Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148876) > Сторінка 2465 з 2482

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AUIRF7665S2TR AUIRF7665S2TR INFINEON TECHNOLOGIES auirf7665s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
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CY7C1470BV33-200BZXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
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CY7C1470BV33-167AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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CY7C1470BV33-167BZI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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BTS50080-1TEA BTS50080-1TEA INFINEON TECHNOLOGIES BTS500801TEA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Case: PG-TO252-5-11
Supply voltage: 5.5...30V DC
On-state resistance: 16mΩ
Output voltage: 39V
Output current: 10A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: SMD
на замовлення 2085 шт:
термін постачання 21-30 дні (днів)
2+283.97 грн
8+119.72 грн
21+112.90 грн
Мінімальне замовлення: 2
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BTS500251TEAAUMA1 INFINEON TECHNOLOGIES Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 24A; Ch: 1; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 24A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 5mΩ
Supply voltage: 5.8...18V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
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IPD053N06NATMA1 IPD053N06NATMA1 INFINEON TECHNOLOGIES IPD053N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Mounting: SMD
Drain current: 45A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Power dissipation: 83W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO252-3
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BSR316PH6327XTSA1 BSR316PH6327XTSA1 INFINEON TECHNOLOGIES BSR316PH6327XTSA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)
11+38.35 грн
17+22.50 грн
61+14.62 грн
167+13.79 грн
1000+13.26 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
CY7C4041KV13-667FCXC INFINEON TECHNOLOGIES Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
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IDP15E65D2XKSA1 IDP15E65D2XKSA1 INFINEON TECHNOLOGIES IDP15E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Semiconductor structure: single diode
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Load current: 15A
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
4+133.01 грн
18+52.28 грн
47+49.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IDP15E65D1XKSA1 IDP15E65D1XKSA1 INFINEON TECHNOLOGIES IDP15E65D1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Semiconductor structure: single diode
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Load current: 15A
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BFR360FH6327XTSA1 BFR360FH6327XTSA1 INFINEON TECHNOLOGIES BFR360F.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Power dissipation: 0.21W
Case: TSFP-3
Kind of package: reel; tape
Frequency: 14GHz
Mounting: SMD
Current gain: 90...160
Collector-emitter voltage: 6V
Collector current: 35mA
на замовлення 2972 шт:
термін постачання 21-30 дні (днів)
14+29.38 грн
24+16.37 грн
50+11.29 грн
100+9.70 грн
131+6.74 грн
359+6.36 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
S25FL128SAGNFV001 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
5+100.37 грн
10+85.62 грн
13+70.47 грн
35+66.68 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPP320N20N3GXKSA1 IPP320N20N3GXKSA1 INFINEON TECHNOLOGIES IPP320N20N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO220-3
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
2+252.15 грн
3+206.86 грн
6+179.58 грн
14+169.73 грн
Мінімальне замовлення: 2
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ITS5215L ITS5215L INFINEON TECHNOLOGIES ITS5215L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 5.5...40V DC
On-state resistance: 70mΩ
Output current: 3.7A
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IPP027N08N5AKSA1 IPP027N08N5AKSA1 INFINEON TECHNOLOGIES IPP027N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
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AUIRFN7107TR AUIRFN7107TR INFINEON TECHNOLOGIES auirfn7107.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 300W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 51nC
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
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AUIRFN8459TR AUIRFN8459TR INFINEON TECHNOLOGIES AUIRFN8459.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 50W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 40nC
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
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IPP042N03LGXKSA1 IPP042N03LGXKSA1 INFINEON TECHNOLOGIES IPP042N03LG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO220-3
Mounting: THT
Drain-source voltage: 30V
Drain current: 70A
On-state resistance: 4.2mΩ
Power dissipation: 79W
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
5+93.84 грн
10+80.32 грн
17+54.56 грн
46+51.53 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IDW15E65D2FKSA1 IDW15E65D2FKSA1 INFINEON TECHNOLOGIES IDW15E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
5+75.77 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IDV15E65D2XKSA1 IDV15E65D2XKSA1 INFINEON TECHNOLOGIES IDV15E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220FP-2
на замовлення 115 шт:
термін постачання 21-30 дні (днів)
6+77.52 грн
10+68.20 грн
19+47.74 грн
51+45.46 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TT104N14KOF TT104N14KOF INFINEON TECHNOLOGIES TT104N14KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 104A; BG-PB20-1; screw
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB20-1
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+10926.39 грн
15+10005.75 грн
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IR2011PBF IR2011PBF INFINEON TECHNOLOGIES IR2011SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
