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MXHV9910BETR IXYS MXHV9910.pdf Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
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MXHV9910BTR MXHV9910BTR IXYS MXHV9910.pdf Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
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IXTA08N50D2 IXTA08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXTP08N50D2 IXTP08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
на замовлення 264 шт:
термін постачання 21-30 дні (днів)
2+209.30 грн
9+109.14 грн
23+103.16 грн
Мінімальне замовлення: 2
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IXTY08N50D2 IXTY08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXYH75N120B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 1.15kW
Kind of package: tube
Gate charge: 157nC
Technology: GenX4™; XPT™
Case: TO247; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Turn-on time: 24ns
Turn-off time: 235ns
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CPC2025N CPC2025N IXYS CPC2025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Turn-off time: 1ms
Turn-on time: 2ms
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Case: SO8
Insulation voltage: 1.5kV
Mounting: SMT
Kind of output: MOSFET
на замовлення 184 шт:
термін постачання 21-30 дні (днів)
3+137.66 грн
10+94.18 грн
26+88.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC2025NTR IXYS CPC2025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Turn-off time: 1ms
Turn-on time: 2ms
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Case: SO8
Insulation voltage: 1.5kV
Mounting: SMT
Kind of output: MOSFET
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IXKC15N60C5 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
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CLA100PD1200NA CLA100PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 1.5kA
Case: SOT227B
Load current: 100A
Max. forward voltage: 1.21V
Max. load current: 150A
Type of module: diode-thyristor
Threshold on-voltage: 0.83V
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Gate current: 40/80mA
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+2256.42 грн
2+1980.88 грн
В кошику  од. на суму  грн.
IXGN320N60A3 IXGN320N60A3 IXYS IXGN320N60A3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Technology: GenX3™; PT
Collector current: 170A
Power dissipation: 735W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Type of module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXA20PG1200DHGLB IXA20PG1200DHGLB IXYS IXA20PG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Electrical mounting: SMT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Type of module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Topology: IGBT half-bridge
Case: SMPD-B
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+810.64 грн
2+638.36 грн
4+603.23 грн
10+596.50 грн
В кошику  од. на суму  грн.
IXA30RG1200DHGLB IXA30RG1200DHGLB IXYS IXA30RG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
1+480.58 грн
3+426.82 грн
6+411.12 грн
10+408.14 грн
40+395.43 грн
В кошику  од. на суму  грн.
IXA40RG1200DHGLB IXA40RG1200DHGLB IXYS IXA40RG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Case: SMPD-B
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 43A
Pulsed collector current: 105A
Power dissipation: 215W
Electrical mounting: SMT
Type of module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Topology: boost chopper
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+894.36 грн
2+606.22 грн
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IXFH70N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
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IXFN170N65X2 IXFN170N65X2 IXYS IXFN170N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 270ns
Mechanical mounting: screw
Type of module: MOSFET transistor
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CPC1135N CPC1135N IXYS CPC1135N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
3+144.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1135NTR CPC1135NTR IXYS CPC1135N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
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FDA217S FDA217S IXYS FDA217.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
2+272.90 грн
3+227.99 грн
6+174.92 грн
14+165.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1968J CPC1968J IXYS CPC1968.pdf Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 5A
Switched voltage: max. 500V DC
Relay variant: Photo MOSFET
On-state resistance: 0.35Ω
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 26.2x20x5mm
Control voltage: 0.9...1.56V DC
Operate time: 4.6ms
Release time: 0.07ms
Control current: 10mA
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
1+1579.41 грн
2+843.18 грн
3+796.84 грн
В кошику  од. на суму  грн.
IXGR24N120C3D1 IXGR24N120C3D1 IXYS IXGR24N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
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IXGR55N120A3H1 IXGR55N120A3H1 IXYS IXGR55N120A3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
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IXGR6N170A IXGR6N170A IXYS IXGR6N170A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
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IXTX90N25L2 IXTX90N25L2 IXYS IXTK(X)90N25L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Case: PLUS247™
Features of semiconductor devices: linear power mosfet
Gate charge: 640nC
Kind of channel: enhancement
Reverse recovery time: 266ns
Mounting: THT
Drain-source voltage: 250V
Drain current: 90A
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IXTX90P20P IXTX90P20P IXYS IXT_90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
On-state resistance: 44mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Case: PLUS247™
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 315ns
Mounting: THT
Drain-source voltage: -200V
Drain current: -90A
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
1+1078.70 грн
3+947.08 грн
30+937.36 грн
120+910.46 грн
В кошику  од. на суму  грн.
