Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5688) > Сторінка 95 з 95
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MBR2X060A120 | GeneSiC Semiconductor |
Schottky Rectifier Module Type 120 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MBR2X060A150 | GeneSiC Semiconductor |
Schottky Rectifier Vrrm 150 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MBR2X060A080 | GeneSiC Semiconductor |
Schottky Rectifier Module Type 120 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MBRH20060R | GeneSiC Semiconductor |
Rectifier Diode Schottky 60V 200A 2-Pin Case D-67 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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FR70BR02 | GeneSiC Semiconductor |
Rectifier Diode Switching 100V 70A 200ns 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| S70YR | GeneSiC Semiconductor |
Diode Switching 1.6KV 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| S70D | GeneSiC Semiconductor |
Rectifier Diode Switching 200V 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| S70M | GeneSiC Semiconductor |
Rectifier Diode Switching 1KV 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| FR70J05 | GeneSiC Semiconductor |
Diode Switching 600V 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| S70JR | GeneSiC Semiconductor |
Rectifier Diode Switching 600V 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| S70DR | GeneSiC Semiconductor |
Rectifier Diode Switching 200V 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| S70V | GeneSiC Semiconductor |
Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| S70BR | GeneSiC Semiconductor |
Rectifier Diode Switching 100V 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| S70B | GeneSiC Semiconductor |
Rectifier Diode Switching 100V 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MBR6040R | GeneSiC Semiconductor |
Rectifier Diode Schottky 40V 60A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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G3R20MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 219nC On-state resistance: 20mΩ Drain current: 90A Pulsed drain current: 240A Power dissipation: 542W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 |
на замовлення 569 шт: термін постачання 21-30 дні (днів) |
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G3R30MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 155nC On-state resistance: 30mΩ Drain current: 63A Pulsed drain current: 200A Power dissipation: 400W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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G3R40MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 106nC On-state resistance: 40mΩ Drain current: 50A Pulsed drain current: 140A Power dissipation: 333W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 |
на замовлення 279 шт: термін постачання 21-30 дні (днів) |
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G3R75MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 54nC On-state resistance: 75mΩ Drain current: 29A Pulsed drain current: 80A Power dissipation: 207W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 |
на замовлення 461 шт: термін постачання 21-30 дні (днів) |
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G2R1000MT17J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7 Mounting: SMD Power dissipation: 54W Drain-source voltage: 1.7kV Kind of channel: enhancement Technology: G2R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Case: TO263-7 Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...20V On-state resistance: 1Ω Drain current: 4A Pulsed drain current: 8A |
на замовлення 188 шт: термін постачання 21-30 дні (днів) |
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G3R20MT12N | GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFETDescription: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 74A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 20mΩ Pulsed drain current: 240A Power dissipation: 365W Technology: G3R™; SiC Gate-source voltage: -5...15V Mechanical mounting: screw Kind of channel: enhancement |
на замовлення 110 шт: термін постачання 21-30 дні (днів) |
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G3R20MT17N | GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFETDescription: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.7kV Drain current: 70A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 20mΩ Pulsed drain current: 300A Power dissipation: 523W Technology: G3R™; SiC Gate-source voltage: -5...15V Mechanical mounting: screw Kind of channel: enhancement |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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G3R75MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Drain-source voltage: 1.2kV Drain current: 29A Case: TO247-3 On-state resistance: 75mΩ Pulsed drain current: 80A Power dissipation: 207W Technology: G3R™; SiC Gate-source voltage: -5...15V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 54nC |
на замовлення 91 шт: термін постачання 21-30 дні (днів) |
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GC02MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.5V Max. forward impulse current: 16A Kind of package: tube Features of semiconductor devices: MPS |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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G3R350MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W Drain-source voltage: 1.2kV Drain current: 8A Case: TO247-3 On-state resistance: 0.35Ω Pulsed drain current: 16A Power dissipation: 74W Technology: G3R™; SiC Gate-source voltage: -5...15V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 12nC |
