Продукція > IXYS > Всі товари виробника IXYS (18217) > Сторінка 284 з 304

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IXTA15N50L2 IXTA15N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D33E4DE449B820&compId=IXTA(H%2CP)15N50L2.pdf?ci_sign=585782a79e3d37974bcfba11f733e4bddedca203 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH15N50L2 IXTH15N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D33E4DE449B820&compId=IXTA(H%2CP)15N50L2.pdf?ci_sign=585782a79e3d37974bcfba11f733e4bddedca203 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
на замовлення 330 шт:
термін постачання 21-30 дні (днів)
1+760.43 грн
2+481.58 грн
6+455.40 грн
30+452.23 грн
120+437.95 грн
В кошику  од. на суму  грн.
IXTP15N50L2 IXTP15N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D33E4DE449B820&compId=IXTA(H%2CP)15N50L2.pdf?ci_sign=585782a79e3d37974bcfba11f733e4bddedca203 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
на замовлення 270 шт:
термін постачання 21-30 дні (днів)
1+698.05 грн
3+447.47 грн
6+423.67 грн
50+422.87 грн
В кошику  од. на суму  грн.
IXFH100N25P IXFH100N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC009820&compId=IXFH100N25P.pdf?ci_sign=8543bb8bfc45a45bf095f4e45a85eebb13fb2f81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 27mΩ
Drain current: 100A
Power dissipation: 600W
Drain-source voltage: 250V
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IXFH100N30X3 IXFH100N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 122nC
Reverse recovery time: 130ns
On-state resistance: 13.5mΩ
Drain current: 100A
Gate-source voltage: ±20V
Power dissipation: 48W
Drain-source voltage: 300V
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+916.78 грн
2+748.16 грн
4+706.90 грн
В кошику  од. на суму  грн.
IXXH100N60C3 IXXH100N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4E5B26A23820&compId=IXXH100N60C3.pdf?ci_sign=d34a8167233d2e352f733d1eb503fd101039fa57 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 95s
Gate charge: 150nC
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IXFK48N60P IXFK48N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A94E9FB88C78BF&compId=IXF_48N60P.pdf?ci_sign=2d8decaa7bf5853333c30536e1424c18bf5cd01b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1055.20 грн
В кошику  од. на суму  грн.
IXGA48N60A3 IXGA48N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 925ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
на замовлення 63 шт:
термін постачання 21-30 дні (днів)
2+366.54 грн
3+306.25 грн
4+253.09 грн
11+238.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGH48N60B3C1 IXGH48N60B3C1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B381E6C0878A5E28&compId=IXGH48N60B3C1-DTE.pdf?ci_sign=721837839cfff5b1fb45e8394d3190c2f5f5cb01 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+1155.16 грн
3+1029.81 грн
В кошику  од. на суму  грн.
IXGH48N60B3D1 IXGH48N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF95DB9A0A17820&compId=IXGH48N60B3D1.pdf?ci_sign=b88ef15e046b033bedf0667f01dda5696c066ffb Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+592.11 грн
3+441.91 грн
6+418.11 грн
В кошику  од. на суму  грн.
IXGH48N60C3D1 IXGH48N60C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA3ABB7C7C7820&compId=IXGH48N60C3D1.pdf?ci_sign=9e8b41e0496f7b4552d6efd4bbf0620554365264 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
1+730.52 грн
3+460.96 грн
6+436.36 грн
30+420.49 грн
120+419.70 грн
В кошику  од. на суму  грн.
CPC1117N CPC1117N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A38CFB799FD8BF&compId=cpc1117n.pdf?ci_sign=42c5ed3862d631ccfa4f4ee18df640d714bcd8ff Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 10ms
On-state resistance: 16Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
Turn-on time: 10ms
Kind of output: MOSFET
на замовлення 383 шт:
термін постачання 21-30 дні (днів)
5+98.26 грн
13+72.20 грн
36+68.23 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MMO62-12IO6 MMO62-12IO6 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B8F478DC2F5F9E28&compId=MMo62-12io6-DTE.pdf?ci_sign=10ad4c18982c2d0b7cdd649068aaadc5dde3b16c Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Electrical mounting: screw
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: opposing
Type of semiconductor module: thyristor
Gate current: 100mA
Max. forward voltage: 1.29V
Load current: 30A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
на замовлення 72 шт:
термін постачання 21-30 дні (днів)
1+1850.66 грн
В кошику  од. на суму  грн.