MCD26-08IO1B MCD26-08IO1B IXYS MCD26-08io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 0.8kV
Load current: 27A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Gate current: 100/200mA
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+1438.54 грн
2+1263.28 грн
В кошику  од. на суму  грн.
MCD56-08IO1B MCD56-08IO1B IXYS MCD56-08io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 0.8kV
Load current: 60A
Max. forward impulse current: 1.5kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.24V
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Max. load current: 100A
Semiconductor structure: double series
Gate current: 100/200mA
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
1+1669.57 грн
2+1465.85 грн
В кошику  од. на суму  грн.
MCD26-12IO1B IXYS MCD26-12io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 1.2kV
Load current: 27A
Max. forward impulse current: 0.44kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Gate current: 100/200mA
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+1507.76 грн
2+1323.82 грн
В кошику  од. на суму  грн.
IXTP150N15X4 IXTP150N15X4 IXYS IXTH(P)150N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Case: TO220AB
Reverse recovery time: 100ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 105nC
Kind of channel: enhancement
Mounting: THT
на замовлення 331 шт:
термін постачання 21-30 дні (днів)
1+512.78 грн
3+379.73 грн
7+358.80 грн
50+352.82 грн
В кошику  од. на суму  грн.
IXTQ150N15P IXTQ150N15P IXYS IXTK150N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Case: TO3P
Reverse recovery time: 150ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.19µC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+452.41 грн
В кошику  од. на суму  грн.
IXTA3N150HV IXTA3N150HV IXYS IXTA3N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
на замовлення 72 шт:
термін постачання 21-30 дні (днів)
1+699.54 грн
2+523.25 грн
5+494.10 грн
50+475.41 грн
В кошику  од. на суму  грн.
IXTQ3N150M IXTQ3N150M IXYS IXTQ3N150M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
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IXFP10N60P IXFP10N60P IXYS IXFA(P)10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
2+233.45 грн
3+194.35 грн
6+154.73 грн
16+146.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP10N60P IXTP10N60P IXYS IXTP10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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IXFN110N60P3 IXFN110N60P3 IXYS IXFN110N60P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Pulsed drain current: 275A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar3™
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
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IXFA10N60P IXFA10N60P IXYS IXFA(P)10N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 120ns
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IXFB110N60P3 IXFB110N60P3 IXYS IXFB110N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
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CPC9909NTR CPC9909NTR IXYS CPC9909.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
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CPC9909N CPC9909N IXYS CPC9909.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
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CPC9909NE CPC9909NE IXYS CPC9909.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
на замовлення 1020 шт:
термін постачання 21-30 дні (днів)
2+245.52 грн
9+99.42 грн
25+94.18 грн
200+93.44 грн
300+90.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC9909NETR IXYS CPC9909.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
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IXTH30N50L2 IXTH30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Mounting: THT
Features of semiconductor devices: linear power mosfet
Kind of package: tube
Case: TO247-3
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.215Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Gate charge: 240nC
Kind of channel: enhancement
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IXTH30N50P IXTH30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXFR102N30P IXFR102N30P IXYS IXFR102N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Gate charge: 224nC
Kind of channel: enhancement
Case: ISOPLUS247™
Drain-source voltage: 300V
Drain current: 60A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+956.34 грн
3+840.19 грн
В кошику  од. на суму  грн.
IXFN44N80P IXFN44N80P IXYS IXFN44N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+2099.44 грн
2+1843.34 грн
В кошику  од. на суму  грн.
IXFN44N80Q3 IXFN44N80Q3 IXYS IXFN44N80Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Reverse recovery time: 300ns
Mechanical mounting: screw
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IXTP60N10T IXTP60N10T IXYS IXTA(P)60N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
3+185.96 грн
10+94.18 грн
26+88.95 грн
250+85.22 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFN360N10T IXFN360N10T IXYS IXFN360N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 130ns
Gate charge: 525nC
Kind of channel: enhancement
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
1+1664.74 грн
2+1462.11 грн
10+1461.36 грн
100+1456.13 грн
В кошику  од. на суму  грн.
IXFX360N10T IXFX360N10T IXYS IXFK(X)360N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Drain-source voltage: 100V
Drain current: 360A
Case: PLUS247™
Polarisation: unipolar
On-state resistance: 2.9mΩ
Power dissipation: 1.25kW
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 525nC
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
1+978.88 грн
2+648.83 грн
4+613.70 грн
В кошику  од. на суму  грн.