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IRFH6200TRPBF IRFH6200TRPBF INFINEON TECHNOLOGIES irfh6200pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1 INFINEON TECHNOLOGIES BSZ180P03NS3GATMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
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BSZ180P03NS3EGATMA BSZ180P03NS3EGATMA INFINEON TECHNOLOGIES BSZ180P03NS3EGATMA-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
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IRF7420TRPBF IRF7420TRPBF INFINEON TECHNOLOGIES irf7420pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BTS3035TF BTS3035TF INFINEON TECHNOLOGIES BTS3035TF.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Turn-off time: 210µs
Kind of integrated circuit: low-side
Output voltage: 40V
Turn-on time: 115µs
на замовлення 1153 шт:
термін постачання 21-30 дні (днів)
4+98.50 грн
10+92.44 грн
15+62.89 грн
40+59.10 грн
1000+56.07 грн
Мінімальне замовлення: 4
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BTS3035EJ BTS3035EJ INFINEON TECHNOLOGIES BTS3035EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Turn-off time: 210µs
Kind of integrated circuit: low-side
Output voltage: 40V
Turn-on time: 115µs
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
4+106.08 грн
5+88.65 грн
18+51.53 грн
49+48.49 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
XMC4800F144F1024AAXQMA1 XMC4800F144F1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
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XMC4800F100F1024AAXQMA1 XMC4800F100F1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 75
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
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XMC4800E196F1024AAXQMA1 XMC4800E196F1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
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IPW60R330P6FKSA1 IPW60R330P6FKSA1 INFINEON TECHNOLOGIES IPW60R330P6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 7.6A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 93W
Polarisation: unipolar
Gate charge: 22nC
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
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IPA60R330P6XKSA1 IPA60R330P6XKSA1 INFINEON TECHNOLOGIES IPA60R330P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
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BSZ123N08NS3GATMA1 BSZ123N08NS3GATMA1 INFINEON TECHNOLOGIES BSZ123N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
On-state resistance: 12.3mΩ
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 40A
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TLE7250VSJXUMA1 TLE7250VSJXUMA1 INFINEON TECHNOLOGIES TLE7250V.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7251VSJXUMA1 TLE7251VSJXUMA1 INFINEON TECHNOLOGIES TLE7251V.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7257SJXUMA1 TLE7257SJXUMA1 INFINEON TECHNOLOGIES TLE7257.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
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TLE7268SKXUMA1 TLE7268SKXUMA1 INFINEON TECHNOLOGIES TLE7268LCXUMA1.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
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TLE7250SJXUMA1 TLE7250SJXUMA1 INFINEON TECHNOLOGIES TLE7250.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7250XSJXUMA1 TLE7250XSJXUMA1 INFINEON TECHNOLOGIES TLE7250X.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7258DXUMA1 TLE7258DXUMA1 INFINEON TECHNOLOGIES TLE7258D.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
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TLE7268LCXUMA1 INFINEON TECHNOLOGIES TLE7268LCXUMA1.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
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FM24CL16B-DG INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
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FM24CL16B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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TT251N16KOFHPSA1 TT251N16KOFHPSA1 INFINEON TECHNOLOGIES TT251N18KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw
Max. off-state voltage: 1.6kV
Load current: 251A
Semiconductor structure: double series
Max. forward impulse current: 9.1kA
Case: BG-PB50-1
Max. forward voltage: 1.4V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Gate current: 300mA
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+15015.42 грн
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TT250N18KOFHPSA1 TT250N18KOFHPSA1 INFINEON TECHNOLOGIES TT250N18KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Case: BG-PB50-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+14851.40 грн
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IRFR3910TRLPBF IRFR3910TRLPBF INFINEON TECHNOLOGIES irfr3910pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES IKCM15H60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
1+813.56 грн
2+572.84 грн
5+541.77 грн
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BTF3125EJXUMA1 INFINEON TECHNOLOGIES BTF3125EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Mounting: SMD
Supply voltage: 3...5.5V DC
On-state resistance: 0.11Ω
Turn-on time: 1.35µs
Turn-off time: 2µs
Output voltage: 40V
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1W
Kind of package: reel; tape
Technology: HITFET®
Kind of integrated circuit: low-side
Operating temperature: -40...150°C
Case: PG-TDSO-8-31
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IRF8714TRPBF IRF8714TRPBF INFINEON TECHNOLOGIES irf8714pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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CY62136EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136FV30LL-45BVXIT INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136FV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136ESL-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62136ESL_MoBL(R)_2-Mbit_(128_K_X_16)_Static_RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeeecb32e8 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
