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IXFA44N25X3 IXYS media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Pulsed drain current: 66A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: HiPerFET™; X3-Class
Case: TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 33nC
Reverse recovery time: 87ns
On-state resistance: 40mΩ
Drain current: 44A
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CPC1020N CPC1020N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99590BA41559518BF&compId=cpc1020n.pdf?ci_sign=37cea23d8865e0c6606264b79492a3b1daaee7e7 Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 0.25Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 3ms
Kind of output: MOSFET
на замовлення 454 шт:
термін постачання 21-30 дні (днів)
2+381.92 грн
6+164.23 грн
16+155.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA50E1200HB CLA50E1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFAFA56CE8F820&compId=CLA50E1200HB.pdf?ci_sign=83f85c6f2d1e7687021f6e862bc4e05d0cb2ca56 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
на замовлення 212 шт:
термін постачання 21-30 дні (днів)
1+431.48 грн
2+362.58 грн
4+284.03 грн
10+268.16 грн
16+259.44 грн
30+257.85 грн
В кошику  од. на суму  грн.
MCD162-16io1 MCD162-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FD6136CB9ABE143&compId=MCD162-16io1.pdf?ci_sign=0059e08e7eeb598895d2ad74edff6b821249c3b5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
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CPC1001N CPC1001N IXYS 1 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4
Type of optocoupler: optocoupler
Insulation voltage: 1.5kV
Kind of output: transistor
Case: SOP4
Mounting: SMD
Number of channels: 1
CTR@If: 100-800%@0.2mA
Turn-on time: 1µs
Turn-off time: 30µs
на замовлення 174 шт:
термін постачання 21-30 дні (днів)
5+105.95 грн
10+71.40 грн
19+49.98 грн
52+46.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CPC1002N CPC1002N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995903E8B381558BF&compId=cpc1002n.pdf?ci_sign=59ca255b0e06b398b1d01aad9a01ac20bcce44dc Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Case: SOP4
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Max. operating current: 700mA
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
на замовлення 1710 шт:
термін постачання 21-30 дні (днів)
3+163.19 грн
14+69.82 грн
37+66.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1002NTR CPC1002NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4918F5537E0C7&compId=CPC1002N.pdf?ci_sign=09d4db40bee1ae8a6b564a28716e29f2c573c468 Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Case: SOP4
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Max. operating current: 700mA
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
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CPC1006N CPC1006N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42A60C7&compId=CPC1006N.pdf?ci_sign=72d41b7324042777116a851719d9e0f28d3ef419 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 10ms
On-state resistance: 10Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 10ms
Kind of output: MOSFET
на замовлення 2557 шт:
термін постачання 21-30 дні (днів)
5+90.57 грн
10+76.96 грн
13+75.37 грн
25+73.78 грн
35+71.40 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CPC1009N CPC1009N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75020C7&compId=CPC1009N.pdf?ci_sign=f40f58f0e387932488df77283d620ba8e67b04b1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 0.5ms
On-state resistance: 8Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 2ms
Kind of output: MOSFET
на замовлення 118 шт:
термін постачання 21-30 дні (днів)
5+93.13 грн
10+80.13 грн
12+78.54 грн
25+72.99 грн
50+71.40 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXKR47N60C5 IXKR47N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC791820&compId=IXKR47N60C5.pdf?ci_sign=4b58b847ed569ac779f2a40e73cfe499f7be0fab Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+1374.75 грн
3+1206.73 грн
В кошику  од. на суму  грн.
DSSK16-01AS DSSK16-01AS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB5685A43C78BF&compId=DSSK16-01A.pdf?ci_sign=35827b5f37f5a6cfb99fe5eba93b91f91214ea59 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8Ax2; reel,tape; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 90W
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DSSK16-01A DSSK16-01A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB5685A43C78BF&compId=DSSK16-01A.pdf?ci_sign=35827b5f37f5a6cfb99fe5eba93b91f91214ea59 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
4+99.17 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDN75N120 IXDN75N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9888FC4531A0538BF&compId=IXDN75N120.pdf?ci_sign=06ae6ac4014868b47b0ab2941b0edc4f457b8058 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Technology: NPT
Collector current: 150A
Power dissipation: 660W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Type of semiconductor module: IGBT
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IXKC19N60C5 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 430ns
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IXGA20N120A3 IXGA20N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-off time: 1.53µs
Turn-on time: 66ns
Technology: GenX3™; PT
на замовлення 600 шт:
термін постачання 21-30 дні (днів)
1+622.01 грн
3+334.81 грн
8+316.56 грн
100+304.66 грн
В кошику  од. на суму  грн.
