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BSC016N06NSATMA1 BSC016N06NSATMA1 INFINEON TECHNOLOGIES BSC016N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
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PVI5013RSPBF PVI5013RSPBF INFINEON TECHNOLOGIES pvi5013r.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Manufacturer series: PVI5013RPbF
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 8
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
2+205.82 грн
5+172.01 грн
Мінімальне замовлення: 2
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IPD60R3K3C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhancement
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BFP520H6327 BFP520H6327 INFINEON TECHNOLOGIES BFP520.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
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IRS2982STRPBF IRS2982STRPBF INFINEON TECHNOLOGIES IRS2982S-DTE.pdf Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Case: PG-DSO-8
Operating voltage: 12.8...18V DC
Output current: 200...400mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: PWM
Kind of integrated circuit: LED driver; SMPS controller
Topology: flyback
Mounting: SMD
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IPB042N10N3GATMA1 IPB042N10N3GATMA1 INFINEON TECHNOLOGIES IPB042N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
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IMZ120R045M1XKSA1 INFINEON TECHNOLOGIES Infineon-IMZ120R045M1-DS-v02_02-EN.pdf?fileId=5546d46269bda8df0169de350d7b3a3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Power dissipation: 114W
Mounting: THT
Kind of package: tube
Case: TO247-4
Polarisation: unipolar
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -10...20V
Drain current: 36A
Pulsed drain current: 130A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
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IDP30E120XKSA1 IDP30E120XKSA1 INFINEON TECHNOLOGIES IDP30E120XKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220-2
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
2+232.17 грн
8+113.91 грн
22+107.79 грн
Мінімальне замовлення: 2
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IPW65R420CFDFKSA1 IPW65R420CFDFKSA1 INFINEON TECHNOLOGIES IPW65R420CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO247-3
Mounting: THT
Drain-source voltage: 650V
Drain current: 8.7A
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+206.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRGP4263DPBF IRGP4263DPBF INFINEON TECHNOLOGIES IRGP4263DPBF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Collector-emitter voltage: 650V
Collector current: 90A
Type of transistor: IGBT
Power dissipation: 325W
Kind of package: tube
Mounting: THT
Case: TO247-3
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IPB025N08N3GATMA1 IPB025N08N3GATMA1 INFINEON TECHNOLOGIES IPB025N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
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IDW20G65C5XKSA1 IDW20G65C5XKSA1 INFINEON TECHNOLOGIES IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W
Power dissipation: 112W
Case: PG-TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 87A
Leakage current: 4.1µA
Kind of package: tube
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IDW40G65C5BXKSA2 IDW40G65C5BXKSA2 INFINEON TECHNOLOGIES IDW40G65C5B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Power dissipation: 112W
Case: PG-TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 87A
Leakage current: 4.1µA
Kind of package: tube
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IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50P04P4L-11-DataSheet-v01_01-EN.pdf?fileId=db3a304329a0f6ee0129db9d1df05c58 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
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SAK-TC1797-384F150E INFINEON TECHNOLOGIES SAK-TC1797-384F150E.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
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BCR10PNH6327 BCR10PNH6327 INFINEON TECHNOLOGIES BCR10PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 130MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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IRLHS6242TRPBF IRLHS6242TRPBF INFINEON TECHNOLOGIES irlhs6242pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IKD04N60RFATMA1 IKD04N60RFATMA1 INFINEON TECHNOLOGIES IKD04N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
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XMC4800 RELAX ETHERCAT KIT XMC4800 RELAX ETHERCAT KIT INFINEON TECHNOLOGIES xmc4700_4800.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Kit contents: development board with XMCmicrocontroller; expansion board
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4800
Components: XMC4800-F144
Number of add-on connectors: 2
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IPW60R070C6FKSA1 IPW60R070C6FKSA1 INFINEON TECHNOLOGIES IPW60R070C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BCR112 INFINEON TECHNOLOGIES bcr112series.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
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BCR108SH6327 BCR108SH6327 INFINEON TECHNOLOGIES BCR108WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Frequency: 170MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
на замовлення 3507 шт:
термін постачання 21-30 дні (днів)
57+7.33 грн
100+5.96 грн
174+5.20 грн
477+4.89 грн
3000+4.66 грн
Мінімальне замовлення: 57
В кошику  од. на суму  грн.