на замовлення 374 шт: термін постачання 21-30 дні (днів) |
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GD20MPS12H | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 27A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.9V Max. forward impulse current: 128A Kind of package: tube Max. load current: 67A Features of semiconductor devices: MPS |
на замовлення 531 шт: термін постачання 21-30 дні (днів) |
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| GD10MPS12H | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube Max. off-state voltage: 1.2kV Max. load current: 33A Load current: 16A Case: TO247-2 Mounting: THT Kind of package: tube Max. forward impulse current: 64A Features of semiconductor devices: MPS Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Max. forward voltage: 1.9V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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GD2X100MPS06N | GeneSiC SEMICONDUCTOR |
Category: Diode modulesDescription: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Features of semiconductor devices: MPS Kind of package: tube Case: SOT227B Mechanical mounting: screw Electrical mounting: screw Technology: SiC Reverse recovery time: 10ns Max. forward voltage: 1.8V Load current: 108A x2 Max. load current: 231A Max. forward impulse current: 0.44kA Max. off-state voltage: 650V |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
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GD2X30MPS06N | GeneSiC SEMICONDUCTOR |
Category: Diode modulesDescription: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Features of semiconductor devices: MPS Kind of package: tube Case: SOT227B Mechanical mounting: screw Electrical mounting: screw Technology: SiC Reverse recovery time: 10ns Max. forward voltage: 1.5V Load current: 30A x2 Max. load current: 60A Max. forward impulse current: 0.168kA Max. off-state voltage: 650V |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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GD20MPS12A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 29A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.9V Max. forward impulse current: 128A Kind of package: tube Max. load current: 67A Features of semiconductor devices: MPS |
на замовлення 1107 шт: термін постачання 21-30 дні (днів) |
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G3R450MT17D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W Kind of package: tube Kind of channel: enhancement Technology: G3R™; SiC Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 18nC On-state resistance: 0.45Ω Drain current: 6A Pulsed drain current: 16A Power dissipation: 88W Drain-source voltage: 1.7kV Case: TO247-3 |
на замовлення 407 шт: термін постачання 21-30 дні (днів) |
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G3R450MT17J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W Kind of package: tube Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 18nC On-state resistance: 0.45Ω Drain current: 6A Pulsed drain current: 16A Power dissipation: 91W Drain-source voltage: 1.7kV Case: TO263-7 |
на замовлення 841 шт: термін постачання 21-30 дні (днів) |
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G3R40MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Drain-source voltage: 1.2kV Drain current: 50A Case: TO247-3 On-state resistance: 40mΩ Pulsed drain current: 140A Power dissipation: 333W Technology: G3R™; SiC Gate-source voltage: -5...15V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 106nC |
на замовлення 671 шт: термін постачання 21-30 дні (днів) |
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G3R160MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W Drain-source voltage: 1.2kV Drain current: 16A Case: TO247-3 On-state resistance: 0.16Ω Pulsed drain current: 40A Power dissipation: 123W Technology: G3R™; SiC Gate-source voltage: -5...15V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 28nC |
на замовлення 845 шт: термін постачання 21-30 дні (днів) |
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GD30MPS06H | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 30A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.5V Max. forward impulse current: 0.168kA Kind of package: tube Features of semiconductor devices: MPS |
на замовлення 91 шт: термін постачання 21-30 дні (днів) |
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GD10MPS17H | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.7kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2.1V Max. forward impulse current: 80A Kind of package: tube Max. load current: 42A Features of semiconductor devices: MPS |
на замовлення 255 шт: термін постачання 21-30 дні (днів) |
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GD15MPS17H | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.7kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.7kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2.1V Max. forward impulse current: 120A Kind of package: tube Max. load current: 63A Features of semiconductor devices: MPS |
на замовлення 458 шт: термін постачання 21-30 дні (днів) |