IXGA20N120B3 IXGA20N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO263
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Turn-on time: 61ns
Turn-off time: 720ns
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IXFQ140N20X3 IXFQ140N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
1+835.61 грн
2+621.22 грн
3+620.42 грн
5+587.10 грн
30+576.00 грн
В кошику  од. на суму  грн.
IXFH22N65X2 IXFH22N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
1+457.11 грн
4+287.20 грн
9+271.34 грн
30+264.20 грн
120+261.02 грн
В кошику  од. на суму  грн.
IXFP22N65X2 IXFP22N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
2+375.94 грн
4+242.78 грн
11+229.29 грн
50+226.11 грн
100+220.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP22N65X2M IXFP22N65X2M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB2D04AD8BB8BF&compId=IXFP22N65X2M.pdf?ci_sign=641ab7467b1b0dee58df8d256bcf0bafa48e6d62 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
на замовлення 263 шт:
термін постачання 21-30 дні (днів)
2+349.45 грн
5+200.73 грн
13+189.62 грн
50+184.06 грн
100+182.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGR48N60C3D1 IXGR48N60C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF24C2C638B15EA&compId=IXGR48N60C3D1.pdf?ci_sign=e17ec10a0f325c156db32ed2b069899ee73c8d00 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 125W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector current: 26A
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Collector-emitter voltage: 600V
Turn-off time: 187ns
Turn-on time: 45ns
на замовлення 328 шт:
термін постачання 21-30 дні (днів)
1+1230.35 грн
2+874.31 грн
3+825.91 грн
В кошику  од. на суму  грн.
IXXH40N65B4 IXXH40N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA96CA2990ED820&compId=IXXH40N65B4.pdf?ci_sign=770ad629ceb326de1e544cb3d65c8b03a36c72c3 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Gate charge: 66nC
Turn-on time: 67ns
Turn-off time: 252ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 225A
Power dissipation: 455W
Collector-emitter voltage: 650V
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
1+434.90 грн
3+363.37 грн
4+289.58 грн
9+273.72 грн
В кошику  од. на суму  грн.
IXXH40N65B4D1 IXXH40N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA96F577F355820&compId=IXXH40N65B4D1.pdf?ci_sign=4b16939ad77a5f052b6f636ad7b9f86dea9dc600 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
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IXXH40N65B4H1 IXXH40N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA97219726AF820&compId=IXXH40N65B4H1.pdf?ci_sign=1e60654719d923f15b053b37a83badb0a07ba890 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXXH40N65C4D1 IXXH40N65C4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE5897875C79820&compId=IXXH40N65C4D1.pdf?ci_sign=e5472dd029b3deb15e95cd70a2d8eee474e6704d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXFA16N60P3 IXFA16N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
3+174.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFP16N60P3 IXFP16N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 267 шт:
термін постачання 21-30 дні (днів)
1+473.34 грн
5+224.53 грн
12+212.63 грн
В кошику  од. на суму  грн.
IXFP76N15T2 IXFP76N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D41BF38A751820&compId=IXFA(H%2CP)76N15T2.pdf?ci_sign=e58b954c14aed23e6b59d6e696317db032e28994 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO220AB; 69ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 350W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 150V
Drain current: 76A
Reverse recovery time: 69ns
Gate charge: 97nC
On-state resistance: 22mΩ
на замовлення 281 шт:
термін постачання 21-30 дні (днів)
2+344.33 грн
5+219.77 грн
12+207.87 грн
250+200.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDH20N120 IXDH20N120 IXYS pVersion=0046&contRep=ZT&docId=E29206428EEA27F19A99005056AB752F&compId=IXDH20N120_IXDH20N120D1.pdf?ci_sign=868beffbdc782c683957f60a286ccc2aecbc511a Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Collector-emitter voltage: 1.2kV
Turn-on time: 175ns
Turn-off time: 570ns
на замовлення 207 шт:
термін постачання 21-30 дні (днів)
1+508.38 грн
3+337.98 грн
8+319.73 грн
В кошику  од. на суму  грн.
