Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102266) > Сторінка 731 з 1705
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
BU1AUA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4840 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU1BTD2WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4975 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU1BUA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4940 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU1CUA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4965 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU22UA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4935 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU23UA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4817 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU27UA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4875 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU28UA3WNVX-TL | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU29UA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU2ATD2WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 350 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU2AUA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4996 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU2HTD2WNVX-TL | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU2HUA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4950 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU2JTD2WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4403 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU2JUA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4795 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU2KUA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU31UA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU32UA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU34TD2WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU34UA3WNVX-TL | Rohm Semiconductor |
![]() |
на замовлення 4912 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU7421SG-TR | Rohm Semiconductor |
![]() |
на замовлення 17980 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
BZ6A1206GMP-TR | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BZ6A1806GMP-TR | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
BD15IC0MEFJ-ME2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 0.25 mA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.5V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.9V @ 1A Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
ML610Q793-N01HBZ03B | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-UFBGA, WLCSP Mounting Type: Surface Mount Speed: 4.096MHz Program Memory Size: 64KB (32K x 16) RAM Size: 4K x 8 Operating Temperature: -30°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: nX-U8/100 Data Converters: A/D 3x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V Connectivity: I2C, SPI, UART/USART Peripherals: POR, WDT Supplier Device Package: 48-WLCSP (3.06x2.96) Number of I/O: 21 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
ML610Q793-SDK | Rohm Semiconductor |
![]() |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
ML610Q793-N01HBZ03B | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 48-UFBGA, WLCSP Mounting Type: Surface Mount Speed: 4.096MHz Program Memory Size: 64KB (32K x 16) RAM Size: 4K x 8 Operating Temperature: -30°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: nX-U8/100 Data Converters: A/D 3x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V Connectivity: I2C, SPI, UART/USART Peripherals: POR, WDT Supplier Device Package: 48-WLCSP (3.06x2.96) Number of I/O: 21 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
2SA1774EBTLP | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: EMT3F (SOT-416FL) Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
CDZT2RA8.2B | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
RDD022N50TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 5.4Ohm @ 1A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
RDD022N60TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 6.7Ohm @ 1A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
UMF23NTR | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
UMF24NTR | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
UMG7NTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: UMT5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
UMZ8NTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 150mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V / 270 @ 10mA, 2V Frequency - Transition: 180MHz, 260MHz Supplier Device Package: UMT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SCS215AGC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 550pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SCS215AEC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 550pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SCS220AEC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SCS230AE2C | Rohm Semiconductor |
![]() |
на замовлення 228 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SCS206AMC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 219pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 120 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SCS208AMC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 291pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A Current - Reverse Leakage @ Vr: 160 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SCS212AMC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 438pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 240 µA @ 600 V |
на замовлення 304 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
SCS215AMC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 438pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 240 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SCS220AMC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SCS212AJTLL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 240 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SCS215AJTLL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 550pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 600 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
SCS220AJTLL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
SCS212AJTLL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 240 µA @ 600 V |
на замовлення 960 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