DSP8-12A DSP8-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF09019D31818BF&compId=DSP8-12A.pdf?ci_sign=4c1df90e7f9f491684d5e61712aacbe284a80828 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
2+225.56 грн
5+159.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSP8-12AS-TRL DSP8-12AS-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
на замовлення 792 шт:
термін постачання 21-30 дні (днів)
2+225.56 грн
5+186.44 грн
6+166.61 грн
16+157.88 грн
100+156.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSP8-12AS-TUB DSP8-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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CPC1945Y CPC1945Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4384923AE38BF&compId=CPC1945Y.pdf?ci_sign=a1bb4db4c3f93e15666e949682f73ba24088c71a Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 1A
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
On-state resistance: 0.34Ω
Switched voltage: max. 120V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
2+221.29 грн
7+142.02 грн
19+134.08 грн
75+128.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH24N80P IXFH24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
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IXFK24N80P IXFK24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+909.09 грн
2+606.94 грн
В кошику  од. на суму  грн.
IXFK27N80Q IXFK27N80Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
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IXFK34N80 IXFK34N80 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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IXFK44N80P IXFK44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 255 шт:
термін постачання 21-30 дні (днів)
1+1243.17 грн
3+1090.90 грн
10+1048.85 грн
В кошику  од. на суму  грн.
IXFK44N80Q3 IXFK44N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+1148.33 грн
В кошику  од. на суму  грн.
MXHV9910B MXHV9910B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Input voltage: 8...450V
Frequency: 64kHz
Topology: buck
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MXHV9910BE IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Input voltage: 8...450V
Frequency: 64kHz
Topology: buck
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MXHV9910BETR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Input voltage: 8...450V
Frequency: 64kHz
Topology: buck
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MXHV9910BTR MXHV9910BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Input voltage: 8...450V
Frequency: 64kHz
Topology: buck
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IXTA08N50D2 IXTA08N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXTP08N50D2 IXTP08N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
на замовлення 264 шт:
термін постачання 21-30 дні (днів)
2+214.46 грн
9+115.83 грн
23+109.49 грн
100+106.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTY08N50D2 IXTY08N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXYH75N120B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
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В кошику  од. на суму  грн.
CPC2025N CPC2025N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BD80C7&compId=CPC2025N.pdf?ci_sign=68e0652c8b9ad4e6df71484331099d8df430468c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Case: SO8
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
4+122.18 грн
10+100.76 грн
26+95.21 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC2025NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BD80C7&compId=CPC2025N.pdf?ci_sign=68e0652c8b9ad4e6df71484331099d8df430468c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Case: SO8
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
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IXKC15N60C5 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
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CLA100PD1200NA CLA100PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Case: SOT227B
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 40/80mA
Max. forward voltage: 1.21V
Threshold on-voltage: 0.83V
Load current: 100A
Max. off-state voltage: 1.2kV
Max. load current: 150A
Max. forward impulse current: 1.5kA
Semiconductor structure: double series
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+2210.36 грн
2+1940.61 грн
В кошику  од. на суму  грн.
IXA20PG1200DHGLB IXA20PG1200DHGLB IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA72D372C388143&compId=IXA20PG1200DHGLB.pdf?ci_sign=92f5d9e5dd1ef2369a8aa01671aa29244ac7835a pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3 Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Electrical mounting: SMT
Case: SMPD-B
Semiconductor structure: diode/transistor
Technology: ISOPLUS™; Sonic FRD™
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Max. off-state voltage: 1.2kV
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+724.54 грн
2+627.57 грн
3+590.28 грн
10+570.44 грн
В кошику  од. на суму  грн.