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GD05MPS17H | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.7kV; 5A; TO247-2; tube Semiconductor structure: single diode Max. off-state voltage: 1.7kV Load current: 5A Case: TO247-2 Max. forward voltage: 2.1V Max. forward impulse current: 40A Max. load current: 21A Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Type of diode: Schottky rectifying Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| GD05MPS17J | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-7; SiC; SMD; 1.7kV; 5A; tube Semiconductor structure: single diode Max. off-state voltage: 1.7kV Load current: 5A Case: TO263-7 Max. forward voltage: 2.1V Max. forward impulse current: 40A Max. load current: 21A Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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GB10MPS17-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube Semiconductor structure: single diode Max. off-state voltage: 1.7kV Load current: 10A Case: TO247-2 Max. forward voltage: 1.5V Max. forward impulse current: 87A Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Type of diode: Schottky rectifying Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GB2X50MPS17-227 | GeneSiC SEMICONDUCTOR |
Category: Diode modulesDescription: Module: diode; double independent; 1.7kV; If: 50Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.7kV Load current: 50A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 0.432kA Electrical mounting: screw Max. load current: 100A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GD2X75MPS17N | GeneSiC SEMICONDUCTOR |
Category: Diode modulesDescription: Module: diode; double independent; 1.7kV; If: 75Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.7kV Load current: 75A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 0.6kA Electrical mounting: screw Max. load current: 150A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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G3R45MT17K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 43A Power dissipation: 438W Case: TO247-4 Gate-source voltage: -5...15V On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 160A Gate charge: 182nC Features of semiconductor devices: Kelvin terminal |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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G3R30MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W Mounting: SMD On-state resistance: 30mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: G3R™; SiC Kind of channel: enhancement Drain current: 68A Pulsed drain current: 200A Power dissipation: 459W Drain-source voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate-source voltage: -5...15V Gate charge: 155nC Kind of package: tube Case: TO263-7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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G3R160MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W Mounting: SMD On-state resistance: 0.16Ω Type of transistor: N-MOSFET Polarisation: unipolar Technology: G3R™; SiC Kind of channel: enhancement Drain current: 16A Pulsed drain current: 40A Power dissipation: 128W Drain-source voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate-source voltage: -5...15V Gate charge: 28nC Kind of package: tube Case: TO263-7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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G3R40MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W Mounting: SMD On-state resistance: 40mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: G3R™; SiC Kind of channel: enhancement Drain current: 53A Pulsed drain current: 140A Power dissipation: 374W Drain-source voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate-source voltage: -5...15V Gate charge: 106nC Kind of package: tube Case: TO263-7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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G3R75MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W Mounting: SMD On-state resistance: 75mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: G3R™; SiC Kind of channel: enhancement Drain current: 30A Pulsed drain current: 80A Power dissipation: 224W Drain-source voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate-source voltage: -5...15V Gate charge: 54nC Kind of package: tube Case: TO263-7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GC2X15MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Mounting: THT Semiconductor structure: common cathode; double Features of semiconductor devices: MPS Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Kind of package: tube Max. forward voltage: 1.5V Load current: 15A x2 Max. load current: 30A Max. forward impulse current: 120A Max. off-state voltage: 1.2kV |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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| MBR2X060A120 |
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Виробник: GeneSiC Semiconductor
Schottky Rectifier Module Type 120 A
Schottky Rectifier Module Type 120 A
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X060A150 |
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Виробник: GeneSiC Semiconductor
Schottky Rectifier Vrrm 150 V
Schottky Rectifier Vrrm 150 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X060A080 |
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Виробник: GeneSiC Semiconductor
Schottky Rectifier Module Type 120 A
Schottky Rectifier Module Type 120 A
товару немає в наявності
В кошику
од. на суму грн.
| MBRH20060R |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Schottky 60V 200A 2-Pin Case D-67
Rectifier Diode Schottky 60V 200A 2-Pin Case D-67
товару немає в наявності
В кошику
од. на суму грн.
