Продукція > IXYS > Всі товари виробника IXYS (18217) > Сторінка 282 з 304

Обрати Сторінку:   [  << Попередня Сторінка ]  1 30 60 90 120 150 180 210 240 270 277 278 279 280 281 282 283 284 285 286 287 300 304  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IXFN80N60P3 IXFN80N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9D7CE511A5820&compId=IXFN80N60P3.pdf?ci_sign=8a40d9f6e2d287d4560f0df449c58f73299f151f Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Mechanical mounting: screw
Reverse recovery time: 250ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXFR80N60P3 IXFR80N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC627820&compId=IXFR80N60P3.pdf?ci_sign=e9b78ec09cf4552bf5bec18d9057ce9ca0bd8ebd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFX80N60P3 IXFX80N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3F18CAC491820&compId=IXFK(X)80N60P3.pdf?ci_sign=4323adc90294e70e31e6954053047cba50e6737f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
CPC1014N CPC1014N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9959065A1EB89F8BF&compId=cpc1014n.pdf?ci_sign=3aeb85f392fc7ce08ea820927771a3e31cc27ea4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 1ms
On-state resistance: 2Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 2ms
Kind of output: MOSFET
на замовлення 595 шт:
термін постачання 21-30 дні (днів)
3+165.76 грн
10+142.02 грн
12+78.54 грн
33+74.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1016N CPC1016N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 1ms
On-state resistance: 16Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 2ms
Kind of output: MOSFET
на замовлення 737 шт:
термін постачання 21-30 дні (днів)
3+173.45 грн
12+78.54 грн
33+74.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1018N CPC1018N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99590996ED3DAD8BF&compId=cpc1018n.pdf?ci_sign=b28f2894dbd3b0fd09841f0116736c4ef6be12f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 0.8Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 3ms
Kind of output: MOSFET
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
3+195.66 грн
7+137.26 грн
19+130.11 грн
50+125.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1018NTR CPC1018NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A756C0C7&compId=CPC1018N.pdf?ci_sign=8de638cd4dfb67d338b1795a33a1de15a2c8f02d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V DC; max. 600V AC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Type of relay: solid state
товару немає в наявності
В кошику  од. на суму  грн.
CPC1019N CPC1019N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3 Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 750mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 0.6Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 3ms
Kind of output: MOSFET
на замовлення 521 шт:
термін постачання 21-30 дні (днів)
3+159.78 грн
10+102.35 грн
25+96.79 грн
500+95.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFA12N65X2 IXFA12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFP12N65X2 IXFP12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Technology: HiPerFET™; X2-Class
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
2+300.75 грн
6+164.23 грн
16+155.50 грн
100+149.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP12N65X2M IXFP12N65X2M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097D0E76B22B8BF&compId=IXFP12N65X2M.pdf?ci_sign=4004da86a326be7c04a430838db3746583c9ea73 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA12N65X2 IXTA12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH12N65X2 IXTH12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Reverse recovery time: 270ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP12N65X2 IXTP12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP12N65X2M IXTP12N65X2M IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Pulsed drain current: 24A
товару немає в наявності
В кошику  од. на суму  грн.
IXXP12N65B4D1 IXXP12N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE458FEB7591820&compId=IXXP12N65B4D1.pdf?ci_sign=249f71380b36ecccc89266db49385297cce44081 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 34nC
Turn-on time: 44ns
Turn-off time: 245ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Collector-emitter voltage: 650V
товару немає в наявності
В кошику  од. на суму  грн.
IXFA30N60X IXFA30N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC33AE48335820&compId=IXFA(P)30N60X.pdf?ci_sign=3f4e92311c2721a4ac346223cdc73b4815585cbc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFH30N60P IXFH30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDB792F4701820&compId=IXFH(T%2CV)30N60P_S.pdf?ci_sign=f243b293ca1ba8eeb06cd56dcbf7608293a703c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 82nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFH30N60X IXFH30N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC2EDA71CB1820&compId=IXFH(T%2CQ)30N60X.pdf?ci_sign=f033c4069747bb2681467501c6f8cd2cd9c6c934 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFP30N60X IXFP30N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC33AE48335820&compId=IXFA(P)30N60X.pdf?ci_sign=3f4e92311c2721a4ac346223cdc73b4815585cbc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFR30N60P IXFR30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BE5820&compId=IXFR30N60P.pdf?ci_sign=5be33e103d5a63cbc4ef4bfe6326764cd805a948 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+806.56 грн
2+592.66 грн
5+560.13 грн
В кошику  од. на суму  грн.