SCS215AJTLL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 550pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 600 V |
на замовлення 3879 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
SCS220AJTLL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V |
на замовлення 1513 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BD95861MUV-EVK-101 | Rohm Semiconductor |
![]() Packaging: Box Voltage - Output: 0.8V ~ 5.5V Voltage - Input: 7.5V ~ 18V Current - Output: 6A Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: BD95861 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BU90002GWZ-EVK-101 | Rohm Semiconductor |
![]() |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU52012NVX-TR | Rohm Semiconductor |
![]() |
на замовлення 2815 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU52053NVX-TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±5mT Trip, ±0.6mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Supplier Device Package: SSON004X1216 Test Condition: 25°C |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BU52054GWZ-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±7.9mT Trip, ±3.5mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Supplier Device Package: UCSP35L1 Test Condition: 25°C |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BU52055GWZ-E2 | Rohm Semiconductor |
![]() |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BU52056NVX-TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±6.4mT Trip, ±2mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Supplier Device Package: SSON004X1216 Test Condition: 25°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU52061NVX-TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±4.7mT Trip, ±1.2mT Release Current - Output (Max): 500µA Current - Supply (Max): 7µA Supplier Device Package: SSON004X1216 Test Condition: 25°C |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BU52012NVX-TR | Rohm Semiconductor |
![]() |
на замовлення 2815 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
MCR03EZHF5601 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.1W, 1/10W Tolerance: ±1% Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 5.6 kOhms |
товару немає в наявності |
В кошику од. на суму грн. |
BU1AUA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 1.05V 0.3A 4SSON
Description: IC REG LDO 1.05V 0.3A 4SSON
на замовлення 4840 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU1BTD2WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 1.15V 0.2A 4SSON
Description: IC REG LDO 1.15V 0.2A 4SSON
на замовлення 4975 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU1BUA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 1.15V 0.3A 4SSON
Description: IC REG LDO 1.15V 0.3A 4SSON
на замовлення 4940 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU1CUA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 1.25V 0.3A 4SSOP
Description: IC REG LDO 1.25V 0.3A 4SSOP
на замовлення 4965 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU22UA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.2V 0.3A 4SSON
Description: IC REG LDO 2.2V 0.3A 4SSON
на замовлення 4935 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU23UA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.3V 0.3A 4SSON
Description: IC REG LDO 2.3V 0.3A 4SSON
на замовлення 4817 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU27UA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.7V 0.3A 4SSON
Description: IC REG LDO 2.7V 0.3A 4SSON
на замовлення 4875 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU28UA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LIN 2.8V 300MA 4SSON
Description: IC REG LIN 2.8V 300MA 4SSON
товару немає в наявності
В кошику
од. на суму грн.
BU29UA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.9V 0.3A 4SSON
Description: IC REG LDO 2.9V 0.3A 4SSON
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU2ATD2WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.05V 0.2A 4SSON
Description: IC REG LDO 2.05V 0.2A 4SSON
на замовлення 350 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU2AUA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.05V 0.3A 4SSOP
Description: IC REG LDO 2.05V 0.3A 4SSOP
на замовлення 4996 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU2HTD2WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LIN 2.75V 200MA 4SSON
Description: IC REG LIN 2.75V 200MA 4SSON
товару немає в наявності
В кошику
од. на суму грн.
BU2HUA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.75V 0.3A 4SSOP
Description: IC REG LDO 2.75V 0.3A 4SSOP
на замовлення 4950 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU2JTD2WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.85V 0.2A 4SSON
Description: IC REG LDO 2.85V 0.2A 4SSON
на замовлення 4403 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU2JUA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.85V 0.3A 4SSOP
Description: IC REG LDO 2.85V 0.3A 4SSOP
на замовлення 4795 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU2KUA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.95V 0.3A 4SSOP
Description: IC REG LDO 2.95V 0.3A 4SSOP
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU31UA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 3.1V 0.3A 4SSON
Description: IC REG LDO 3.1V 0.3A 4SSON
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU32UA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 3.2V 0.3A 4SSON
Description: IC REG LDO 3.2V 0.3A 4SSON
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU34TD2WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 3.4V 0.2A 4SSON
Description: IC REG LDO 3.4V 0.2A 4SSON
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU34UA3WNVX-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 3.4V 0.3A 4SSON
Description: IC REG LDO 3.4V 0.3A 4SSON
на замовлення 4912 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU7421SG-TR |
![]() |
Виробник: Rohm Semiconductor
Description: IC OPAMP GROUND SENSE 5SSOP
Description: IC OPAMP GROUND SENSE 5SSOP
на замовлення 17980 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BZ6A1206GMP-TR |
![]() |
Виробник: Rohm Semiconductor
Description: IC PWR SUPP MOD 1.2V BGA-MDP
Description: IC PWR SUPP MOD 1.2V BGA-MDP
товару немає в наявності
В кошику
од. на суму грн.
BZ6A1806GMP-TR |
![]() |
Виробник: Rohm Semiconductor
Description: IC PWR SUPP MOD 1.8V BGA-MDP
Description: IC PWR SUPP MOD 1.8V BGA-MDP
товару немає в наявності
В кошику
од. на суму грн.