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CY62136EV30LL-45BVXI INFINEON TECHNOLOGIES Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62136FV30LL-45BVXI INFINEON TECHNOLOGIES Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62136FV30LL-45ZSXA INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62136FV30LL-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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AUIRF7665S2TR auirf7665s2.pdf
AUIRF7665S2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
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CY7C1470BV33-200BZXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
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CY7C1470BV33-167AXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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CY7C1470BV33-167BZI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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BTS50080-1TEA BTS500801TEA.pdf
BTS50080-1TEA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Case: PG-TO252-5-11
Supply voltage: 5.5...30V DC
On-state resistance: 16mΩ
Output voltage: 39V
Output current: 10A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: SMD
на замовлення 2085 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+283.97 грн
8+119.72 грн
21+112.90 грн
Мінімальне замовлення: 2
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BTS500251TEAAUMA1 Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 24A; Ch: 1; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 24A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 5mΩ
Supply voltage: 5.8...18V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
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IPD053N06NATMA1 IPD053N06N-DTE.pdf
IPD053N06NATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Mounting: SMD
Drain current: 45A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Power dissipation: 83W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO252-3
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BSR316PH6327XTSA1 BSR316PH6327XTSA1.pdf
BSR316PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+38.35 грн
17+22.50 грн
61+14.62 грн
167+13.79 грн
1000+13.26 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
CY7C4041KV13-667FCXC Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
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IDP15E65D2XKSA1 IDP15E65D2.pdf
IDP15E65D2XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Semiconductor structure: single diode
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Load current: 15A
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+133.01 грн
18+52.28 грн
47+49.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IDP15E65D1XKSA1 IDP15E65D1.pdf
IDP15E65D1XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Semiconductor structure: single diode
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Load current: 15A
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BFR360FH6327XTSA1 BFR360F.pdf
BFR360FH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Power dissipation: 0.21W
Case: TSFP-3
Kind of package: reel; tape
Frequency: 14GHz
Mounting: SMD
Current gain: 90...160
Collector-emitter voltage: 6V
Collector current: 35mA
на замовлення 2972 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+29.38 грн
24+16.37 грн
50+11.29 грн
100+9.70 грн
131+6.74 грн
359+6.36 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
S25FL128SAGNFV001 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+100.37 грн
10+85.62 грн
13+70.47 грн
35+66.68 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPP320N20N3GXKSA1 IPP320N20N3G-DTE.pdf
IPP320N20N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO220-3
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+252.15 грн
3+206.86 грн
6+179.58 грн
14+169.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ITS5215L ITS5215L.pdf
ITS5215L
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 5.5...40V DC
On-state resistance: 70mΩ
Output current: 3.7A
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IPP027N08N5AKSA1 IPP027N08N5-DTE.pdf
IPP027N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
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AUIRFN7107TR auirfn7107.pdf
AUIRFN7107TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 300W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 51nC
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
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AUIRFN8459TR AUIRFN8459.pdf
AUIRFN8459TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 50W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 40nC
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
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IPP042N03LGXKSA1 IPP042N03LG-DTE.pdf
IPP042N03LGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO220-3
Mounting: THT
Drain-source voltage: 30V
Drain current: 70A
On-state resistance: 4.2mΩ
Power dissipation: 79W
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+93.84 грн
10+80.32 грн
17+54.56 грн
46+51.53 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IDW15E65D2FKSA1 IDW15E65D2.pdf
IDW15E65D2FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+75.77 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IDV15E65D2XKSA1 IDV15E65D2.pdf
IDV15E65D2XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220FP-2
на замовлення 115 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+77.52 грн
10+68.20 грн
19+47.74 грн
51+45.46 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TT104N14KOF TT104N14KOF.pdf
TT104N14KOF
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 104A; BG-PB20-1; screw
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB20-1
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+10926.39 грн
15+10005.75 грн
В кошику  од. на суму  грн.