IXA30RG1200DHGLB IXA30RG1200DHGLB IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA759B209DC6143&compId=IXA30RG1200DHGLB.pdf?ci_sign=f6eb0238051d648061ebca520c13ec7c26cb22f3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3 Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Topology: boost chopper
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 147W
Max. off-state voltage: 1.2kV
Case: SMPD-B
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
1+451.98 грн
В кошику  од. на суму  грн.
CPC1135N CPC1135N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
4+135.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1968J CPC1968J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92FB94A0B59FE0C4&compId=CPC1968.pdf?ci_sign=160af4d4d6569d9dbcf0943ab2d83726dac949bb Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Operating temperature: -40...85°C
Release time: 0.07ms
Max. operating current: 5A
Operate time: 4.6ms
Body dimensions: 26.2x20x5mm
Control current: 10mA
Control current max.: 100mA
On-state resistance: 0.35Ω
Control voltage: 0.9...1.56V DC
Switched voltage: max. 500V DC
Relay variant: Photo MOSFET
Mounting: THT
Type of relay: solid state
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+1390.98 грн
2+1221.02 грн
В кошику  од. на суму  грн.
IXGR24N120C3D1 IXGR24N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC6F05F14E3820&compId=IXGR24N120C3D1.pdf?ci_sign=af08643f59ea5edc5b65e80d47d0185b2b6c112f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
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IXGR55N120A3H1 IXGR55N120A3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD491737D79820&compId=IXGR55N120A3H1.pdf?ci_sign=8ff4a90dc5b497cce2442de4bf97526e3dcdb303 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
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IXGR6N170A IXGR6N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE50C49C1F3820&compId=IXGR6N170A.pdf?ci_sign=8948416bce328945a3a4ac2809f5d3317343395b Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
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IXTX90N25L2 IXTX90N25L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D374EE5CD85820&compId=IXTK(X)90N25L2.pdf?ci_sign=80bf7e49eeeb244aa8728ba401ffec2fb39f8e28 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Gate charge: 640nC
Reverse recovery time: 266ns
On-state resistance: 36mΩ
Kind of channel: enhancement
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
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IXTX90P20P IXTX90P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ECBA42874F8BF&compId=IXT_90P20P.pdf?ci_sign=51c0ccf646b8ee88bb3b4a442efcdd134c7b9d0f Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
1+1144.91 грн
3+1005.22 грн
30+966.34 грн
В кошику  од. на суму  грн.
MCD26-08IO1B MCD26-08IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFCCD2F11B1C0C4&compId=MCD26-08io1B.pdf?ci_sign=9a6942d374cdf75d8a1ab1d84902414ef95e38c5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.27V
Load current: 27A
Max. load current: 42A
Max. forward impulse current: 520A
Max. off-state voltage: 0.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+1420.03 грн
В кошику  од. на суму  грн.
MCD56-08IO1B MCD56-08IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF1B629813A0C4&compId=MCD56-08io1B.pdf?ci_sign=821060ef1b8511e1aedf945e2c2f1ad91acdf64e Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 0.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1771.20 грн
2+1555.82 грн
3+1555.03 грн
В кошику  од. на суму  грн.
MCD26-12IO1B MCD26-12IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB82531ED997E95549EA455820&compId=MCD26-12io1B.pdf?ci_sign=4127869398e286376682561c16b0525127e15c21 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.27V
Load current: 27A
Max. load current: 42A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+1477.28 грн
2+1297.18 грн
10+1250.37 грн
В кошику  од. на суму  грн.
IXTP150N15X4 IXTP150N15X4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2893A5E251C9820&compId=IXTH(P)150N15X4.pdf?ci_sign=e12fd6602b056817d889d35f60740c06e4058b1c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
на замовлення 289 шт:
термін постачання 21-30 дні (днів)
1+673.28 грн
3+403.04 грн
7+380.82 грн
50+366.54 грн
В кошику  од. на суму  грн.