BCR148SH6327 BCR148SH6327 INFINEON TECHNOLOGIES BCR148.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 100MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 2668 шт:
термін постачання 21-30 дні (днів)
40+10.87 грн
55+7.49 грн
100+6.65 грн
175+5.27 грн
480+4.97 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
BCR191E6327 BCR191E6327 INFINEON TECHNOLOGIES BCR191.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 325 шт:
термін постачання 21-30 дні (днів)
100+4.35 грн
125+3.64 грн
325+2.95 грн
Мінімальне замовлення: 100
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BCR135SH6327 BCR135SH6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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BCR135WH6327 BCR135WH6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
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BCR192WH6327 BCR192WH6327 INFINEON TECHNOLOGIES BCR192.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
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BCR129E6327 BCR129E6327 INFINEON TECHNOLOGIES BCR129.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
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IPD90R1K2C3ATMA1 IPD90R1K2C3ATMA1 INFINEON TECHNOLOGIES IPD90R1K2C3ATMA1-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
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IPD90R1K2C3BTMA1 IPD90R1K2C3BTMA1 INFINEON TECHNOLOGIES IPD90R1K2C3BTMA1-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
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IKW08T120FKSA1 IKW08T120FKSA1 INFINEON TECHNOLOGIES IKW08T120_Rev2_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42893233e29 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
Collector current: 8A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 63ns
Turn-off time: 520ns
Type of transistor: IGBT
Power dissipation: 70W
Kind of package: tube
Gate charge: 53nC
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
3+182.77 грн
8+125.38 грн
21+118.50 грн
Мінімальне замовлення: 3
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IDWD30G120C5XKSA1 IDWD30G120C5XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD30G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d57e7f5492 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 0.24kA
Power dissipation: 332W
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CY7C1470V25-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
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CY7C1470V25-200BZI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
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CY7C1470V33-167AXC INFINEON TECHNOLOGIES ?docID=46217 Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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CY7C1470V33-167AXI INFINEON TECHNOLOGIES Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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CY7C1470V33-167BZI INFINEON TECHNOLOGIES Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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IRF9335TRPBF IRF9335TRPBF INFINEON TECHNOLOGIES irf9335pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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ISP752T ISP752T INFINEON TECHNOLOGIES ISP752T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
на замовлення 2060 шт:
термін постачання 21-30 дні (днів)
4+127.61 грн
5+104.73 грн
10+91.74 грн
28+87.15 грн
500+84.09 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
2EDL05I06PFXUMA1 2EDL05I06PFXUMA1 INFINEON TECHNOLOGIES 2EDL05x06xx.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; IGBT gate driver
Topology: IGBT half-bridge
Voltage class: 600V
Mounting: SMD
Case: PG-DSO-8
Supply voltage: 10...20V
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BSS225H6327FTSA1 BSS225H6327FTSA1 INFINEON TECHNOLOGIES BSS225H6327FTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT89
на замовлення 532 шт:
термін постачання 21-30 дні (днів)
9+50.55 грн
12+33.03 грн
50+18.42 грн
137+17.43 грн
500+16.90 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IPN50R800CEATMA1 IPN50R800CEATMA1 INFINEON TECHNOLOGIES IPN50R800CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Drain current: 4.8A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 12.4nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
на замовлення 2903 шт:
термін постачання 21-30 дні (днів)
8+52.69 грн
10+39.14 грн
25+35.32 грн
72+33.48 грн
100+32.34 грн
500+32.18 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPN50R950CEATMA1 IPN50R950CEATMA1 INFINEON TECHNOLOGIES IPN50R950CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Drain current: 4.2A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 10.5nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
на замовлення 2803 шт:
термін постачання 21-30 дні (днів)
15+27.99 грн
25+23.32 грн
50+18.50 грн
137+17.43 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
TLF80511TFV50ATMA1 TLF80511TFV50ATMA1 INFINEON TECHNOLOGIES TLF80511TF.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...40V
на замовлення 552 шт:
термін постачання 21-30 дні (днів)
6+64.98 грн
18+51.99 грн
49+48.93 грн
500+48.16 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSZ0506NSATMA1 INFINEON TECHNOLOGIES BSZ0506NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain current: 40A
On-state resistance: 4.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 27W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
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IPD50R399CPATMA1 IPD50R399CPATMA1 INFINEON TECHNOLOGIES IPD50R399CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain current: 9A