IXFK20N120P IXFK20N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 193nC
On-state resistance: 570mΩ
Drain current: 20A
Drain-source voltage: 1.2kV
Power dissipation: 780W
товару немає в наявності
В кошику  од. на суму  грн.
IXFN20N120P IXFN20N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA8222A1DEF7820&compId=IXFN20N120P.pdf?ci_sign=d60c32441418226b7bbccc61b6c8e84fb8b4f901 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 193nC
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+1182.51 грн
3+1055.99 грн
В кошику  од. на суму  грн.
IXFR20N120P IXFR20N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B4B820&compId=IXFR20N120P.pdf?ci_sign=3ec4bae68a596108eefc3f91613f3b2a858b33a0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1705.41 грн
2+1497.11 грн
30+1447.13 грн
В кошику  од. на суму  грн.
IXFX20N120P IXFX20N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1602.02 грн
В кошику  од. на суму  грн.
IXGH20N120A3 IXGH20N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
1+673.28 грн
3+348.29 грн
8+329.25 грн
В кошику  од. на суму  грн.
IXGP20N120A3 IXGP20N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Turn-on time: 66ns
Gate charge: 50nC
Turn-off time: 1.53µs
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+600.65 грн
4+269.75 грн
10+255.47 грн
В кошику  од. на суму  грн.
IXGP20N120B3 IXGP20N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Turn-on time: 61ns
Gate charge: 51nC
Turn-off time: 720ns
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
1+590.40 грн
4+269.75 грн
10+255.47 грн
В кошику  од. на суму  грн.
IXYA20N120C3HV IXYA20N120C3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA262386AE78BF&compId=IXY_20N120C3_HV.pdf?ci_sign=69a66f2254c263ce93b6ce37d84ed69d8c442da0 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 278W
Case: TO263-2
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 215ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYH20N120C3 IXYH20N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
товару немає в наявності
В кошику  од. на суму  грн.
IXYH20N120C3D1 IXYH20N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9991A201638BF&compId=IXYH20N120C3D1.pdf?ci_sign=e120799112c6baf937977feba949005fd83421df Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
на замовлення 266 шт:
термін постачання 21-30 дні (днів)
1+691.22 грн
2+595.04 грн
5+562.51 грн
30+556.16 грн
120+541.09 грн
В кошику  од. на суму  грн.
IXYJ20N120C3D1 IXYS IXYJ20N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 105W
Case: TO247
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 20ns
Turn-off time: 90ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYP20N120C3 IXYP20N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Gate charge: 53nC
Turn-off time: 200ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYT20N120C3D1HV IXYT20N120C3D1HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5027B64E7820&compId=IXYT20N120C3D1HV.pdf?ci_sign=919d7cd0b29220ac3b93c7617f2b3fdc9d073e25 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO268HV
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Collector current: 17A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
товару немає в наявності
В кошику  од. на суму  грн.
CPC1390GR CPC1390GR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A41EA29340F8BF&compId=cpc1390.pdf?ci_sign=4ed09f212104e2f97cb38f2c56316cc428366b9d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 1ms
On-state resistance: 22Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 1ms
Kind of output: MOSFET
на замовлення 235 шт:
термін постачання 21-30 дні (днів)
2+225.56 грн
9+110.28 грн
24+103.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1390GV CPC1390GV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320042C0C7&compId=CPC1390.pdf?ci_sign=02d27267f722e98ae1add0787a699a87ad053c38 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 1ms
On-state resistance: 22Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 1ms
Kind of output: MOSFET
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
2+214.46 грн
9+113.45 грн
23+107.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH34N60X2A IXFH34N60X2A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2850059F7229820&compId=IXFH34N60X2A.pdf?ci_sign=670b82a0339a408baa8b89dce5ae98931a570f1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+511.79 грн
В кошику  од. на суму  грн.
IXFK64N60Q3 IXFK64N60Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D463260E2E9820&compId=IXFK(X)64N60Q3.pdf?ci_sign=2b8a7c779d19716f7657570711d367d2c1aaefc9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+968.90 грн
В кошику  од. на суму  грн.
