Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (121555) > Сторінка 2005 з 2026

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IRFP4321PBF IRFP4321PBF INFINEON TECHNOLOGIES irfp4321pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 78A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
3+178.83 грн
10+147.60 грн
25+138.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TD120N16SOFHPSA1 TD120N16SOFHPSA1 INFINEON TECHNOLOGIES TD120N16SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 100mA
Max. forward voltage: 1.75V
Load current: 120A
Max. load current: 190A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
1+2133.27 грн
5+1823.22 грн
В кошику  од. на суму  грн.
BCR129WH6327 BCR129WH6327 INFINEON TECHNOLOGIES BCR129.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
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BCR129E6327 BCR129E6327 INFINEON TECHNOLOGIES BCR129.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
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BFN24E6327 BFN24E6327 INFINEON TECHNOLOGIES BFN24.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 250V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
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BCR133E6327 BCR133E6327 INFINEON TECHNOLOGIES BCR133.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 2580 шт:
термін постачання 14-30 дні (днів)
34+13.55 грн
50+9.29 грн
100+7.82 грн
200+6.45 грн
250+6.06 грн
400+5.35 грн
500+5.02 грн
1000+4.18 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
BCR133SH6327 BCR133SH6327 INFINEON TECHNOLOGIES BCR133.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
на замовлення 14903 шт:
термін постачання 14-30 дні (днів)
49+9.39 грн
72+5.84 грн
250+4.65 грн
1000+4.50 грн
3000+4.40 грн
Мінімальне замовлення: 49
В кошику  од. на суму  грн.
BCR133WH6327XTSA1 INFINEON TECHNOLOGIES bcr133series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7f8a3f0288 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
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CY7C1360C-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 200MHz
Case: TQFP100
Kind of package: in-tray
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CY7C1360C-200AXCT INFINEON TECHNOLOGIES ?docID=39999 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 200MHz
Case: TQFP100
Kind of package: reel; tape
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CY7C1361C-100AXE INFINEON TECHNOLOGIES Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 100MHz
Case: TQFP100
Kind of package: in-tray
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CY7C1361C-100AXET INFINEON TECHNOLOGIES ?docID=50329 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 100MHz
Case: TQFP100
Kind of package: reel; tape
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CY7C1361C-100BZXE INFINEON TECHNOLOGIES Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; FBGA165; parallel; -40÷125°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 100MHz
Case: FBGA165
Kind of package: in-tray
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CY7C1361C-133AXI INFINEON TECHNOLOGIES Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 133MHz
Case: TQFP100
Kind of package: in-tray
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XDPL8221XUMA1 XDPL8221XUMA1 INFINEON TECHNOLOGIES XDPL8221.pdf Category: Drivers - integrated circuits
Description: IC: driver; flyback; AC/DC switcher,LED driver; PG-DSO-16; 260uA
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: AC/DC switcher; LED driver
Case: PG-DSO-16
Output current: 260µA
Mounting: SMD
Operating voltage: 6...24V DC
Frequency: 66MHz
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IPP200N15N3GXKSA1 IPP200N15N3GXKSA1 INFINEON TECHNOLOGIES IPP200N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 50A
On-state resistance: 20mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
на замовлення 402 шт:
термін постачання 14-30 дні (днів)
3+204.11 грн
10+99.80 грн
50+83.86 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPW60R170CFD7 IPW60R170CFD7 INFINEON TECHNOLOGIES IPW60R170CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
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IPP60R199CPXKSA1 IPP60R199CPXKSA1 INFINEON TECHNOLOGIES IPP60R199CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
2+259.21 грн
10+171.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFML8244TRPBF IRFML8244TRPBF INFINEON TECHNOLOGIES irfml8244pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
на замовлення 2996 шт:
термін постачання 14-30 дні (днів)
30+15.35 грн
34+12.41 грн
38+11.32 грн
100+7.97 грн
500+6.46 грн
1000+5.95 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IPP60R385CPXKSA1 IPP60R385CPXKSA1 INFINEON TECHNOLOGIES IPP60R385CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
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IPB60R385CPATMA1 IPB60R385CPATMA1 INFINEON TECHNOLOGIES IPB60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO263-3
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IPD60R385CPATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™ CP
Pulsed drain current: 27A
Gate-source voltage: ±20V
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IPL60R385CPAUMA1 IPL60R385CPAUMA1 INFINEON TECHNOLOGIES IPL60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-VSON-4
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IPA60R125C6XKSA1 IPA60R125C6XKSA1 INFINEON TECHNOLOGIES IPA60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
3+223.08 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA60R125CPXKSA1 IPA60R125CPXKSA1 INFINEON TECHNOLOGIES IPA60R125CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
1+460.61 грн
3+368.17 грн
10+296.04 грн
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IPA60R125P6XKSA1 IPA60R125P6XKSA1 INFINEON TECHNOLOGIES IPA60R125P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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1ED020I12B2XUMA1 INFINEON TECHNOLOGIES infineon-1ed020i12-b2-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
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S29GL512T10TFI010 S29GL512T10TFI010 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI010 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Operating voltage: 2.7...3.6V
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S29GL01GT10TFA010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Application: automotive
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI020 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI030 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFA010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Application: automotive
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI020 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
товару немає в наявності
В кошику  од. на суму  грн.