IXTQ150N15P IXTQ150N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917F39DF4CDE27&compId=IXTK150N15P-DTE.pdf?ci_sign=c9c97c1328cecc3554885e3cfd29e98d52e29bb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 150V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+482.74 грн
В кошику  од. на суму  грн.
IXTA3N150HV IXTA3N150HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916E9820&compId=IXTA3N150HV.pdf?ci_sign=dad1621cba0475c0d32363ea748872e5286105f5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Case: TO263
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Drain current: 3A
Power dissipation: 250W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
1+692.07 грн
2+555.37 грн
5+525.22 грн
50+508.56 грн
В кошику  од. на суму  грн.
IXTQ3N150M IXTQ3N150M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284803F9A26F820&compId=IXTQ3N150M.pdf?ci_sign=c567fa7384752102128d132316a07a52fc6dca9f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
On-state resistance: 7.3Ω
Drain current: 1.83A
Pulsed drain current: 9A
Gate-source voltage: ±30V
Power dissipation: 73W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFP10N60P IXFP10N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
3+173.75 грн
7+151.54 грн
17+143.60 грн
50+138.84 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP10N60P IXTP10N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12F7820&compId=IXTP10N60P.pdf?ci_sign=c8a5cd7138ab74dee443f89a317f173a43bfad11 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXFN110N60P3 IXFN110N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C7EC3367918BF&compId=IXFN110N60P3.pdf?ci_sign=d0968e82a80d72ea8c08fc609d26ee5426b318be Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 254nC
Reverse recovery time: 250ns
Pulsed drain current: 275A
товару немає в наявності
В кошику  од. на суму  грн.
IXFA10N60P IXFA10N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFB110N60P3 IXFB110N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED44AB02F76EA18&compId=IXFB110N60P3.pdf?ci_sign=0293312a91129e825963c35231f446f72a37e881 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
CPC9909NTR CPC9909NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
CPC9909N CPC9909N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
2+237.53 грн
5+180.10 грн
9+104.73 грн
25+99.17 грн
100+97.59 грн
300+95.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC9909NE CPC9909NE IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
на замовлення 1016 шт:
термін постачання 21-30 дні (днів)
2+216.17 грн
9+105.52 грн
25+99.97 грн
50+96.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC9909NETR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IXTA15N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D33E4DE449B820&compId=IXTA(H%2CP)15N50L2.pdf?ci_sign=585782a79e3d37974bcfba11f733e4bddedca203
IXTA15N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH15N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D33E4DE449B820&compId=IXTA(H%2CP)15N50L2.pdf?ci_sign=585782a79e3d37974bcfba11f733e4bddedca203
IXTH15N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
на замовлення 330 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+760.43 грн
2+481.58 грн
6+455.40 грн
30+452.23 грн
120+437.95 грн
В кошику  од. на суму  грн.
IXTP15N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D33E4DE449B820&compId=IXTA(H%2CP)15N50L2.pdf?ci_sign=585782a79e3d37974bcfba11f733e4bddedca203
IXTP15N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
на замовлення 270 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+698.05 грн
3+447.47 грн
6+423.67 грн
50+422.87 грн
В кошику  од. на суму  грн.
IXFH100N25P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC009820&compId=IXFH100N25P.pdf?ci_sign=8543bb8bfc45a45bf095f4e45a85eebb13fb2f81
IXFH100N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 27mΩ
Drain current: 100A
Power dissipation: 600W
Drain-source voltage: 250V
товару немає в наявності
В кошику  од. на суму  грн.
IXFH100N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFH100N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 122nC
Reverse recovery time: 130ns
On-state resistance: 13.5mΩ
Drain current: 100A
Gate-source voltage: ±20V
Power dissipation: 48W
Drain-source voltage: 300V
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+916.78 грн
2+748.16 грн
4+706.90 грн
В кошику  од. на суму  грн.