IXTP14N60X2 IXTP14N60X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+427.21 грн
5+221.35 грн
12+209.45 грн
В кошику  од. на суму  грн.
IXXH30N60B3D1 IXXH30N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0EF4E1770591E27&compId=IXXH30N60B3D1-DTE.pdf?ci_sign=75d2af8a37123feddd1d882cb6506af0f88f6182 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Case: TO247AD
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 115A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 23ns
Gate charge: 39nC
Turn-off time: 125ns
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
1+463.09 грн
3+425.25 грн
5+401.45 грн
10+396.69 грн
В кошику  од. на суму  грн.
IXXN110N65B4H1 IXXN110N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3014ED0C9B820&compId=IXXN110N65B4H1.pdf?ci_sign=b28fc3aed32959875df04b4bf39ca4ce608cbe7c Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXXN110N65C4H1 IXXN110N65C4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F30564423ED820&compId=IXXN110N65C4H1.pdf?ci_sign=c9eb661bdd50eec71321e7879af73afec49776cd Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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IXXR110N65B4H1 IXXR110N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA2540B7AF3820&compId=IXXR110N65B4H1.pdf?ci_sign=5890856bd86011b903242c6fef3c7868545f561d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
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IXXX110N65B4H1 IXXX110N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992DF299313CAB8BF&compId=IXX_110N65B4H1.pdf?ci_sign=138ddc32a5ddfa541fc19fa01c5429737b49acfd Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
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IXTH30N60P IXTH30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
на замовлення 279 шт:
термін постачання 21-30 дні (днів)
1+767.26 грн
2+521.25 грн
3+520.46 грн
5+492.69 грн
В кошику  од. на суму  грн.
IXTQ30N60L2 IXTQ30N60L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
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IXTQ30N60P IXTQ30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXTT30N60L2 IXTT30N60L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
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IXTT30N60P IXTT30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXXH30N60C3D1 IXXH30N60C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA0640C0AE3820&compId=IXXH30N60C3D1.pdf?ci_sign=acb988c96b71486701945515382354c24866b822 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
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IXXQ30N60B3M IXXQ30N60B3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7ECB7A14AD820&compId=IXXQ30N60B3M.pdf?ci_sign=a883fe68cd02608d671c8106875dd32cd7167cad Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
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IXFX55N50 IXFX55N50 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A95C294BFDB8BF&compId=IXFX50N50_IXFX55N50.pdf?ci_sign=9823f069cf4013329e963cbfdae0e3ff065e6ff0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFA44N25X3 media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Pulsed drain current: 66A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: HiPerFET™; X3-Class
Case: TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 33nC
Reverse recovery time: 87ns
On-state resistance: 40mΩ
Drain current: 44A
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CPC1020N pVersion=0046&contRep=ZT&docId=005056AB82531EE99590BA41559518BF&compId=cpc1020n.pdf?ci_sign=37cea23d8865e0c6606264b79492a3b1daaee7e7
CPC1020N
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 0.25Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 3ms
Kind of output: MOSFET
на замовлення 454 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+381.92 грн
6+164.23 грн
16+155.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA50E1200HB pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFAFA56CE8F820&compId=CLA50E1200HB.pdf?ci_sign=83f85c6f2d1e7687021f6e862bc4e05d0cb2ca56
CLA50E1200HB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
на замовлення 212 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+431.48 грн
2+362.58 грн
4+284.03 грн
10+268.16 грн
16+259.44 грн
30+257.85 грн
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MCD162-16io1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FD6136CB9ABE143&compId=MCD162-16io1.pdf?ci_sign=0059e08e7eeb598895d2ad74edff6b821249c3b5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCD162-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
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CPC1001N 1
CPC1001N
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4
Type of optocoupler: optocoupler
Insulation voltage: 1.5kV
Kind of output: transistor
Case: SOP4
Mounting: SMD
Number of channels: 1
CTR@If: 100-800%@0.2mA
Turn-on time: 1µs
Turn-off time: 30µs
на замовлення 174 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+105.95 грн
10+71.40 грн
19+49.98 грн
52+46.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CPC1002N pVersion=0046&contRep=ZT&docId=005056AB82531EE995903E8B381558BF&compId=cpc1002n.pdf?ci_sign=59ca255b0e06b398b1d01aad9a01ac20bcce44dc
CPC1002N
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Case: SOP4