IXKH30N60C5 IXKH30N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC70D820&compId=IXKH30N60C5.pdf?ci_sign=8051dd0ea17db6300c6cf149e84768e208bbb789 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 310W
Features of semiconductor devices: super junction coolmos
Gate charge: 53nC
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N60L2 IXTH30N60L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFA18N60X IXFA18N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDF95398E2D820&compId=IXFA(H%2CP)18N60X.pdf?ci_sign=d43d444d5e96d35a699d08922c4b96c997b61fd1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
3+189.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFH18N60P IXFH18N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0FB820&compId=IXFH18N60P.pdf?ci_sign=bd290d15bb21710ec04d5c26f4876dfbfab4b722 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
1+443.44 грн
4+283.24 грн
10+268.16 грн
30+261.82 грн
В кошику  од. на суму  грн.
IXFH18N60X IXFH18N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDF95398E2D820&compId=IXFA(H%2CP)18N60X.pdf?ci_sign=d43d444d5e96d35a699d08922c4b96c997b61fd1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+228.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP18N60X IXFP18N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDF95398E2D820&compId=IXFA(H%2CP)18N60X.pdf?ci_sign=d43d444d5e96d35a699d08922c4b96c997b61fd1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
3+188.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTQ18N60P IXTQ18N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13D3820&compId=IXTQ18N60P.pdf?ci_sign=451a7a0d0279ef24fd00f72f013c8b54076ab464 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXBH10N170 IXBH10N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE78C511FA9820&compId=IXBH(T)10N170.pdf?ci_sign=0c9673a4b5e2be6f1c4996b39032c9983fb1a0e9 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+766.41 грн
2+595.83 грн
5+563.30 грн
В кошику  од. на суму  грн.
IXBH10N300HV IXBH10N300HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0705F5B2EB820&compId=IXBA(H)10N300HV.pdf?ci_sign=66b2088cfab2f34b3e26428941209f928e916c26 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 46nC
Turn-on time: 805ns
Turn-off time: 2.13µs
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Power dissipation: 180W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+4956.44 грн
В кошику  од. на суму  грн.
IXGK72N60B3H1 IXGK72N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAEEB2C2E5D820&compId=IXGK(X)72N60B3H1.pdf?ci_sign=a5aba8865088ad6a2ff712e7b9f0f02cb4b7ffac Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGR72N60B3H1 IXGR72N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAFC0A869B5820&compId=IXGR72N60B3H1.pdf?ci_sign=3c041375a94491207a4b390f85ce524a1ae5bf68 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFP16N50P3 IXFP16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
2+306.73 грн
5+209.45 грн
13+198.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDD609PI IXDD609PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Case: DIP8
Supply voltage: 4.5...35V
Number of channels: 1
Kind of output: non-inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 379 шт:
термін постачання 21-30 дні (днів)
4+129.02 грн
10+88.07 грн
12+80.92 грн
32+76.96 грн
100+72.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFB52N90P IXFB52N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED47DC7EBC6CA18&compId=IXFB52N90P.pdf?ci_sign=a749aeddde2cd217116ff866933808aa3cec515f Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 52A
Gate-source voltage: ±30V
Power dissipation: 1.25kW
Drain-source voltage: 900V
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IXFK32N90P IXFK32N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC0C0B92EF5820&compId=IXFK(X)32N90P.pdf?ci_sign=9dde976cf23b0d36de82ad17094a5db783c3d5b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IXFN52N90P IXFN52N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA73091FE0E9820&compId=IXFN52N90P.pdf?ci_sign=c876402e11ac92f3ff5099168a1ab66cd6829552 Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 43A
Pulsed drain current: 104A
Gate-source voltage: ±40V
Power dissipation: 890W
Drain-source voltage: 900V