On-state resistance: 0.399Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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IPB50R199CPATMA1 IPB50R199CPATMA1 INFINEON TECHNOLOGIES IPB50R199CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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IPD50R520CPATMA1 IPD50R520CPATMA1 INFINEON TECHNOLOGIES IPD50R520CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain current: 7.1A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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BSC0501NSIATMA1 BSC0501NSIATMA1 INFINEON TECHNOLOGIES BSC0501NSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
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BSC0504NSIATMA1 BSC0504NSIATMA1 INFINEON TECHNOLOGIES BSC0504NSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain current: 64A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
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IPB50R140CPATMA1 IPB50R140CPATMA1 INFINEON TECHNOLOGIES IPB50R140CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 3.1A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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IPB50R250CPATMA1 IPB50R250CPATMA1 INFINEON TECHNOLOGIES IPB50R250CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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IPB50R299CPATMA1 IPB50R299CPATMA1 INFINEON TECHNOLOGIES IPB50R299CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 12A
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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IPD50P04P413ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Case: PG-TO252-3-313
Mounting: SMD
Drain current: -45A
On-state resistance: 12.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Technology: OptiMOS® -P2
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -40V
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IPD50R950CEATMA1 IPD50R950CEATMA1 INFINEON TECHNOLOGIES IPD50R950CE-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain current: 4.3A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 34W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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DD260N16K DD260N16K INFINEON TECHNOLOGIES DD260N18K.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
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IAUS260N10S5N019TATMA1 INFINEON TECHNOLOGIES Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Case: PG-HDSOP-16
Drain-source voltage: 100V
Drain current: 91A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 166nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 995A
Mounting: SMD
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IPB107N20NAATMA1 IPB107N20NAATMA1 INFINEON TECHNOLOGIES IPB107N20NA-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 820 шт:
термін постачання 21-30 дні (днів)
1+515.38 грн
3+433.47 грн
6+409.77 грн
250+399.06 грн
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IPB107N20N3GATMA1 IPB107N20N3GATMA1 INFINEON TECHNOLOGIES IPB107N20N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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IRFL4315TRPBF IRFL4315TRPBF INFINEON TECHNOLOGIES irfl4315pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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BSC016N06NSATMA1 BSC016N06NS-DTE.pdf
BSC016N06NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
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PVI5013RSPBF pvi5013r.pdf
PVI5013RSPBF
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Manufacturer series: PVI5013RPbF
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 8
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+205.82 грн
5+172.01 грн
Мінімальне замовлення: 2
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IPD60R3K3C6ATMA1 Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhancement
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BFP520H6327 BFP520.pdf
BFP520H6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
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IRS2982STRPBF IRS2982S-DTE.pdf
IRS2982STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Case: PG-DSO-8
Operating voltage: 12.8...18V DC
Output current: 200...400mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: PWM
Kind of integrated circuit: LED driver; SMPS controller
Topology: flyback
Mounting: SMD
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IPB042N10N3GATMA1 IPB042N10N3G-DTE.pdf
IPB042N10N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
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IMZ120R045M1XKSA1 Infineon-IMZ120R045M1-DS-v02_02-EN.pdf?fileId=5546d46269bda8df0169de350d7b3a3e
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Power dissipation: 114W
Mounting: THT
Kind of package: tube
Case: TO247-4
Polarisation: unipolar
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -10...20V
Drain current: 36A
Pulsed drain current: 130A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
товару немає в наявності
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IDP30E120XKSA1 IDP30E120XKSA1.pdf
IDP30E120XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220-2
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+232.17 грн
8+113.91 грн
22+107.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW65R420CFDFKSA1 IPW65R420CFD-DTE.pdf
IPW65R420CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO247-3
Mounting: THT
Drain-source voltage: 650V
Drain current: 8.7A
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+206.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRGP4263DPBF IRGP4263DPBF.pdf