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Max. operating current: 700mA
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
на замовлення 1710 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+163.19 грн
14+69.82 грн
37+66.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1002NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4918F5537E0C7&compId=CPC1002N.pdf?ci_sign=09d4db40bee1ae8a6b564a28716e29f2c573c468
CPC1002NTR
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Case: SOP4
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Max. operating current: 700mA
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
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CPC1006N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42A60C7&compId=CPC1006N.pdf?ci_sign=72d41b7324042777116a851719d9e0f28d3ef419
CPC1006N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 10ms
On-state resistance: 10Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 10ms
Kind of output: MOSFET
на замовлення 2557 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+90.57 грн
10+76.96 грн
13+75.37 грн
25+73.78 грн
35+71.40 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CPC1009N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75020C7&compId=CPC1009N.pdf?ci_sign=f40f58f0e387932488df77283d620ba8e67b04b1
CPC1009N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 0.5ms
On-state resistance: 8Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 2ms
Kind of output: MOSFET
на замовлення 118 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+93.13 грн
10+80.13 грн
12+78.54 грн
25+72.99 грн
50+71.40 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXKR47N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC791820&compId=IXKR47N60C5.pdf?ci_sign=4b58b847ed569ac779f2a40e73cfe499f7be0fab
IXKR47N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1374.75 грн
3+1206.73 грн
В кошику  од. на суму  грн.
DSSK16-01AS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB5685A43C78BF&compId=DSSK16-01A.pdf?ci_sign=35827b5f37f5a6cfb99fe5eba93b91f91214ea59
DSSK16-01AS
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8Ax2; reel,tape; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 90W
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DSSK16-01A pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB5685A43C78BF&compId=DSSK16-01A.pdf?ci_sign=35827b5f37f5a6cfb99fe5eba93b91f91214ea59
DSSK16-01A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+99.17 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDN75N120 pVersion=0046&contRep=ZT&docId=005056AB82531EE9888FC4531A0538BF&compId=IXDN75N120.pdf?ci_sign=06ae6ac4014868b47b0ab2941b0edc4f457b8058
IXDN75N120
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Technology: NPT
Collector current: 150A
Power dissipation: 660W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Type of semiconductor module: IGBT
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IXKC19N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 430ns
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В кошику  од. на суму  грн.
IXGA20N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364
IXGA20N120A3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-off time: 1.53µs
Turn-on time: 66ns
Technology: GenX3™; PT
на замовлення 600 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+622.01 грн
3+334.81 грн
8+316.56 грн
100+304.66 грн
В кошику  од. на суму  грн.
IXGA20N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f
IXGA20N120B3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO263
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Turn-on time: 61ns
Turn-off time: 720ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFQ140N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFQ140N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+835.61 грн
2+621.22 грн
3+620.42 грн
5+587.10 грн
30+576.00 грн
В кошику  од. на суму  грн.
IXFH22N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a
IXFH22N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+457.11 грн
4+287.20 грн
9+271.34 грн
30+264.20 грн
120+261.02 грн
В кошику  од. на суму  грн.
IXFP22N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a
IXFP22N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+375.94 грн
4+242.78 грн
11+229.29 грн
50+226.11 грн
100+220.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP22N65X2M pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB2D04AD8BB8BF&compId=IXFP22N65X2M.pdf?ci_sign=641ab7467b1b0dee58df8d256bcf0bafa48e6d62
IXFP22N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
на замовлення 263 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+349.45 грн
5+200.73 грн
13+189.62 грн
50+184.06 грн
100+182.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGR48N60C3D1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF24C2C638B15EA&compId=IXGR48N60C3D1.pdf?ci_sign=e17ec10a0f325c156db32ed2b069899ee73c8d00
IXGR48N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 125W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector current: 26A
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Collector-emitter voltage: 600V
Turn-off time: 187ns
Turn-on time: 45ns
на замовлення 328 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1230.35 грн
2+874.31 грн
3+825.91 грн
В кошику  од. на суму  грн.