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXFX32N90P IXFX32N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC0C0B92EF5820&compId=IXFK(X)32N90P.pdf?ci_sign=9dde976cf23b0d36de82ad17094a5db783c3d5b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IXGR32N90B2D1 IXGR32N90B2D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAAA0C3ABDBB820&compId=IXGR32N90B2D1.pdf?ci_sign=4e3505393e88d60d0432f68251c3df3d2cf69303 Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Gate charge: 89nC
Turn-on time: 42ns
Turn-off time: 690ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 160W
Pulsed collector current: 200A
Collector-emitter voltage: 900V
Case: PLUS247™
Technology: HiPerFAST™; PT
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IX4427MTR IX4427MTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Case: DFN8
Mounting: SMD
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Supply voltage: 4.5...30V
на замовлення 1044 шт:
термін постачання 21-30 дні (днів)
4+134.14 грн
10+69.42 грн
21+46.49 грн
56+43.95 грн
500+42.29 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1230N CPC1230N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A3B115CE2158BF&compId=CPC1230N.pdf?ci_sign=b8e00fc01c27504e45ae02215abf73362bf11304 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NO
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
7+70.92 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CPC1230NTR CPC1230NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003BC0C7&compId=CPC1230N.pdf?ci_sign=51b764425757047fb9604f3af2a6261f2ca278e1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NO
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
товару немає в наявності
В кошику  од. на суму  грн.
CPC1231N CPC1231N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003D00C7&compId=CPC1231N.pdf?ci_sign=9ca136bb03d2f502faf86ff73f464df2a63aa0f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NC
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
на замовлення 345 шт:
термін постачання 21-30 дні (днів)
4+128.16 грн
10+93.62 грн
27+91.24 грн
100+87.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1231NTR CPC1231NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003D00C7&compId=CPC1231N.pdf?ci_sign=9ca136bb03d2f502faf86ff73f464df2a63aa0f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NC
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
товару немає в наявності
В кошику  од. на суму  грн.
DSEI60-12A DSEI60-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EC282191E2F55EA&compId=DSEI60-12A.pdf?ci_sign=bd633a5ae44e19e1732d359ef0d993c7e59880bb Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 225 шт:
термін постачання 21-30 дні (днів)
2+405.85 грн
7+359.40 грн
10+353.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA710 LCA710 IXYS littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 725 шт:
термін постачання 21-30 дні (днів)
2+364.83 грн
4+241.19 грн
11+227.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA710R LCA710R IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C268EC0C7&compId=LCA710.pdf?ci_sign=f0706be579127326c081b5058aa387a5c884213c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LCA710RTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C268EC0C7&compId=LCA710.pdf?ci_sign=f0706be579127326c081b5058aa387a5c884213c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LCA710S LCA710S IXYS littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 122 шт:
термін постачання 21-30 дні (днів)
1+598.94 грн
4+257.85 грн
10+243.57 грн
В кошику  од. на суму  грн.
LCA710STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C268EC0C7&compId=LCA710.pdf?ci_sign=f0706be579127326c081b5058aa387a5c884213c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IXBT24N170 IXBT24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Collector current: 24A
Power dissipation: 250W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Pulsed collector current: 230A
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+1146.62 грн
3+1006.80 грн
В кошику  од. на суму  грн.
IXFH140N10P IXFH140N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BABAB2D6ACB820&compId=IXFH(T)140N10P.pdf?ci_sign=5701ce435fe4808d2405b7787e975ae09c0c54dd Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Gate charge: 155nC
On-state resistance: 11mΩ
Power dissipation: 600W
Case: TO247-3
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+555.37 грн
3+405.42 грн
7+383.20 грн
В кошику  од. на суму  грн.