IXTP160N10T IXTP160N10T IXYS IXT_160N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 430W
Polarisation: unipolar
Kind of package: tube
Gate charge: 132nC
Technology: Trench™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Reverse recovery time: 60ns
Drain-source voltage: 100V
Drain current: 160A
на замовлення 273 шт:
термін постачання 21-30 дні (днів)
2+350.98 грн
5+205.56 грн
12+194.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN44N100Q3 IXFN44N100Q3 IXYS IXFN44N100Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 264nC
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+4026.61 грн
В кошику  од. на суму  грн.
DSA1-12D DSA1-12D IXYS DSA1-18D.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Case: FP-Case
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.34V
Load current: 2.3A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect
Mounting: THT
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
2+359.03 грн
4+226.49 грн
11+214.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH48N65X2 IXTH48N65X2 IXYS IXTH48N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
1+682.64 грн
2+481.39 грн
6+455.23 грн
120+437.29 грн
В кошику  од. на суму  грн.
IXFH60N65X2 IXFH60N65X2 IXYS IXFH60N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
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IXFH60N65X2-4 IXFH60N65X2-4 IXYS IXFH60N65X2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
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IXFT60N65X2HV IXFT60N65X2HV IXYS IXFT60N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+894.36 грн
2+609.96 грн
4+576.32 грн
В кошику  од. на суму  грн.
IXXH60N65B4 IXXH60N65B4 IXYS IXXH60N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 536W
Kind of package: tube
Gate charge: 86nC
Technology: GenX4™; Trench; XPT™
Mounting: THT
Case: TO247-3
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
1+513.59 грн
3+342.36 грн
8+323.67 грн
В кошику  од. на суму  грн.
IXXH60N65B4H1 IXXH60N65B4H1 IXYS IXXH60N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 536W
Kind of package: tube
Gate charge: 86nC
Technology: GenX4™; Trench; XPT™
Mounting: THT
Case: TO247-3
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
1+924.94 грн
2+619.68 грн
4+586.04 грн
В кошику  од. на суму  грн.
IXXH60N65C4 IXXH60N65C4 IXYS IXXH60N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Pulsed collector current: 260A
Collector current: 60A
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Turn-on time: 110ns
Gate-emitter voltage: ±20V
Turn-off time: 164ns
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IXXK160N65B4 IXXK160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Power dissipation: 940W
Case: TO264
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Pulsed collector current: 860A
Collector current: 160A
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Turn-on time: 93ns
Gate-emitter voltage: ±20V
Turn-off time: 380ns
на замовлення 220 шт:
термін постачання 21-30 дні (днів)
1+1280.76 грн
3+1124.99 грн
25+1114.52 грн
100+1081.63 грн
В кошику  од. на суму  грн.
MXHV9910BETR MXHV9910.pdf
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
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MXHV9910BTR MXHV9910.pdf
MXHV9910BTR
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
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IXTA08N50D2 IXTA(P,Y)08N50D2.pdf
IXTA08N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXTP08N50D2 IXTA(P,Y)08N50D2.pdf
IXTP08N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
на замовлення 264 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+209.30 грн
9+109.14 грн
23+103.16 грн
Мінімальне замовлення: 2
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IXTY08N50D2 IXTA(P,Y)08N50D2.pdf
IXTY08N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXYH75N120B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 1.15kW
Kind of package: tube
Gate charge: 157nC
Technology: GenX4™; XPT™
Case: TO247; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Turn-on time: 24ns
Turn-off time: 235ns
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CPC2025N CPC2025N.pdf
CPC2025N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Turn-off time: 1ms
Turn-on time: 2ms
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Case: SO8
Insulation voltage: 1.5kV
Mounting: SMT
Kind of output: MOSFET
на замовлення 184 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+137.66 грн
10+94.18 грн
26+88.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC2025NTR CPC2025N.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Turn-off time: 1ms
Turn-on time: 2ms
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Case: SO8
Insulation voltage: 1.5kV
Mounting: SMT
Kind of output: MOSFET
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IXKC15N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
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CLA100PD1200NA Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969
CLA100PD1200NA
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 1.5kA
Case: SOT227B
Load current: 100A
Max. forward voltage: 1.21V
Max. load current: 150A
Type of module: diode-thyristor
Threshold on-voltage: 0.83V
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Gate current: 40/80mA
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2256.42 грн
2+1980.88 грн
В кошику  од. на суму  грн.
IXGN320N60A3 IXGN320N60A3.pdf
IXGN320N60A3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Technology: GenX3™; PT
Collector current: 170A
Power dissipation: 735W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Type of module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXA20PG1200DHGLB IXA20PG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf
IXA20PG1200DHGLB
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Electrical mounting: SMT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Type of module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Topology: IGBT half-bridge
Case: SMPD-B
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+810.64 грн
2+638.36 грн
4+603.23 грн
10+596.50 грн
В кошику  од. на суму  грн.