IRGP4263DPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Collector-emitter voltage: 650V
Collector current: 90A
Type of transistor: IGBT
Power dissipation: 325W
Kind of package: tube
Mounting: THT
Case: TO247-3
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IPB025N08N3GATMA1 IPB025N08N3G-DTE.pdf
IPB025N08N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
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IDW20G65C5XKSA1 IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5
IDW20G65C5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W
Power dissipation: 112W
Case: PG-TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 87A
Leakage current: 4.1µA
Kind of package: tube
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IDW40G65C5BXKSA2 IDW40G65C5B.pdf
IDW40G65C5BXKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Power dissipation: 112W
Case: PG-TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 87A
Leakage current: 4.1µA
Kind of package: tube
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IPD50P04P4L11ATMA2 Infineon-IPD50P04P4L-11-DataSheet-v01_01-EN.pdf?fileId=db3a304329a0f6ee0129db9d1df05c58
IPD50P04P4L11ATMA2
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
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SAK-TC1797-384F150E SAK-TC1797-384F150E.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
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BCR10PNH6327 BCR10PNH6327.pdf
BCR10PNH6327
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 130MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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IRLHS6242TRPBF irlhs6242pbf.pdf
IRLHS6242TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IKD04N60RFATMA1 IKD04N60RF.pdf
IKD04N60RFATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
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XMC4800 RELAX ETHERCAT KIT xmc4700_4800.pdf
XMC4800 RELAX ETHERCAT KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Kit contents: development board with XMCmicrocontroller; expansion board
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4800
Components: XMC4800-F144
Number of add-on connectors: 2
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IPW60R070C6FKSA1 IPW60R070C6-DTE.pdf
IPW60R070C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BCR112 bcr112series.pdf
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
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BCR108SH6327 BCR108WH6327.pdf
BCR108SH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Frequency: 170MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
на замовлення 3507 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
57+7.33 грн
100+5.96 грн
174+5.20 грн
477+4.89 грн
3000+4.66 грн
Мінімальне замовлення: 57
В кошику  од. на суму  грн.
BCR148SH6327 BCR148.pdf
BCR148SH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 100MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 2668 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
40+10.87 грн
55+7.49 грн
100+6.65 грн
175+5.27 грн
480+4.97 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
BCR191E6327 BCR191.pdf
BCR191E6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 325 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
100+4.35 грн
125+3.64 грн
325+2.95 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
BCR135SH6327 bcr135.pdf
BCR135SH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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BCR135WH6327 bcr135.pdf
BCR135WH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
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BCR192WH6327 BCR192.pdf
BCR192WH6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
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BCR129E6327 BCR129.pdf
BCR129E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
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IPD90R1K2C3ATMA1 IPD90R1K2C3ATMA1-DTE.pdf
IPD90R1K2C3ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
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IPD90R1K2C3BTMA1 IPD90R1K2C3BTMA1-DTE.pdf
IPD90R1K2C3BTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
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IKW08T120FKSA1 IKW08T120_Rev2_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42893233e29
IKW08T120FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
Collector current: 8A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 63ns
Turn-off time: 520ns
Type of transistor: IGBT
Power dissipation: 70W
Kind of package: tube
Gate charge: 53nC
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+182.77 грн
8+125.38 грн
21+118.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IDWD30G120C5XKSA1 Infineon-IDWD30G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d57e7f5492
IDWD30G120C5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 0.24kA
Power dissipation: 332W
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CY7C1470V25-200AXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
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CY7C1470V25-200BZI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
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CY7C1470V33-167AXC ?docID=46217 Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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CY7C1470V33-167AXI Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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CY7C1470V33-167BZI Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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IRF9335TRPBF irf9335pbf.pdf