IXFT140N10P IXFT140N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BABAB2D6ACB820&compId=IXFH(T)140N10P.pdf?ci_sign=5701ce435fe4808d2405b7787e975ae09c0c54dd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Gate charge: 155nC
On-state resistance: 11mΩ
Power dissipation: 600W
Case: TO268
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
2+244.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTQ140N10P IXTQ140N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917396E4BA7E27&compId=IXTQ140N10P-DTE.pdf?ci_sign=d1fc712de0ef8b1c18e6bafe16c158a6fb6a90fd Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
IXTT140N10P IXTT140N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917396E4BA7E27&compId=IXTQ140N10P-DTE.pdf?ci_sign=d1fc712de0ef8b1c18e6bafe16c158a6fb6a90fd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
CPC3714CTR CPC3714CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6F45834445820&compId=CPC3714.pdf?ci_sign=7c8a88a834722e447942ac0190b2f6a9afcdcb0b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
Polarisation: unipolar
Drain current: 0.24A
Power dissipation: 1.4W
On-state resistance: 14Ω
Gate-source voltage: ±15V
Drain-source voltage: 350V
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
5+105.95 грн
10+62.12 грн
29+32.93 грн
78+31.10 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXTA4N80P IXTA4N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FAF0DE3BB820&compId=IXTA(P)4N80P.pdf?ci_sign=a56c5fce943e27469917e977e7f679ed743afc7d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTP4N80P IXTP4N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FAF0DE3BB820&compId=IXTA(P)4N80P.pdf?ci_sign=a56c5fce943e27469917e977e7f679ed743afc7d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
4+135.00 грн
9+111.07 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXGH4N250C IXYS DS100320(IXGH-GT4N250C).pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Pulsed collector current: 8A
Collector-emitter voltage: 2.5kV
Collector current: 13A
Gate-emitter voltage: ±20V
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Gate charge: 57nC
Turn-off time: 350ns
товару немає в наявності
В кошику  од. на суму  грн.
IXBK64N250 IXBK64N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF10A8A1ED318BF&compId=IXBK(X)64N250.pdf?ci_sign=1acedd6822cd20d6bde99e37f87b21e81c614e11 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Pulsed collector current: 600A
Collector-emitter voltage: 2.5kV
Collector current: 64A
Gate-emitter voltage: ±25V
Technology: BiMOSFET™; FRED
Case: TO264
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Gate charge: 400nC
Turn-off time: 397ns
Turn-on time: 632ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFN80N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9D7CE511A5820&compId=IXFN80N60P3.pdf?ci_sign=8a40d9f6e2d287d4560f0df449c58f73299f151f
IXFN80N60P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Mechanical mounting: screw
Reverse recovery time: 250ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXFR80N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC627820&compId=IXFR80N60P3.pdf?ci_sign=e9b78ec09cf4552bf5bec18d9057ce9ca0bd8ebd
IXFR80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFX80N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3F18CAC491820&compId=IXFK(X)80N60P3.pdf?ci_sign=4323adc90294e70e31e6954053047cba50e6737f
IXFX80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
CPC1014N pVersion=0046&contRep=ZT&docId=005056AB82531EE9959065A1EB89F8BF&compId=cpc1014n.pdf?ci_sign=3aeb85f392fc7ce08ea820927771a3e31cc27ea4
CPC1014N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 1ms
On-state resistance: 2Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 2ms
Kind of output: MOSFET
на замовлення 595 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+165.76 грн
10+142.02 грн
12+78.54 грн
33+74.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1016N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a
CPC1016N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 1ms
On-state resistance: 16Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 2ms
Kind of output: MOSFET
на замовлення 737 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+173.45 грн
12+78.54 грн
33+74.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1018N pVersion=0046&contRep=ZT&docId=005056AB82531EE99590996ED3DAD8BF&compId=cpc1018n.pdf?ci_sign=b28f2894dbd3b0fd09841f0116736c4ef6be12f5
CPC1018N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 0.8Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 3ms
Kind of output: MOSFET
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+195.66 грн
7+137.26 грн
19+130.11 грн
50+125.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1018NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A756C0C7&compId=CPC1018N.pdf?ci_sign=8de638cd4dfb67d338b1795a33a1de15a2c8f02d
CPC1018NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V DC; max. 600V AC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Type of relay: solid state
товару немає в наявності
В кошику  од. на суму  грн.