IXXH100N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4E5B26A23820&compId=IXXH100N60C3.pdf?ci_sign=d34a8167233d2e352f733d1eb503fd101039fa57
IXXH100N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 95s
Gate charge: 150nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFK48N60P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A94E9FB88C78BF&compId=IXF_48N60P.pdf?ci_sign=2d8decaa7bf5853333c30536e1424c18bf5cd01b
IXFK48N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1055.20 грн
В кошику  од. на суму  грн.
IXGA48N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff
IXGA48N60A3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 925ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
на замовлення 63 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+366.54 грн
3+306.25 грн
4+253.09 грн
11+238.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGH48N60B3C1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B381E6C0878A5E28&compId=IXGH48N60B3C1-DTE.pdf?ci_sign=721837839cfff5b1fb45e8394d3190c2f5f5cb01
IXGH48N60B3C1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1155.16 грн
3+1029.81 грн
В кошику  од. на суму  грн.
IXGH48N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF95DB9A0A17820&compId=IXGH48N60B3D1.pdf?ci_sign=b88ef15e046b033bedf0667f01dda5696c066ffb
IXGH48N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+592.11 грн
3+441.91 грн
6+418.11 грн
В кошику  од. на суму  грн.
IXGH48N60C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA3ABB7C7C7820&compId=IXGH48N60C3D1.pdf?ci_sign=9e8b41e0496f7b4552d6efd4bbf0620554365264
IXGH48N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+730.52 грн
3+460.96 грн
6+436.36 грн
30+420.49 грн
120+419.70 грн
В кошику  од. на суму  грн.
CPC1117N pVersion=0046&contRep=ZT&docId=005056AB82531EE995A38CFB799FD8BF&compId=cpc1117n.pdf?ci_sign=42c5ed3862d631ccfa4f4ee18df640d714bcd8ff
CPC1117N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 10ms
On-state resistance: 16Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
Turn-on time: 10ms
Kind of output: MOSFET
на замовлення 383 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+98.26 грн
13+72.20 грн
36+68.23 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MMO62-12IO6 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B8F478DC2F5F9E28&compId=MMo62-12io6-DTE.pdf?ci_sign=10ad4c18982c2d0b7cdd649068aaadc5dde3b16c
MMO62-12IO6
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Electrical mounting: screw
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: opposing
Type of semiconductor module: thyristor
Gate current: 100mA
Max. forward voltage: 1.29V
Load current: 30A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
на замовлення 72 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1850.66 грн
В кошику  од. на суму  грн.
DSP8-12A pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF09019D31818BF&compId=DSP8-12A.pdf?ci_sign=4c1df90e7f9f491684d5e61712aacbe284a80828
DSP8-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+225.56 грн
5+159.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSP8-12AS-TRL pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308
DSP8-12AS-TRL
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
на замовлення 792 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+225.56 грн
5+186.44 грн
6+166.61 грн
16+157.88 грн
100+156.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSP8-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308
DSP8-12AS-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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CPC1945Y pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4384923AE38BF&compId=CPC1945Y.pdf?ci_sign=a1bb4db4c3f93e15666e949682f73ba24088c71a
CPC1945Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 1A
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
On-state resistance: 0.34Ω
Switched voltage: max. 120V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+221.29 грн
7+142.02 грн
19+134.08 грн
75+128.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFH24N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFK24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFK24N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+909.09 грн
2+606.94 грн
В кошику  од. на суму  грн.
IXFK27N80Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd
IXFK27N80Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFK34N80 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0
IXFK34N80
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFK44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d
IXFK44N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 255 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1243.17 грн
3+1090.90 грн
10+1048.85 грн
В кошику  од. на суму  грн.
IXFK44N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10
IXFK44N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1148.33 грн
В кошику  од. на суму  грн.