IXA30RG1200DHGLB IXA30RG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf
IXA30RG1200DHGLB
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+480.58 грн
3+426.82 грн
6+411.12 грн
10+408.14 грн
40+395.43 грн
В кошику  од. на суму  грн.
IXA40RG1200DHGLB IXA40RG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf
IXA40RG1200DHGLB
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Case: SMPD-B
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 43A
Pulsed collector current: 105A
Power dissipation: 215W
Electrical mounting: SMT
Type of module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Topology: boost chopper
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+894.36 грн
2+606.22 грн
В кошику  од. на суму  грн.
IXFH70N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
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IXFN170N65X2 IXFN170N65X2.pdf
IXFN170N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 270ns
Mechanical mounting: screw
Type of module: MOSFET transistor
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CPC1135N CPC1135N.pdf
CPC1135N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+144.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1135NTR CPC1135N.pdf
CPC1135NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
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FDA217S FDA217.pdf
FDA217S
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+272.90 грн
3+227.99 грн
6+174.92 грн
14+165.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1968J CPC1968.pdf
CPC1968J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 5A
Switched voltage: max. 500V DC
Relay variant: Photo MOSFET
On-state resistance: 0.35Ω
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 26.2x20x5mm
Control voltage: 0.9...1.56V DC
Operate time: 4.6ms
Release time: 0.07ms
Control current: 10mA
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1579.41 грн
2+843.18 грн
3+796.84 грн
В кошику  од. на суму  грн.
IXGR24N120C3D1 IXGR24N120C3D1.pdf
IXGR24N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
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IXGR55N120A3H1 IXGR55N120A3H1.pdf
IXGR55N120A3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
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IXGR6N170A IXGR6N170A.pdf
IXGR6N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
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IXTX90N25L2 IXTK(X)90N25L2.pdf
IXTX90N25L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Case: PLUS247™
Features of semiconductor devices: linear power mosfet
Gate charge: 640nC
Kind of channel: enhancement
Reverse recovery time: 266ns
Mounting: THT
Drain-source voltage: 250V
Drain current: 90A
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IXTX90P20P IXT_90P20P.pdf
IXTX90P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
On-state resistance: 44mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Case: PLUS247™
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 315ns
Mounting: THT
Drain-source voltage: -200V
Drain current: -90A
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1078.70 грн
3+947.08 грн
30+937.36 грн
120+910.46 грн
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MCD26-08IO1B MCD26-08io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCD26-08IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 0.8kV
Load current: 27A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Gate current: 100/200mA
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1438.54 грн
2+1263.28 грн
В кошику  од. на суму  грн.
MCD56-08IO1B MCD56-08io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD56-08IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 0.8kV
Load current: 60A
Max. forward impulse current: 1.5kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.24V
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Max. load current: 100A
Semiconductor structure: double series
Gate current: 100/200mA
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1669.57 грн
2+1465.85 грн
В кошику  од. на суму  грн.
MCD26-12IO1B MCD26-12io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 1.2kV
Load current: 27A
Max. forward impulse current: 0.44kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Gate current: 100/200mA
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1507.76 грн
2+1323.82 грн
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IXTP150N15X4 IXTH(P)150N15X4.pdf
IXTP150N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Case: TO220AB
Reverse recovery time: 100ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 105nC
Kind of channel: enhancement
Mounting: THT
на замовлення 331 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+512.78 грн
3+379.73 грн
7+358.80 грн
50+352.82 грн
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IXTQ150N15P IXTK150N15P-DTE.pdf
IXTQ150N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Case: TO3P
Reverse recovery time: 150ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.19µC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+452.41 грн
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IXTA3N150HV IXTA3N150HV.pdf
IXTA3N150HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
на замовлення 72 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+699.54 грн
2+523.25 грн
5+494.10 грн
50+475.41 грн
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IXTQ3N150M IXTQ3N150M.pdf
IXTQ3N150M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
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IXFP10N60P IXFA(P)10N60P.pdf
IXFP10N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+233.45 грн
3+194.35 грн
6+154.73 грн
16+146.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP10N60P IXTP10N60P.pdf
IXTP10N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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IXFN110N60P3 IXFN110N60P3.pdf
IXFN110N60P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Pulsed drain current: 275A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar3™
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
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IXFA10N60P IXFA(P)10N60P.pdf
IXFA10N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 120ns
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IXFB110N60P3 IXFB110N60P3.pdf
IXFB110N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
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CPC9909NTR CPC9909.pdf
CPC9909NTR
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
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CPC9909N CPC9909.pdf
CPC9909N
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
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CPC9909NE CPC9909.pdf
CPC9909NE
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
на замовлення 1020 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+245.52 грн
9+99.42 грн
25+94.18 грн
200+93.44 грн
300+90.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC9909NETR CPC9909.pdf
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
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В кошику  од. на суму  грн.