BD15IC0MEFJ-ME2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.5V 1A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.25 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.9V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 700 µA
Description: IC REG LINEAR 1.5V 1A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.25 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.9V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 700 µA
товару немає в наявності
В кошику
од. на суму грн.
ML610Q793-N01HBZ03B |
![]() |
Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 64KB FLASH 48WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 48-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 4.096MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 4K x 8
Operating Temperature: -30°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: nX-U8/100
Data Converters: A/D 3x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-WLCSP (3.06x2.96)
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 48WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 48-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 4.096MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 4K x 8
Operating Temperature: -30°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: nX-U8/100
Data Converters: A/D 3x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-WLCSP (3.06x2.96)
Number of I/O: 21
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
ML610Q793-SDK |
![]() |
Виробник: Rohm Semiconductor
Description: ML610Q793 EVAL BRD
Description: ML610Q793 EVAL BRD
на замовлення 13 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
ML610Q793-N01HBZ03B |
![]() |
Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 64KB FLASH 48WLCSP
Packaging: Cut Tape (CT)
Package / Case: 48-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 4.096MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 4K x 8
Operating Temperature: -30°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: nX-U8/100
Data Converters: A/D 3x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-WLCSP (3.06x2.96)
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 48WLCSP
Packaging: Cut Tape (CT)
Package / Case: 48-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 4.096MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 4K x 8
Operating Temperature: -30°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: nX-U8/100
Data Converters: A/D 3x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-WLCSP (3.06x2.96)
Number of I/O: 21
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
2SA1774EBTLP |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 50V 0.15A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: EMT3F (SOT-416FL)
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: EMT3F (SOT-416FL)
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
товару немає в наявності
В кошику
од. на суму грн.
CDZT2RA8.2B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 8.2V 100MW VMN2
Description: DIODE ZENER 8.2V 100MW VMN2
товару немає в наявності
В кошику
од. на суму грн.
RDD022N50TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 500V 2A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5.4Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 25 V
Description: MOSFET N-CH 500V 2A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5.4Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
RDD022N60TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 2A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 6.7Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V
Description: MOSFET N-CH 600V 2A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 6.7Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
UMF23NTR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN PREBIAS/PNP 0.15W UMT6
Description: TRANS NPN PREBIAS/PNP 0.15W UMT6
товару немає в наявності
В кошику
од. на суму грн.
UMF24NTR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN PREBIAS/NPN 0.15W UMT6
Description: TRANS NPN PREBIAS/NPN 0.15W UMT6
товару немає в наявності
В кошику
од. на суму грн.
UMG7NTR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W UMT5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT5
Description: TRANS 2NPN PREBIAS 0.15W UMT5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT5
товару немає в наявності
В кошику
од. на суму грн.
UMZ8NTR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 50V/12V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V / 270 @ 10mA, 2V
Frequency - Transition: 180MHz, 260MHz
Supplier Device Package: UMT6
Description: TRANS NPN/PNP 50V/12V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V / 270 @ 10mA, 2V
Frequency - Transition: 180MHz, 260MHz
Supplier Device Package: UMT6
товару немає в наявності
В кошику
од. на суму грн.