IR2011PBF description IR2011SPBF.pdf
IR2011PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
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IRFH6200TRPBF irfh6200pbf.pdf
IRFH6200TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1-DTE.pdf
BSZ180P03NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
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BSZ180P03NS3EGATMA BSZ180P03NS3EGATMA-DTE.pdf
BSZ180P03NS3EGATMA
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
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IRF7420TRPBF irf7420pbf.pdf
IRF7420TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BTS3035TF BTS3035TF.pdf
BTS3035TF
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Turn-off time: 210µs
Kind of integrated circuit: low-side
Output voltage: 40V
Turn-on time: 115µs
на замовлення 1153 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+98.50 грн
10+92.44 грн
15+62.89 грн
40+59.10 грн
1000+56.07 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTS3035EJ BTS3035EJ.pdf
BTS3035EJ
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Turn-off time: 210µs
Kind of integrated circuit: low-side
Output voltage: 40V
Turn-on time: 115µs
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+106.08 грн
5+88.65 грн
18+51.53 грн
49+48.49 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
XMC4800F144F1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800F144F1024AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
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XMC4800F100F1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800F100F1024AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 75
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
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XMC4800E196F1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196F1024AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
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IPW60R330P6FKSA1 IPW60R330P6.pdf
IPW60R330P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 7.6A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 93W
Polarisation: unipolar
Gate charge: 22nC
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
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IPA60R330P6XKSA1 IPA60R330P6-DTE.pdf
IPA60R330P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
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BSZ123N08NS3GATMA1 BSZ123N08NS3G-DTE.pdf
BSZ123N08NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
On-state resistance: 12.3mΩ
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 40A
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TLE7250VSJXUMA1 TLE7250V.pdf
TLE7250VSJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7251VSJXUMA1 TLE7251V.pdf
TLE7251VSJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7257SJXUMA1 TLE7257.pdf
TLE7257SJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
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TLE7268SKXUMA1 TLE7268LCXUMA1.pdf
TLE7268SKXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
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TLE7250SJXUMA1 TLE7250.pdf
TLE7250SJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7250XSJXUMA1 TLE7250X.pdf
TLE7250XSJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7258DXUMA1 TLE7258D.pdf
TLE7258DXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
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TLE7268LCXUMA1 TLE7268LCXUMA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
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FM24CL16B-DG Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
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FM24CL16B-DGTR Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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TT251N16KOFHPSA1 TT251N18KOF.pdf
TT251N16KOFHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw
Max. off-state voltage: 1.6kV
Load current: 251A
Semiconductor structure: double series
Max. forward impulse current: 9.1kA
Case: BG-PB50-1
Max. forward voltage: 1.4V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Gate current: 300mA
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+15015.42 грн
В кошику  од. на суму  грн.
TT250N18KOFHPSA1 TT250N18KOF.pdf
TT250N18KOFHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Case: BG-PB50-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+14851.40 грн
В кошику  од. на суму  грн.
IRFR3910TRLPBF irfr3910pbf.pdf
IRFR3910TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IKCM15H60GAXKMA2 IKCM15H60GA.pdf
IKCM15H60GAXKMA2
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+813.56 грн
2+572.84 грн
5+541.77 грн
В кошику  од. на суму  грн.
BTF3125EJXUMA1 BTF3125EJ.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Mounting: SMD
Supply voltage: 3...5.5V DC
On-state resistance: 0.11Ω
Turn-on time: 1.35µs
Turn-off time: 2µs
Output voltage: 40V
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1W
Kind of package: reel; tape
Technology: HITFET®
Kind of integrated circuit: low-side
Operating temperature: -40...150°C
Case: PG-TDSO-8-31
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IRF8714TRPBF irf8714pbf.pdf
IRF8714TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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CY62136EV30LL-45BVXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
товару немає в наявності
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CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136FV30LL-45BVXIT
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
товару немає в наявності
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CY62136FV30LL-45ZSXIT Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
товару немає в наявності
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CY62136ESL-45ZSXI Infineon-CY62136ESL_MoBL(R)_2-Mbit_(128_K_X_16)_Static_RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeeecb32e8
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
товару немає в наявності
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CY62136EV30LL-45BVXI Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
товару немає в наявності
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CY62136FV30LL-45BVXI Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62136FV30LL-45ZSXA
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62136FV30LL-45ZSXI Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
товару немає в наявності
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