IRF9335TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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ISP752T ISP752T.pdf
ISP752T
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
на замовлення 2060 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+127.61 грн
5+104.73 грн
10+91.74 грн
28+87.15 грн
500+84.09 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
2EDL05I06PFXUMA1 2EDL05x06xx.pdf
2EDL05I06PFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; IGBT gate driver
Topology: IGBT half-bridge
Voltage class: 600V
Mounting: SMD
Case: PG-DSO-8
Supply voltage: 10...20V
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BSS225H6327FTSA1 BSS225H6327FTSA1.pdf
BSS225H6327FTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT89
на замовлення 532 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.55 грн
12+33.03 грн
50+18.42 грн
137+17.43 грн
500+16.90 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IPN50R800CEATMA1 IPN50R800CE.pdf
IPN50R800CEATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Drain current: 4.8A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 12.4nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
на замовлення 2903 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+52.69 грн
10+39.14 грн
25+35.32 грн
72+33.48 грн
100+32.34 грн
500+32.18 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPN50R950CEATMA1 IPN50R950CE.pdf
IPN50R950CEATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Drain current: 4.2A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 10.5nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
на замовлення 2803 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+27.99 грн
25+23.32 грн
50+18.50 грн
137+17.43 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
TLF80511TFV50ATMA1 TLF80511TF.pdf
TLF80511TFV50ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...40V
на замовлення 552 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+64.98 грн
18+51.99 грн
49+48.93 грн
500+48.16 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSZ0506NSATMA1 BSZ0506NS-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain current: 40A
On-state resistance: 4.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 27W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
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IPD50R399CPATMA1 IPD50R399CP-DTE.pdf
IPD50R399CPATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain current: 9A
On-state resistance: 0.399Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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IPB50R199CPATMA1 IPB50R199CP-DTE.pdf
IPB50R199CPATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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IPD50R520CPATMA1 IPD50R520CP-DTE.pdf
IPD50R520CPATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain current: 7.1A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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BSC0501NSIATMA1 BSC0501NSI-DTE.pdf
BSC0501NSIATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
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BSC0504NSIATMA1 BSC0504NSI-DTE.pdf
BSC0504NSIATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain current: 64A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
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IPB50R140CPATMA1 IPB50R140CP-DTE.pdf
IPB50R140CPATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 3.1A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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IPB50R250CPATMA1 IPB50R250CP-DTE.pdf
IPB50R250CPATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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IPB50R299CPATMA1 IPB50R299CP-DTE.pdf
IPB50R299CPATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 12A
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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IPD50P04P413ATMA1 Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Case: PG-TO252-3-313
Mounting: SMD
Drain current: -45A
On-state resistance: 12.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Technology: OptiMOS® -P2
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -40V
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IPD50R950CEATMA1 IPD50R950CE-DTE.pdf
IPD50R950CEATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain current: 4.3A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 34W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
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DD260N16K DD260N18K.pdf
DD260N16K
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
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IAUS260N10S5N019TATMA1 Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Case: PG-HDSOP-16
Drain-source voltage: 100V
Drain current: 91A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 166nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 995A
Mounting: SMD
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IPB107N20NAATMA1 IPB107N20NA-DTE.pdf
IPB107N20NAATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 820 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+515.38 грн
3+433.47 грн
6+409.77 грн
250+399.06 грн
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IPB107N20N3GATMA1 IPB107N20N3G-DTE.pdf
IPB107N20N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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IRFL4315TRPBF irfl4315pbf.pdf
IRFL4315TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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