IXTH30N50L2 IXTH(Q,T)30N50L2.pdf
IXTH30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Mounting: THT
Features of semiconductor devices: linear power mosfet
Kind of package: tube
Case: TO247-3
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.215Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Gate charge: 240nC
Kind of channel: enhancement
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IXTH30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTH30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXFR102N30P IXFR102N30P.pdf
IXFR102N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Gate charge: 224nC
Kind of channel: enhancement
Case: ISOPLUS247™
Drain-source voltage: 300V
Drain current: 60A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+956.34 грн
3+840.19 грн
В кошику  од. на суму  грн.
IXFN44N80P description IXFN44N80P.pdf
IXFN44N80P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2099.44 грн
2+1843.34 грн
В кошику  од. на суму  грн.
IXFN44N80Q3 IXFN44N80Q3.pdf
IXFN44N80Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Reverse recovery time: 300ns
Mechanical mounting: screw
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IXTP60N10T IXTA(P)60N10T.pdf
IXTP60N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+185.96 грн
10+94.18 грн
26+88.95 грн
250+85.22 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFN360N10T IXFN360N10T.pdf
IXFN360N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 130ns
Gate charge: 525nC
Kind of channel: enhancement
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1664.74 грн
2+1462.11 грн
10+1461.36 грн
100+1456.13 грн
В кошику  од. на суму  грн.
IXFX360N10T IXFK(X)360N10T.pdf
IXFX360N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Drain-source voltage: 100V
Drain current: 360A
Case: PLUS247™
Polarisation: unipolar
On-state resistance: 2.9mΩ
Power dissipation: 1.25kW
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 525nC
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+978.88 грн
2+648.83 грн
4+613.70 грн
В кошику  од. на суму  грн.
IXTP160N10T IXT_160N10T.pdf
IXTP160N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 430W
Polarisation: unipolar
Kind of package: tube
Gate charge: 132nC
Technology: Trench™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Reverse recovery time: 60ns
Drain-source voltage: 100V
Drain current: 160A
на замовлення 273 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+350.98 грн
5+205.56 грн
12+194.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN44N100Q3 IXFN44N100Q3.pdf
IXFN44N100Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 264nC
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4026.61 грн
В кошику  од. на суму  грн.
DSA1-12D DSA1-18D.pdf
DSA1-12D
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Case: FP-Case
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.34V
Load current: 2.3A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect
Mounting: THT
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+359.03 грн
4+226.49 грн
11+214.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH48N65X2 IXTH48N65X2.pdf
IXTH48N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+682.64 грн
2+481.39 грн
6+455.23 грн
120+437.29 грн
В кошику  од. на суму  грн.
IXFH60N65X2 IXFH60N65X2.pdf
IXFH60N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
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IXFH60N65X2-4 IXFH60N65X2-4.pdf
IXFH60N65X2-4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
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IXFT60N65X2HV IXFT60N65X2HV.pdf
IXFT60N65X2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+894.36 грн
2+609.96 грн
4+576.32 грн
В кошику  од. на суму  грн.
IXXH60N65B4 IXXH60N65B4.pdf
IXXH60N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 536W
Kind of package: tube
Gate charge: 86nC
Technology: GenX4™; Trench; XPT™
Mounting: THT
Case: TO247-3
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+513.59 грн
3+342.36 грн
8+323.67 грн
В кошику  од. на суму  грн.
IXXH60N65B4H1 IXXH60N65B4H1.pdf
IXXH60N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 536W
Kind of package: tube
Gate charge: 86nC
Technology: GenX4™; Trench; XPT™
Mounting: THT
Case: TO247-3
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+924.94 грн
2+619.68 грн
4+586.04 грн
В кошику  од. на суму  грн.
IXXH60N65C4 IXXH60N65C4.pdf
IXXH60N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Pulsed collector current: 260A
Collector current: 60A
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Turn-on time: 110ns
Gate-emitter voltage: ±20V
Turn-off time: 164ns
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IXXK160N65B4 IXXK(x)160N65B4.pdf
IXXK160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Power dissipation: 940W
Case: TO264
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Pulsed collector current: 860A
Collector current: 160A
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Turn-on time: 93ns
Gate-emitter voltage: ±20V
Turn-off time: 380ns
на замовлення 220 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1280.76 грн
3+1124.99 грн
25+1114.52 грн
100+1081.63 грн
В кошику  од. на суму  грн.
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