MXHV9910B pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
MXHV9910B
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Input voltage: 8...450V
Frequency: 64kHz
Topology: buck
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MXHV9910BE pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Input voltage: 8...450V
Frequency: 64kHz
Topology: buck
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MXHV9910BETR pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Input voltage: 8...450V
Frequency: 64kHz
Topology: buck
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MXHV9910BTR pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
MXHV9910BTR
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Input voltage: 8...450V
Frequency: 64kHz
Topology: buck
товару немає в наявності
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IXTA08N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c
IXTA08N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXTP08N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c
IXTP08N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
на замовлення 264 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+214.46 грн
9+115.83 грн
23+109.49 грн
100+106.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTY08N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c
IXTY08N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXYH75N120B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
товару немає в наявності
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CPC2025N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BD80C7&compId=CPC2025N.pdf?ci_sign=68e0652c8b9ad4e6df71484331099d8df430468c
CPC2025N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Case: SO8
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+122.18 грн
10+100.76 грн
26+95.21 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC2025NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BD80C7&compId=CPC2025N.pdf?ci_sign=68e0652c8b9ad4e6df71484331099d8df430468c
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Case: SO8
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
товару немає в наявності
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IXKC15N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
товару немає в наявності
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CLA100PD1200NA Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969
CLA100PD1200NA
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Case: SOT227B
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 40/80mA
Max. forward voltage: 1.21V
Threshold on-voltage: 0.83V
Load current: 100A
Max. off-state voltage: 1.2kV
Max. load current: 150A
Max. forward impulse current: 1.5kA
Semiconductor structure: double series
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2210.36 грн
2+1940.61 грн
В кошику  од. на суму  грн.
IXA20PG1200DHGLB pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA72D372C388143&compId=IXA20PG1200DHGLB.pdf?ci_sign=92f5d9e5dd1ef2369a8aa01671aa29244ac7835a pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3
IXA20PG1200DHGLB
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Electrical mounting: SMT
Case: SMPD-B
Semiconductor structure: diode/transistor
Technology: ISOPLUS™; Sonic FRD™
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Max. off-state voltage: 1.2kV
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+724.54 грн
2+627.57 грн
3+590.28 грн
10+570.44 грн
В кошику  од. на суму  грн.
IXA30RG1200DHGLB pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA759B209DC6143&compId=IXA30RG1200DHGLB.pdf?ci_sign=f6eb0238051d648061ebca520c13ec7c26cb22f3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3
IXA30RG1200DHGLB
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Topology: boost chopper
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 147W
Max. off-state voltage: 1.2kV
Case: SMPD-B
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+451.98 грн
В кошику  од. на суму  грн.
CPC1135N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21
CPC1135N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+135.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1968J pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92FB94A0B59FE0C4&compId=CPC1968.pdf?ci_sign=160af4d4d6569d9dbcf0943ab2d83726dac949bb
CPC1968J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Operating temperature: -40...85°C
Release time: 0.07ms
Max. operating current: 5A
Operate time: 4.6ms
Body dimensions: 26.2x20x5mm
Control current: 10mA
Control current max.: 100mA
On-state resistance: 0.35Ω
Control voltage: 0.9...1.56V DC
Switched voltage: max. 500V DC
Relay variant: Photo MOSFET
Mounting: THT
Type of relay: solid state
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1390.98 грн
2+1221.02 грн
В кошику  од. на суму  грн.
IXGR24N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC6F05F14E3820&compId=IXGR24N120C3D1.pdf?ci_sign=af08643f59ea5edc5b65e80d47d0185b2b6c112f
IXGR24N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGR55N120A3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD491737D79820&compId=IXGR55N120A3H1.pdf?ci_sign=8ff4a90dc5b497cce2442de4bf97526e3dcdb303
IXGR55N120A3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGR6N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE50C49C1F3820&compId=IXGR6N170A.pdf?ci_sign=8948416bce328945a3a4ac2809f5d3317343395b
IXGR6N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXTX90N25L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D374EE5CD85820&compId=IXTK(X)90N25L2.pdf?ci_sign=80bf7e49eeeb244aa8728ba401ffec2fb39f8e28
IXTX90N25L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Gate charge: 640nC
Reverse recovery time: 266ns
On-state resistance: 36mΩ
Kind of channel: enhancement
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
товару немає в наявності
В кошику  од. на суму  грн.
