BG-PB34-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.4V
Load current: 160A
Semiconductor structure: double series
Max. forward impulse current: 4.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 12420.18 грн |
BAT5402VH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 8880 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.03 грн |
50+ | 8.04 грн |
61+ | 6.51 грн |
100+ | 5.89 грн |
285+ | 3.25 грн |
783+ | 3.07 грн |
3000+ | 2.95 грн |
BAS7002VH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
на замовлення 2356 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.52 грн |
36+ | 11.19 грн |
50+ | 8.51 грн |
100+ | 7.64 грн |
188+ | 4.96 грн |
516+ | 4.65 грн |
IPW60R045CPFKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPZ60R040C7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 984.31 грн |
AUIRFR8405TRL |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
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S25FL128SAGMFIR11 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
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S25FL256SAGMFIR11 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
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S25FL512SAGMFIR11 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
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IRF200P223 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 102nC
Technology: StrongIRFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 102nC
Technology: StrongIRFET™
на замовлення 19 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 425.12 грн |
4+ | 296.26 грн |
9+ | 279.72 грн |
IRFR24N15DTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BSC030N08NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
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AUIRFB8407 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
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AUIRFSL8407 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO262
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO262
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IRF7380TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRFB8405 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 13 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 361.48 грн |
3+ | 296.26 грн |
4+ | 267.90 грн |
10+ | 252.93 грн |
AUIRFB8409 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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TD120N16SOFHPSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.75V
Load current: 120A
Semiconductor structure: double series
Gate current: 100mA
Max. forward impulse current: 2.25kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.75V
Load current: 120A
Semiconductor structure: double series
Gate current: 100mA
Max. forward impulse current: 2.25kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
на замовлення 12 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 2053.48 грн |
2+ | 1802.80 грн |
10+ | 1753.95 грн |
BFP650FH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Kind of package: reel; tape
Kind of transistor: RF
Frequency: 42GHz
Collector-emitter voltage: 13V
Collector current: 0.15A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Technology: SiGe:C
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Kind of package: reel; tape
Kind of transistor: RF
Frequency: 42GHz
Collector-emitter voltage: 13V
Collector current: 0.15A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Technology: SiGe:C
на замовлення 1473 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.37 грн |
22+ | 18.12 грн |
25+ | 17.26 грн |
100+ | 16.47 грн |
IPB016N06L3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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SPP18P06PHXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SIPMOS™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 37 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 87.46 грн |
10+ | 78.79 грн |
14+ | 66.97 грн |
IR38263MTRPBFAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.