| FR70BR02 |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 200ns 2-Pin DO-5
Rectifier Diode Switching 100V 70A 200ns 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70YR |
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Виробник: GeneSiC Semiconductor
Diode Switching 1.6KV 70A 2-Pin DO-5
Diode Switching 1.6KV 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70D |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 200V 70A 2-Pin DO-5
Rectifier Diode Switching 200V 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70M |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 1KV 70A 2-Pin DO-5
Rectifier Diode Switching 1KV 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| FR70J05 |
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Виробник: GeneSiC Semiconductor
Diode Switching 600V 70A 2-Pin DO-5
Diode Switching 600V 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70JR |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 600V 70A 2-Pin DO-5
Rectifier Diode Switching 600V 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70DR |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 200V 70A 2-Pin DO-5
Rectifier Diode Switching 200V 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70V |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5
Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70BR |
![]() |
Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 2-Pin DO-5
Rectifier Diode Switching 100V 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70B |
![]() |
Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 2-Pin DO-5
Rectifier Diode Switching 100V 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| MBR6040R |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Schottky 40V 60A 2-Pin DO-5
Rectifier Diode Schottky 40V 60A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| G3R20MT12K |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 219nC
On-state resistance: 20mΩ
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 542W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 219nC
On-state resistance: 20mΩ
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 542W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
на замовлення 569 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2337.04 грн |
| 3+ | 2085.79 грн |
| 10+ | 2073.06 грн |
| G3R30MT12K |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 155nC
On-state resistance: 30mΩ
Drain current: 63A
Pulsed drain current: 200A
Power dissipation: 400W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 155nC
On-state resistance: 30mΩ
Drain current: 63A
Pulsed drain current: 200A
Power dissipation: 400W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
товару немає в наявності
В кошику
од. на суму грн.
| G3R40MT12K |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 106nC
On-state resistance: 40mΩ
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 106nC
On-state resistance: 40mΩ
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
на замовлення 279 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1123.97 грн |
| G3R75MT12K |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 54nC
On-state resistance: 75mΩ
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 54nC
On-state resistance: 75mΩ
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
на замовлення 461 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 606.53 грн |
| G2R1000MT17J |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Power dissipation: 54W
Drain-source voltage: 1.7kV
Kind of channel: enhancement
Technology: G2R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Case: TO263-7
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Power dissipation: 54W
Drain-source voltage: 1.7kV
Kind of channel: enhancement
Technology: G2R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Case: TO263-7
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
на замовлення 188 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 409.50 грн |
| 3+ | 339.68 грн |
| G3R20MT12N |
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Виробник: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
на замовлення 110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3652.91 грн |
| G3R20MT17N |
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Виробник: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8302.14 грн |
| G3R75MT12D |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
Case: TO247-3
On-state resistance: 75mΩ
Pulsed drain current: 80A
Power dissipation: 207W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
Case: TO247-3
On-state resistance: 75mΩ
Pulsed drain current: 80A
Power dissipation: 207W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 54nC
на замовлення 91 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 711.91 грн |
| 4+ | 645.15 грн |
| 10+ | 620.49 грн |
| GC02MPS12-220 |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: tube
Features of semiconductor devices: MPS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: tube
Features of semiconductor devices: MPS
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 86.71 грн |
| G3R350MT12D |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Drain-source voltage: 1.2kV
Drain current: 8A
Case: TO247-3
On-state resistance: 0.35Ω
Pulsed drain current: 16A
Power dissipation: 74W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 12nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Drain-source voltage: 1.2kV
Drain current: 8A
Case: TO247-3
On-state resistance: 0.35Ω
Pulsed drain current: 16A
Power dissipation: 74W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 12nC
на замовлення 374 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 278.42 грн |
| GD20MPS12H |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 27A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 27A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
на замовлення 531 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 490.02 грн |
| 3+ | 420.02 грн |
| 7+ | 396.95 грн |
| 30+ | 392.18 грн |
| 120+ | 381.84 грн |
| GD10MPS12H |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.9V
товару немає в наявності
В кошику
од. на суму грн.