CPC1019N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3
CPC1019N
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 750mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 0.6Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 3ms
Kind of output: MOSFET
на замовлення 521 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+159.78 грн
10+102.35 грн
25+96.79 грн
500+95.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFA12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943
IXFA12N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFP12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943
IXFP12N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Technology: HiPerFET™; X2-Class
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+300.75 грн
6+164.23 грн
16+155.50 грн
100+149.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP12N65X2M pVersion=0046&contRep=ZT&docId=005056AB82531EE99097D0E76B22B8BF&compId=IXFP12N65X2M.pdf?ci_sign=4004da86a326be7c04a430838db3746583c9ea73
IXFP12N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295
IXTA12N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295
IXTH12N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Reverse recovery time: 270ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295
IXTP12N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP12N65X2M littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP12N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Pulsed drain current: 24A
товару немає в наявності
В кошику  од. на суму  грн.
IXXP12N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE458FEB7591820&compId=IXXP12N65B4D1.pdf?ci_sign=249f71380b36ecccc89266db49385297cce44081
IXXP12N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 34nC
Turn-on time: 44ns
Turn-off time: 245ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Collector-emitter voltage: 650V
товару немає в наявності
В кошику  од. на суму  грн.
IXFA30N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC33AE48335820&compId=IXFA(P)30N60X.pdf?ci_sign=3f4e92311c2721a4ac346223cdc73b4815585cbc
IXFA30N60X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFH30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDB792F4701820&compId=IXFH(T%2CV)30N60P_S.pdf?ci_sign=f243b293ca1ba8eeb06cd56dcbf7608293a703c8
IXFH30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 82nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFH30N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC2EDA71CB1820&compId=IXFH(T%2CQ)30N60X.pdf?ci_sign=f033c4069747bb2681467501c6f8cd2cd9c6c934
IXFH30N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFP30N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC33AE48335820&compId=IXFA(P)30N60X.pdf?ci_sign=3f4e92311c2721a4ac346223cdc73b4815585cbc
IXFP30N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFR30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BE5820&compId=IXFR30N60P.pdf?ci_sign=5be33e103d5a63cbc4ef4bfe6326764cd805a948
IXFR30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+806.56 грн
2+592.66 грн
5+560.13 грн
В кошику  од. на суму  грн.
IXKH30N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC70D820&compId=IXKH30N60C5.pdf?ci_sign=8051dd0ea17db6300c6cf149e84768e208bbb789
IXKH30N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 310W
Features of semiconductor devices: super junction coolmos
Gate charge: 53nC
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N60L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0
IXTH30N60L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFA18N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDF95398E2D820&compId=IXFA(H%2CP)18N60X.pdf?ci_sign=d43d444d5e96d35a699d08922c4b96c997b61fd1
IXFA18N60X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+189.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFH18N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0FB820&compId=IXFH18N60P.pdf?ci_sign=bd290d15bb21710ec04d5c26f4876dfbfab4b722
IXFH18N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+443.44 грн
4+283.24 грн
10+268.16 грн
30+261.82 грн
В кошику  од. на суму  грн.
IXFH18N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDF95398E2D820&compId=IXFA(H%2CP)18N60X.pdf?ci_sign=d43d444d5e96d35a699d08922c4b96c997b61fd1
IXFH18N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+228.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP18N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDF95398E2D820&compId=IXFA(H%2CP)18N60X.pdf?ci_sign=d43d444d5e96d35a699d08922c4b96c997b61fd1
IXFP18N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+188.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTQ18N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13D3820&compId=IXTQ18N60P.pdf?ci_sign=451a7a0d0279ef24fd00f72f013c8b54076ab464
IXTQ18N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXBH10N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE78C511FA9820&compId=IXBH(T)10N170.pdf?ci_sign=0c9673a4b5e2be6f1c4996b39032c9983fb1a0e9
IXBH10N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+766.41 грн
2+595.83 грн
5+563.30 грн
В кошику  од. на суму  грн.
