Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149614) > Сторінка 2466 з 2494
| Фото | Назва | Виробник | Інформація |
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| IKW40N120CS7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 56A Power dissipation: 179W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 230nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 45ns Turn-off time: 0.5µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IRS2184STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Operating temperature: -40...125°C Case: SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Mounting: SMD Output current: -2.3...1.9A Turn-off time: 290ns Turn-on time: 720ns Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Voltage class: 600V Kind of package: reel; tape |
на замовлення 2442 шт: термін постачання 21-30 дні (днів) |
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IRS2453DSTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: ballast controller; gate driver; high-/low-side Case: SO14 Output current: -260...180mA Power: 1W Number of channels: 4 Supply voltage: 10...16.6V DC Mounting: SMD Operating temperature: -25...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns |
на замовлення 2454 шт: термін постачання 21-30 дні (днів) |
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IR21094STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -250...120mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-off time: 200ns Turn-on time: 750ns Power: 1W |
на замовлення 1579 шт: термін постачання 21-30 дні (днів) |
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| BAR6502VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SC79 Mounting: SMD Type of diode: varicap Capacitance: 0.5pF Leakage current: 20nA Load current: 0.1A Max. forward voltage: 1V Max. off-state voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FM24CL64B-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 64kb FRAM Interface: I2C Memory organisation: 8kx8bit Supply voltage: 2.7...3.6V DC Clock frequency: 1MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FM24C64B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 64kb FRAM Interface: I2C Memory organisation: 8kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29AL008J55TFIR23 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL256S10DHA020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL256S10DHB020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL256S10DHB023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL256S10DHI010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL256S10DHI020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL256S10DHI023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL256S10DHIV10 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL256S10DHIV20 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL256S10DHIV23 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL256S10DHV010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL256S10DHV020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL256S10DHV023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL256S10FHI010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL01GT11DHIV20 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Output voltage: 1.65...3.6V DC Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL01GT11DHIV23 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Output voltage: 1.65...3.6V DC Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL01GT11DHV023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Operating temperature: -40...105°C Access time: 110ns Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL01GT11FHIV10 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Output voltage: 1.65...3.6V DC Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL01GT11FHIV20 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Output voltage: 1.65...3.6V DC Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL01GT11FHIV23 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Output voltage: 1.65...3.6V DC Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL01GT11TFB020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel Case: TSOP56 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...105°C Access time: 110ns Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Application: automotive Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL01GT11TFIV10 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel Case: TSOP56 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29GL01GT11TFIV20 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel Case: TSOP56 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S70GL02GT11FHB013 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Operating temperature: -40...105°C Access time: 110ns Operating voltage: 2.7...3.6V Memory: 2Gb FLASH Application: automotive Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S70GL02GT11FHI010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Operating voltage: 2.7...3.6V Memory: 2Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FM25L16B-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Memory: 16kb FRAM Memory organisation: 2kx8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FM25L16B-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Memory: 16kb FRAM Memory organisation: 2kx8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of package: reel; tape Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CY7C1312KV18-250BZXCT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C Type of integrated circuit: SRAM memory Mounting: SMD Case: FBGA165 Operating temperature: 0...70°C Kind of package: reel; tape Frequency: 250MHz Kind of interface: parallel Kind of memory: SRAM Supply voltage: 1.7...1.9V DC Memory: 18Mb SRAM Memory organisation: 1Mx18bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FM25CL64B-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.65V DC Memory: 64kb FRAM Memory organisation: 8kx8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of package: reel; tape Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FM25L04B-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Memory: 4kb FRAM Memory organisation: 512x8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of package: reel; tape Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FM25V05-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 512kb FRAM Memory organisation: 64kx8bit Clock frequency: 40MHz Case: SOIC8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of package: reel; tape Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FM25V10-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 1Mb FRAM Memory organisation: 128kx8bit Clock frequency: 40MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S25FL128LAGNFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 2.7...3.6V Memory: 128Mb FLASH Operating frequency: 133MHz Application: automotive Case: WSON8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