| GD2X100MPS06N |
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Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.8V
Load current: 108A x2
Max. load current: 231A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 650V
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.8V
Load current: 108A x2
Max. load current: 231A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 650V
на замовлення 83 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3411.32 грн |
| GD2X30MPS06N |
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Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.5V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 650V
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.5V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 650V
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1520.62 грн |
| GD20MPS12A |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
на замовлення 1107 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 416.35 грн |
| 4+ | 304.67 грн |
| 9+ | 287.97 грн |
| G3R450MT17D |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Drain-source voltage: 1.7kV
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Drain-source voltage: 1.7kV
Case: TO247-3
на замовлення 407 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 490.02 грн |
| 3+ | 357.18 грн |
| 8+ | 338.09 грн |
| G3R450MT17J |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 91W
Drain-source voltage: 1.7kV
Case: TO263-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 91W
Drain-source voltage: 1.7kV
Case: TO263-7
на замовлення 841 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 462.61 грн |
| G3R40MT12D |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
Case: TO247-3
On-state resistance: 40mΩ
Pulsed drain current: 140A
Power dissipation: 333W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 106nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
Case: TO247-3
On-state resistance: 40mΩ
Pulsed drain current: 140A
Power dissipation: 333W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 106nC
на замовлення 671 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1111.12 грн |
| 3+ | 975.28 грн |
| 30+ | 937.89 грн |
| G3R160MT12D |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Drain-source voltage: 1.2kV
Drain current: 16A
Case: TO247-3
On-state resistance: 0.16Ω
Pulsed drain current: 40A
Power dissipation: 123W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 28nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Drain-source voltage: 1.2kV
Drain current: 16A
Case: TO247-3
On-state resistance: 0.16Ω
Pulsed drain current: 40A
Power dissipation: 123W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 28nC
на замовлення 845 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 442.91 грн |
| 3+ | 380.25 грн |
| 7+ | 370.70 грн |
| 30+ | 357.18 грн |
| GD30MPS06H |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Kind of package: tube
Features of semiconductor devices: MPS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Kind of package: tube
Features of semiconductor devices: MPS
на замовлення 91 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 479.74 грн |
| 3+ | 376.27 грн |
| 7+ | 355.59 грн |
| GD10MPS17H |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 42A
Features of semiconductor devices: MPS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 42A
Features of semiconductor devices: MPS
на замовлення 255 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 561.13 грн |
| 3+ | 458.20 грн |
| 6+ | 433.54 грн |
| 120+ | 418.43 грн |
| GD15MPS17H |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 120A
Kind of package: tube
Max. load current: 63A
Features of semiconductor devices: MPS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 120A
Kind of package: tube
Max. load current: 63A
Features of semiconductor devices: MPS
на замовлення 458 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 699.91 грн |
| GD05MPS17H |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 5A; TO247-2; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 5A
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 40A
Max. load current: 21A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 5A; TO247-2; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 5A
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 40A
Max. load current: 21A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: THT
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| GD05MPS17J |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 1.7kV; 5A; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 5A
Case: TO263-7
Max. forward voltage: 2.1V
Max. forward impulse current: 40A
Max. load current: 21A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 1.7kV; 5A; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 5A
Case: TO263-7
Max. forward voltage: 2.1V
Max. forward impulse current: 40A
Max. load current: 21A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: SMD
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| GB10MPS17-247 |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 10A
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 87A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 10A
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 87A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: THT
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| GB2X50MPS17-227 |
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Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; If: 50Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.7kV
Load current: 50A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.432kA
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; If: 50Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.7kV
Load current: 50A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.432kA
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
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| GD2X75MPS17N |
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Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; If: 75Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.7kV
Load current: 75A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; If: 75Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.7kV
Load current: 75A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
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| G3R45MT17K |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Power dissipation: 438W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 182nC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Power dissipation: 438W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 182nC
Features of semiconductor devices: Kelvin terminal
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2268.50 грн |
| 2+ | 2084.99 грн |
| 30+ | 2004.65 грн |
| G3R30MT12J |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Mounting: SMD
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 155nC
Kind of package: tube
Case: TO263-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Mounting: SMD
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 155nC
Kind of package: tube
Case: TO263-7
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| G3R160MT12J |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Mounting: SMD
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 28nC
Kind of package: tube
Case: TO263-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Mounting: SMD
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 28nC
Kind of package: tube
Case: TO263-7
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| G3R40MT12J |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Mounting: SMD
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 106nC
Kind of package: tube
Case: TO263-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Mounting: SMD
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 106nC
Kind of package: tube
Case: TO263-7
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| G3R75MT12J |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Mounting: SMD
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 54nC
Kind of package: tube
Case: TO263-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Mounting: SMD
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 54nC
Kind of package: tube
Case: TO263-7
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| GC2X15MPS12-247 |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Mounting: THT
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Mounting: THT
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 644.23 грн |