IXBH10N300HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0705F5B2EB820&compId=IXBA(H)10N300HV.pdf?ci_sign=66b2088cfab2f34b3e26428941209f928e916c26
IXBH10N300HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 46nC
Turn-on time: 805ns
Turn-off time: 2.13µs
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Power dissipation: 180W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4956.44 грн
В кошику  од. на суму  грн.
IXGK72N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAEEB2C2E5D820&compId=IXGK(X)72N60B3H1.pdf?ci_sign=a5aba8865088ad6a2ff712e7b9f0f02cb4b7ffac
IXGK72N60B3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGR72N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAFC0A869B5820&compId=IXGR72N60B3H1.pdf?ci_sign=3c041375a94491207a4b390f85ce524a1ae5bf68
IXGR72N60B3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFP16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFP16N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+306.73 грн
5+209.45 грн
13+198.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDD609PI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDD609PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Case: DIP8
Supply voltage: 4.5...35V
Number of channels: 1
Kind of output: non-inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 379 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+129.02 грн
10+88.07 грн
12+80.92 грн
32+76.96 грн
100+72.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFB52N90P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED47DC7EBC6CA18&compId=IXFB52N90P.pdf?ci_sign=a749aeddde2cd217116ff866933808aa3cec515f
IXFB52N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 52A
Gate-source voltage: ±30V
Power dissipation: 1.25kW
Drain-source voltage: 900V
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IXFK32N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC0C0B92EF5820&compId=IXFK(X)32N90P.pdf?ci_sign=9dde976cf23b0d36de82ad17094a5db783c3d5b5
IXFK32N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IXFN52N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA73091FE0E9820&compId=IXFN52N90P.pdf?ci_sign=c876402e11ac92f3ff5099168a1ab66cd6829552
IXFN52N90P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 43A
Pulsed drain current: 104A
Gate-source voltage: ±40V
Power dissipation: 890W
Drain-source voltage: 900V
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXFX32N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC0C0B92EF5820&compId=IXFK(X)32N90P.pdf?ci_sign=9dde976cf23b0d36de82ad17094a5db783c3d5b5
IXFX32N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IXGR32N90B2D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAAA0C3ABDBB820&compId=IXGR32N90B2D1.pdf?ci_sign=4e3505393e88d60d0432f68251c3df3d2cf69303
IXGR32N90B2D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Gate charge: 89nC
Turn-on time: 42ns
Turn-off time: 690ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 160W
Pulsed collector current: 200A
Collector-emitter voltage: 900V
Case: PLUS247™
Technology: HiPerFAST™; PT
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IX4427MTR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4427MTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Case: DFN8
Mounting: SMD
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Supply voltage: 4.5...30V
на замовлення 1044 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+134.14 грн
10+69.42 грн
21+46.49 грн
56+43.95 грн
500+42.29 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1230N pVersion=0046&contRep=ZT&docId=005056AB82531EE995A3B115CE2158BF&compId=CPC1230N.pdf?ci_sign=b8e00fc01c27504e45ae02215abf73362bf11304
CPC1230N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NO
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+70.92 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CPC1230NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003BC0C7&compId=CPC1230N.pdf?ci_sign=51b764425757047fb9604f3af2a6261f2ca278e1
CPC1230NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NO
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
товару немає в наявності
В кошику  од. на суму  грн.
CPC1231N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003D00C7&compId=CPC1231N.pdf?ci_sign=9ca136bb03d2f502faf86ff73f464df2a63aa0f5
CPC1231N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NC
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
на замовлення 345 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+128.16 грн
10+93.62 грн
27+91.24 грн
100+87.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1231NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003D00C7&compId=CPC1231N.pdf?ci_sign=9ca136bb03d2f502faf86ff73f464df2a63aa0f5
CPC1231NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NC
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
товару немає в наявності
В кошику  од. на суму  грн.