SCS215AGC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIC 650V 15A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Description: DIODE SIC 650V 15A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
SCS215AEC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Description: DIODE SIL CARBIDE 650V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
SCS220AEC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Description: DIODE SIL CARBIDE 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
SCS230AE2C |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 650V TO247
Description: DIODE ARRAY SCHOTTKY 650V TO247
на замовлення 228 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
SCS206AMC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Description: DIODE SIL CARB 650V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
SCS208AMC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 8A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Description: DIODE SIL CARB 650V 8A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
SCS212AMC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Description: DIODE SIL CARB 650V 12A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
на замовлення 304 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 526.83 грн |
10+ | 343.16 грн |
100+ | 249.88 грн |
SCS215AMC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Description: DIODE SIL CARB 650V 12A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
SCS220AMC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Description: DIODE SIL CARB 650V 20A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
SCS212AJTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Description: DIODE SIL CARB 650V 12A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
SCS215AJTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Description: DIODE SIL CARB 650V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 219.61 грн |
SCS220AJTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Description: DIODE SIL CARB 650V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 364.19 грн |
SCS212AJTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Description: DIODE SIL CARB 650V 12A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
на замовлення 960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 315.14 грн |
10+ | 248.22 грн |
100+ | 238.34 грн |
500+ | 187.84 грн |
SCS215AJTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Description: DIODE SIL CARB 650V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
на замовлення 3879 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 595.27 грн |
10+ | 389.68 грн |
100+ | 285.59 грн |
500+ | 229.35 грн |
SCS220AJTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Description: DIODE SIL CARB 650V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
на замовлення 1513 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 783.87 грн |
10+ | 499.42 грн |
100+ | 379.38 грн |
500+ | 329.12 грн |
BD95861MUV-EVK-101 |
![]() |
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD95861
Packaging: Box
Voltage - Output: 0.8V ~ 5.5V
Voltage - Input: 7.5V ~ 18V
Current - Output: 6A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: BD95861
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR BD95861
Packaging: Box
Voltage - Output: 0.8V ~ 5.5V
Voltage - Input: 7.5V ~ 18V
Current - Output: 6A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: BD95861
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
товару немає в наявності
В кошику
од. на суму грн.
BU90002GWZ-EVK-101 |
![]() |
Виробник: Rohm Semiconductor
Description: BOARD EVAL BU90002GWZ REG
Description: BOARD EVAL BU90002GWZ REG
на замовлення 30 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU52012NVX-TR |
![]() |
Виробник: Rohm Semiconductor
Description: IC HALL SENSOR 0.5MA UNIPO 4-SSO
Description: IC HALL SENSOR 0.5MA UNIPO 4-SSO
на замовлення 2815 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU52053NVX-TR |
![]() |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Supplier Device Package: SSON004X1216
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Supplier Device Package: SSON004X1216
Test Condition: 25°C
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 81.97 грн |
10+ | 59.01 грн |
25+ | 47.24 грн |
100+ | 40.62 грн |
500+ | 34.16 грн |
1000+ | 30.47 грн |
BU52054GWZ-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOL UCSP35L1
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.9mT Trip, ±3.5mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Supplier Device Package: UCSP35L1
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOL UCSP35L1
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.9mT Trip, ±3.5mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Supplier Device Package: UCSP35L1
Test Condition: 25°C
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 44.57 грн |
9+ | 35.71 грн |
10+ | 33.41 грн |
25+ | 28.77 грн |
50+ | 27.07 грн |
100+ | 25.57 грн |
500+ | 22.30 грн |
1000+ | 21.28 грн |
BU52055GWZ-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOL UCSP35L1
Description: MAGNETIC SWITCH OMNIPOL UCSP35L1
на замовлення 9 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 69.74 грн |
BU52056NVX-TR |
![]() |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±6.4mT Trip, ±2mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Supplier Device Package: SSON004X1216
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±6.4mT Trip, ±2mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Supplier Device Package: SSON004X1216
Test Condition: 25°C
товару немає в наявності
В кошику
од. на суму грн.
BU52061NVX-TR |
![]() |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±4.7mT Trip, ±1.2mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 7µA
Supplier Device Package: SSON004X1216
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±4.7mT Trip, ±1.2mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 7µA
Supplier Device Package: SSON004X1216
Test Condition: 25°C
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 60.48 грн |
10+ | 44.45 грн |
25+ | 38.32 грн |
50+ | 34.68 грн |
100+ | 29.54 грн |
500+ | 25.69 грн |
1000+ | 22.11 грн |
BU52012NVX-TR |
![]() |
Виробник: Rohm Semiconductor
Description: IC HALL SENSOR 0.5MA UNIPO 4-SSO
Description: IC HALL SENSOR 0.5MA UNIPO 4-SSO
на замовлення 2815 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
MCR03EZHF5601 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 5.6K OHM 1% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.6 kOhms
Description: RES SMD 5.6K OHM 1% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.6 kOhms
товару немає в наявності
В кошику
од. на суму грн.