IXXH40N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA96CA2990ED820&compId=IXXH40N65B4.pdf?ci_sign=770ad629ceb326de1e544cb3d65c8b03a36c72c3
IXXH40N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Gate charge: 66nC
Turn-on time: 67ns
Turn-off time: 252ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 225A
Power dissipation: 455W
Collector-emitter voltage: 650V
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+434.90 грн
3+363.37 грн
4+289.58 грн
9+273.72 грн
В кошику  од. на суму  грн.
IXXH40N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA96F577F355820&compId=IXXH40N65B4D1.pdf?ci_sign=4b16939ad77a5f052b6f636ad7b9f86dea9dc600
IXXH40N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXXH40N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA97219726AF820&compId=IXXH40N65B4H1.pdf?ci_sign=1e60654719d923f15b053b37a83badb0a07ba890
IXXH40N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXXH40N65C4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE5897875C79820&compId=IXXH40N65C4D1.pdf?ci_sign=e5472dd029b3deb15e95cd70a2d8eee474e6704d
IXXH40N65C4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXFA16N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162
IXFA16N60P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+174.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFP16N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162
IXFP16N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 267 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+473.34 грн
5+224.53 грн
12+212.63 грн
В кошику  од. на суму  грн.
IXFP76N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D41BF38A751820&compId=IXFA(H%2CP)76N15T2.pdf?ci_sign=e58b954c14aed23e6b59d6e696317db032e28994
IXFP76N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO220AB; 69ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 350W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 150V
Drain current: 76A
Reverse recovery time: 69ns
Gate charge: 97nC
On-state resistance: 22mΩ
на замовлення 281 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+344.33 грн
5+219.77 грн
12+207.87 грн
250+200.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDH20N120 pVersion=0046&contRep=ZT&docId=E29206428EEA27F19A99005056AB752F&compId=IXDH20N120_IXDH20N120D1.pdf?ci_sign=868beffbdc782c683957f60a286ccc2aecbc511a
IXDH20N120
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Collector-emitter voltage: 1.2kV
Turn-on time: 175ns
Turn-off time: 570ns
на замовлення 207 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+508.38 грн
3+337.98 грн
8+319.73 грн
В кошику  од. на суму  грн.
IXFK20N120P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba
IXFK20N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 193nC
On-state resistance: 570mΩ
Drain current: 20A
Drain-source voltage: 1.2kV
Power dissipation: 780W
товару немає в наявності
В кошику  од. на суму  грн.
IXFN20N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA8222A1DEF7820&compId=IXFN20N120P.pdf?ci_sign=d60c32441418226b7bbccc61b6c8e84fb8b4f901
IXFN20N120P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 193nC
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1182.51 грн
3+1055.99 грн
В кошику  од. на суму  грн.
IXFR20N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B4B820&compId=IXFR20N120P.pdf?ci_sign=3ec4bae68a596108eefc3f91613f3b2a858b33a0
IXFR20N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1705.41 грн
2+1497.11 грн
30+1447.13 грн
В кошику  од. на суму  грн.
IXFX20N120P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba
IXFX20N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1602.02 грн
В кошику  од. на суму  грн.
IXGH20N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364
IXGH20N120A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+673.28 грн
3+348.29 грн
8+329.25 грн
В кошику  од. на суму  грн.
IXGP20N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364
IXGP20N120A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Turn-on time: 66ns
Gate charge: 50nC
Turn-off time: 1.53µs
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+600.65 грн
4+269.75 грн
10+255.47 грн
В кошику  од. на суму  грн.
IXGP20N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f
IXGP20N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Turn-on time: 61ns
Gate charge: 51nC
Turn-off time: 720ns
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+590.40 грн
4+269.75 грн
10+255.47 грн
В кошику  од. на суму  грн.
IXYA20N120C3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA262386AE78BF&compId=IXY_20N120C3_HV.pdf?ci_sign=69a66f2254c263ce93b6ce37d84ed69d8c442da0
IXYA20N120C3HV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 278W
Case: TO263-2
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 215ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYH20N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce
IXYH20N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
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IXYH20N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9991A201638BF&compId=IXYH20N120C3D1.pdf?ci_sign=e120799112c6baf937977feba949005fd83421df
IXYH20N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
на замовлення 266 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+691.22 грн
2+595.04 грн
5+562.51 грн
30+556.16 грн
120+541.09 грн
В кошику  од. на суму  грн.