IXTX90P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ECBA42874F8BF&compId=IXT_90P20P.pdf?ci_sign=51c0ccf646b8ee88bb3b4a442efcdd134c7b9d0f
IXTX90P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1144.91 грн
3+1005.22 грн
30+966.34 грн
В кошику  од. на суму  грн.
MCD26-08IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFCCD2F11B1C0C4&compId=MCD26-08io1B.pdf?ci_sign=9a6942d374cdf75d8a1ab1d84902414ef95e38c5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCD26-08IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.27V
Load current: 27A
Max. load current: 42A
Max. forward impulse current: 520A
Max. off-state voltage: 0.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1420.03 грн
В кошику  од. на суму  грн.
MCD56-08IO1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF1B629813A0C4&compId=MCD56-08io1B.pdf?ci_sign=821060ef1b8511e1aedf945e2c2f1ad91acdf64e
MCD56-08IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 0.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1771.20 грн
2+1555.82 грн
3+1555.03 грн
В кошику  од. на суму  грн.
MCD26-12IO1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB82531ED997E95549EA455820&compId=MCD26-12io1B.pdf?ci_sign=4127869398e286376682561c16b0525127e15c21 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD26-12IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.27V
Load current: 27A
Max. load current: 42A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1477.28 грн
2+1297.18 грн
10+1250.37 грн
В кошику  од. на суму  грн.
IXTP150N15X4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2893A5E251C9820&compId=IXTH(P)150N15X4.pdf?ci_sign=e12fd6602b056817d889d35f60740c06e4058b1c
IXTP150N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
на замовлення 289 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+673.28 грн
3+403.04 грн
7+380.82 грн
50+366.54 грн
В кошику  од. на суму  грн.
IXTQ150N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917F39DF4CDE27&compId=IXTK150N15P-DTE.pdf?ci_sign=c9c97c1328cecc3554885e3cfd29e98d52e29bb2
IXTQ150N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 150V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+482.74 грн
В кошику  од. на суму  грн.
IXTA3N150HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916E9820&compId=IXTA3N150HV.pdf?ci_sign=dad1621cba0475c0d32363ea748872e5286105f5
IXTA3N150HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Case: TO263
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Drain current: 3A
Power dissipation: 250W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+692.07 грн
2+555.37 грн
5+525.22 грн
50+508.56 грн
В кошику  од. на суму  грн.
IXTQ3N150M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284803F9A26F820&compId=IXTQ3N150M.pdf?ci_sign=c567fa7384752102128d132316a07a52fc6dca9f
IXTQ3N150M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
On-state resistance: 7.3Ω
Drain current: 1.83A
Pulsed drain current: 9A
Gate-source voltage: ±30V
Power dissipation: 73W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFP10N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2
IXFP10N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+173.75 грн
7+151.54 грн
17+143.60 грн
50+138.84 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP10N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12F7820&compId=IXTP10N60P.pdf?ci_sign=c8a5cd7138ab74dee443f89a317f173a43bfad11
IXTP10N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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В кошику  од. на суму  грн.
IXFN110N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C7EC3367918BF&compId=IXFN110N60P3.pdf?ci_sign=d0968e82a80d72ea8c08fc609d26ee5426b318be
IXFN110N60P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 254nC
Reverse recovery time: 250ns
Pulsed drain current: 275A
товару немає в наявності
В кошику  од. на суму  грн.
IXFA10N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2
IXFA10N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFB110N60P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED44AB02F76EA18&compId=IXFB110N60P3.pdf?ci_sign=0293312a91129e825963c35231f446f72a37e881
IXFB110N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 250ns
товару немає в наявності
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CPC9909NTR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a
CPC9909NTR
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
товару немає в наявності
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CPC9909N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a
CPC9909N
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+237.53 грн
5+180.10 грн
9+104.73 грн
25+99.17 грн
100+97.59 грн
300+95.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC9909NE pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a
CPC9909NE
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
на замовлення 1016 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+216.17 грн
9+105.52 грн
25+99.97 грн
50+96.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC9909NETR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
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