TLV4906KFTSA1 | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall; unipolar; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC Type of sensor: Hall Kind of sensor: unipolar Case: SC59 Range of detectable magnetic field: 4.7...13.9mT Supply voltage: 2.7...18V DC Operating temperature: -40...85°C Output configuration: analogue voltage Operation mode: unipolar |
на замовлення 717 шт: термін постачання 21-30 дні (днів) |
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BFQ19SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89 Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Case: SOT89 Collector current: 0.12A Power dissipation: 1W Collector-emitter voltage: 20V Frequency: 5.5GHz Polarisation: bipolar Kind of transistor: RF |
на замовлення 633 шт: термін постачання 21-30 дні (днів) |
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IPP17N25S3100AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ T Case: PG-TO220-3 Polarisation: unipolar Gate-source voltage: ±20V On-state resistance: 0.1Ω Power dissipation: 107W Drain current: 13.3A Drain-source voltage: 250V Pulsed drain current: 68A |
на замовлення 482 шт: термін постачання 21-30 дні (днів) |
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| TLE4946KHTSA1 | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT Mounting: SMT Kind of sensor: latch Operating temperature: -40...150°C Supply voltage: 2.7...18V DC Range of detectable magnetic field: -19...19mT Case: SC59 Type of sensor: Hall |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
IPU95R750P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD Mounting: THT Case: IPAK Technology: CoolMOS™ P7 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 23nC On-state resistance: 0.75Ω Drain current: 5.5A Gate-source voltage: ±20V Power dissipation: 73W Drain-source voltage: 950V |
на замовлення 147 шт: термін постачання 21-30 дні (днів) |
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TT210N12KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of semiconductor module: thyristor Gate current: 150mA Max. forward voltage: 1.65V Load current: 210A Max. off-state voltage: 1.2kV Max. forward impulse current: 6.6kA Case: BG-PB50-1 |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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|
IRF6218STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK Mounting: SMD Case: D2PAK Drain-source voltage: -150V Drain current: -27A Power dissipation: 250W Kind of channel: enhancement Technology: HEXFET® Type of transistor: P-MOSFET Kind of package: reel Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
IRLP3034PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 327A Power dissipation: 341W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® Gate charge: 108nC |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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|
IRFP7430PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 404A Power dissipation: 366W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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| S29AL008J55BFIR10 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29AL008J55BFIR20 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29AL008J55BFIR22 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29AL008J55TFIR10 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...85°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29AL008J55TFIR20 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...85°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29AL008J55TFNR10 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...125°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29AL008J55TFNR20 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...125°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29AL008J70BAN020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...125°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29AL008J70BFI010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29AL008J70BFI013 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S29AL008J70BFI020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. |
| IKW40N120CS7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 45ns
Turn-off time: 0.5µs
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 45ns
Turn-off time: 0.5µs
товару немає в наявності
В кошику
од. на суму грн.
| IRS2184STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Turn-off time: 290ns
Turn-on time: 720ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Turn-off time: 290ns
Turn-on time: 720ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of package: reel; tape
на замовлення 2442 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 113.21 грн |
| 10+ | 76.82 грн |
| 25+ | 72.78 грн |
| IRS2453DSTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
на замовлення 2454 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 107.99 грн |
| 10+ | 73.59 грн |
| 25+ | 71.97 грн |
| IR21094STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
на замовлення 1579 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 116.70 грн |
| 10+ | 81.68 грн |
| 25+ | 76.02 грн |
| 50+ | 71.16 грн |
| 100+ | 67.93 грн |
| 250+ | 67.12 грн |
| BAR6502VH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: varicap
Capacitance: 0.5pF
Leakage current: 20nA
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: varicap
Capacitance: 0.5pF
Leakage current: 20nA
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
товару немає в наявності
В кошику
од. на суму грн.
| FM24CL64B-DGTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| FM24C64B-GTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| S29AL008J55TFIR23 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| S29GL256S10DHA020 |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
В кошику
од. на суму грн.
| S29GL256S10DHB020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
В кошику
од. на суму грн.
| S29GL256S10DHB023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
В кошику
од. на суму грн.