DSEI60-12A pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EC282191E2F55EA&compId=DSEI60-12A.pdf?ci_sign=bd633a5ae44e19e1732d359ef0d993c7e59880bb
DSEI60-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 225 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+405.85 грн
7+359.40 грн
10+353.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA710 littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467
LCA710
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 725 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+364.83 грн
4+241.19 грн
11+227.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA710R pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C268EC0C7&compId=LCA710.pdf?ci_sign=f0706be579127326c081b5058aa387a5c884213c
LCA710R
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LCA710RTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C268EC0C7&compId=LCA710.pdf?ci_sign=f0706be579127326c081b5058aa387a5c884213c
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LCA710S littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467
LCA710S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 122 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+598.94 грн
4+257.85 грн
10+243.57 грн
В кошику  од. на суму  грн.
LCA710STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C268EC0C7&compId=LCA710.pdf?ci_sign=f0706be579127326c081b5058aa387a5c884213c
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IXBT24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83
IXBT24N170
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Collector current: 24A
Power dissipation: 250W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Pulsed collector current: 230A
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1146.62 грн
3+1006.80 грн
В кошику  од. на суму  грн.
IXFH140N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BABAB2D6ACB820&compId=IXFH(T)140N10P.pdf?ci_sign=5701ce435fe4808d2405b7787e975ae09c0c54dd
IXFH140N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Gate charge: 155nC
On-state resistance: 11mΩ
Power dissipation: 600W
Case: TO247-3
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+555.37 грн
3+405.42 грн
7+383.20 грн
В кошику  од. на суму  грн.
IXFT140N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BABAB2D6ACB820&compId=IXFH(T)140N10P.pdf?ci_sign=5701ce435fe4808d2405b7787e975ae09c0c54dd
IXFT140N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Gate charge: 155nC
On-state resistance: 11mΩ
Power dissipation: 600W
Case: TO268
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+244.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTQ140N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917396E4BA7E27&compId=IXTQ140N10P-DTE.pdf?ci_sign=d1fc712de0ef8b1c18e6bafe16c158a6fb6a90fd
IXTQ140N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
IXTT140N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917396E4BA7E27&compId=IXTQ140N10P-DTE.pdf?ci_sign=d1fc712de0ef8b1c18e6bafe16c158a6fb6a90fd
IXTT140N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
CPC3714CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6F45834445820&compId=CPC3714.pdf?ci_sign=7c8a88a834722e447942ac0190b2f6a9afcdcb0b
CPC3714CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
Polarisation: unipolar
Drain current: 0.24A
Power dissipation: 1.4W
On-state resistance: 14Ω
Gate-source voltage: ±15V
Drain-source voltage: 350V
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+105.95 грн
10+62.12 грн
29+32.93 грн
78+31.10 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXTA4N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FAF0DE3BB820&compId=IXTA(P)4N80P.pdf?ci_sign=a56c5fce943e27469917e977e7f679ed743afc7d
IXTA4N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTP4N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FAF0DE3BB820&compId=IXTA(P)4N80P.pdf?ci_sign=a56c5fce943e27469917e977e7f679ed743afc7d
IXTP4N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+135.00 грн
9+111.07 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXGH4N250C DS100320(IXGH-GT4N250C).pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Pulsed collector current: 8A
Collector-emitter voltage: 2.5kV
Collector current: 13A
Gate-emitter voltage: ±20V
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Gate charge: 57nC
Turn-off time: 350ns
товару немає в наявності
В кошику  од. на суму  грн.
IXBK64N250 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF10A8A1ED318BF&compId=IXBK(X)64N250.pdf?ci_sign=1acedd6822cd20d6bde99e37f87b21e81c614e11
IXBK64N250
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Pulsed collector current: 600A
Collector-emitter voltage: 2.5kV
Collector current: 64A
Gate-emitter voltage: ±25V
Technology: BiMOSFET™; FRED
Case: TO264
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Gate charge: 400nC
Turn-off time: 397ns
Turn-on time: 632ns
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 30 60 90 120 150 180 210 240 270 277 278 279 280 281 282 283 284 285 286 287 300 304  [ Наступна Сторінка >> ]