IXYJ20N120C3D1 IXYJ20N120C3D1.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 105W
Case: TO247
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 20ns
Turn-off time: 90ns
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IXYP20N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce
IXYP20N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Gate charge: 53nC
Turn-off time: 200ns
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IXYT20N120C3D1HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5027B64E7820&compId=IXYT20N120C3D1HV.pdf?ci_sign=919d7cd0b29220ac3b93c7617f2b3fdc9d073e25
IXYT20N120C3D1HV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO268HV
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Collector current: 17A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
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CPC1390GR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A41EA29340F8BF&compId=cpc1390.pdf?ci_sign=4ed09f212104e2f97cb38f2c56316cc428366b9d
CPC1390GR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 1ms
On-state resistance: 22Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 1ms
Kind of output: MOSFET
на замовлення 235 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+225.56 грн
9+110.28 грн
24+103.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1390GV pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320042C0C7&compId=CPC1390.pdf?ci_sign=02d27267f722e98ae1add0787a699a87ad053c38
CPC1390GV
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 1ms
On-state resistance: 22Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 1ms
Kind of output: MOSFET
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+214.46 грн
9+113.45 грн
23+107.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH34N60X2A pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2850059F7229820&compId=IXFH34N60X2A.pdf?ci_sign=670b82a0339a408baa8b89dce5ae98931a570f1b
IXFH34N60X2A
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+511.79 грн
В кошику  од. на суму  грн.
IXFK64N60Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D463260E2E9820&compId=IXFK(X)64N60Q3.pdf?ci_sign=2b8a7c779d19716f7657570711d367d2c1aaefc9
IXFK64N60Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+968.90 грн
В кошику  од. на суму  грн.
IXTP14N60X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP14N60X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+427.21 грн
5+221.35 грн
12+209.45 грн
В кошику  од. на суму  грн.
IXXH30N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0EF4E1770591E27&compId=IXXH30N60B3D1-DTE.pdf?ci_sign=75d2af8a37123feddd1d882cb6506af0f88f6182
IXXH30N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Case: TO247AD
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 115A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 23ns
Gate charge: 39nC
Turn-off time: 125ns
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+463.09 грн
3+425.25 грн
5+401.45 грн
10+396.69 грн
В кошику  од. на суму  грн.
IXXN110N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3014ED0C9B820&compId=IXXN110N65B4H1.pdf?ci_sign=b28fc3aed32959875df04b4bf39ca4ce608cbe7c
IXXN110N65B4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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IXXN110N65C4H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F30564423ED820&compId=IXXN110N65C4H1.pdf?ci_sign=c9eb661bdd50eec71321e7879af73afec49776cd
IXXN110N65C4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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В кошику  од. на суму  грн.
IXXR110N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA2540B7AF3820&compId=IXXR110N65B4H1.pdf?ci_sign=5890856bd86011b903242c6fef3c7868545f561d
IXXR110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
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IXXX110N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992DF299313CAB8BF&compId=IXX_110N65B4H1.pdf?ci_sign=138ddc32a5ddfa541fc19fa01c5429737b49acfd
IXXX110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
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IXTH30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206
IXTH30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
на замовлення 279 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+767.26 грн
2+521.25 грн
3+520.46 грн
5+492.69 грн
В кошику  од. на суму  грн.
IXTQ30N60L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0
IXTQ30N60L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
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IXTQ30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206
IXTQ30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
товару немає в наявності
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IXTT30N60L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0
IXTT30N60L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDC0F215143820&compId=IXTH(Q%2CT%2CV)30N60P_S.pdf?ci_sign=23cb872edd8c988b4691a847d6364d4ee8eca206
IXTT30N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXXH30N60C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA0640C0AE3820&compId=IXXH30N60C3D1.pdf?ci_sign=acb988c96b71486701945515382354c24866b822
IXXH30N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
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IXXQ30N60B3M pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7ECB7A14AD820&compId=IXXQ30N60B3M.pdf?ci_sign=a883fe68cd02608d671c8106875dd32cd7167cad
IXXQ30N60B3M
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
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IXFX55N50 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A95C294BFDB8BF&compId=IXFX50N50_IXFX55N50.pdf?ci_sign=9823f069cf4013329e963cbfdae0e3ff065e6ff0
IXFX55N50
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
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