| S29GL256S10DHI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
| S29GL256S10DHI020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
| S29GL256S10DHI023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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| S29GL256S10DHIV10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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| S29GL256S10DHIV20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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| S29GL256S10DHIV23 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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| S29GL256S10DHV010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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| S29GL256S10DHV020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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| S29GL256S10DHV023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| S29GL256S10FHI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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| S29GL01GT11DHIV20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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| S29GL01GT11DHIV23 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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| S29GL01GT11DHV023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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| S29GL01GT11FHIV10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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| S29GL01GT11FHIV20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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| S29GL01GT11FHIV23 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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| S29GL01GT11TFB020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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| S29GL01GT11TFIV10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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| S29GL01GT11TFIV20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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| S70GL02GT11FHB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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| S70GL02GT11FHI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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| FM25L16B-DG |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
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| FM25L16B-DGTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
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| CY7C1312KV18-250BZXCT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
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| FM25CL64B-DGTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
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| FM25L04B-DGTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
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| FM25V05-GTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 512kb FRAM
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 512kb FRAM
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
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| FM25V10-DG |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
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| S25FL128LAGNFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: WSON8
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: WSON8
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| TLV4906KFTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
на замовлення 717 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.13 грн |
| 25+ | 19.57 грн |
| BFQ19SH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Collector current: 0.12A
Power dissipation: 1W
Collector-emitter voltage: 20V
Frequency: 5.5GHz
Polarisation: bipolar
Kind of transistor: RF
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Collector current: 0.12A
Power dissipation: 1W
Collector-emitter voltage: 20V
Frequency: 5.5GHz
Polarisation: bipolar
Kind of transistor: RF
на замовлення 633 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.84 грн |
| 19+ | 21.75 грн |
| 25+ | 20.22 грн |
| IPP17N25S3100AKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Case: PG-TO220-3
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Power dissipation: 107W
Drain current: 13.3A
Drain-source voltage: 250V
Pulsed drain current: 68A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Case: PG-TO220-3
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Power dissipation: 107W
Drain current: 13.3A
Drain-source voltage: 250V
Pulsed drain current: 68A
на замовлення 482 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 148.05 грн |
| 4+ | 131.01 грн |
| 10+ | 124.54 грн |
| TLE4946KHTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
Type of sensor: Hall
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
Type of sensor: Hall
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| IPU95R750P7AKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Mounting: THT
Case: IPAK
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 0.75Ω
Drain current: 5.5A
Gate-source voltage: ±20V
Power dissipation: 73W
Drain-source voltage: 950V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Mounting: THT
Case: IPAK
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 0.75Ω
Drain current: 5.5A
Gate-source voltage: ±20V
Power dissipation: 73W
Drain-source voltage: 950V
на замовлення 147 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 85.72 грн |
| 10+ | 79.25 грн |
| 25+ | 71.16 грн |
| 50+ | 65.50 грн |
| TT210N12KOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150mA
Max. forward voltage: 1.65V
Load current: 210A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 6.6kA
Case: BG-PB50-1
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150mA
Max. forward voltage: 1.65V
Load current: 210A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 6.6kA
Case: BG-PB50-1
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6687.51 грн |
| IRF6218STRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Mounting: SMD
Case: D2PAK
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Mounting: SMD
Case: D2PAK
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
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| IRLP3034PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 327A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 108nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 327A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 108nC
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 322.23 грн |
| 10+ | 177.10 грн |
| IRFP7430PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
на замовлення 87 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 164.60 грн |
| 10+ | 133.43 грн |
| 25+ | 121.30 грн |
| 50+ | 112.41 грн |
| S29AL008J55BFIR10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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| S29AL008J55BFIR20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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| S29AL008J55BFIR22 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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| S29AL008J55TFIR10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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| S29AL008J55TFIR20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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| S29AL008J55TFNR10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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| S29AL008J55TFNR20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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| S29AL008J70BAN020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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| S29AL008J70BFI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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| S29AL008J70BFI013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.
| S29AL008J70BFI020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.