S29GL512T10TFI023 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
товару немає в наявності
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S29GL512T10TFI030 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
товару немає в наявності
В кошику  од. на суму  грн.
S29GL512T10TFI040 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI043 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
товару немає в наявності
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BAS116E6327HTSA1 BAS116E6327HTSA1 INFINEON TECHNOLOGIES BAS116E6327.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 5193 шт:
термін постачання 14-30 дні (днів)
34+13.55 грн
41+10.23 грн
47+8.97 грн
57+7.38 грн
100+5.44 грн
500+3.79 грн
1000+3.18 грн
3000+2.78 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SMBT3906E6327HTSA1 SMBT3906E6327HTSA1 INFINEON TECHNOLOGIES SMBT3906E6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Case: SOT23
Type of transistor: PNP
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.33W
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
на замовлення 1570 шт:
термін постачання 14-30 дні (днів)
39+11.74 грн
63+6.71 грн
77+5.47 грн
100+4.96 грн
250+4.29 грн
500+3.78 грн
1000+3.34 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
CY8C4125LTI-M445 CY8C4125LTI-M445 INFINEON TECHNOLOGIES CY8C4125AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
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CY8C4127LTI-M475 CY8C4127LTI-M475 INFINEON TECHNOLOGIES CY8C4125AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 16kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
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CY8C4245LTI-M445 CY8C4245LTI-M445 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
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CY8C4247LTI-M475 CY8C4247LTI-M475 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 16kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
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CY8C4248LTI-L475 CY8C4248LTI-L475 INFINEON TECHNOLOGIES CY8C4246AZI-L423.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 53
Memory: 32kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
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CYUSB3304-68LTXC INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: IC: interface; SMD; 0÷70°C; QFN68; Kind of ciruit: USB controller
Type of integrated circuit: interface
Interface: I2C
Case: QFN68
Mounting: SMD
Operating temperature: 0...70°C
Kind of integrated circuit: USB controller
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AIKW75N60CTXKSA1 AIKW75N60CTXKSA1 INFINEON TECHNOLOGIES AIKW75N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
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ITS4200SMEOHUMA1 ITS4200SMEOHUMA1 INFINEON TECHNOLOGIES ITS4200SMEOHUMA1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.15Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 11...45V DC
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ITS4200SMEPHUMA1 INFINEON TECHNOLOGIES ITS4200SMEP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Number of channels: 1
Output current: 1.4A
Mounting: SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Kind of package: reel; tape
Case: SOT223-4
Operating temperature: -40...125°C
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Kind of output: N-Channel
товару немає в наявності
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ITS4200SMENHUMA1 INFINEON TECHNOLOGIES ITS4200SMEN.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.16Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 5...34V DC
товару немає в наявності
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CYPD3177-24LQXQ INFINEON TECHNOLOGIES Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Operating temperature: -40...105°C
Application: USB
Interface: I2C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Kind of integrated circuit: transceiver
DC supply current: 10mA
Data transfer rate: 1Mbps
на замовлення 670 шт:
термін постачання 14-30 дні (днів)
490+114.70 грн
Мінімальне замовлення: 490
В кошику  од. на суму  грн.
CYPD3177-24LQXQT INFINEON TECHNOLOGIES Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Application: USB
Interface: I2C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Kind of integrated circuit: transceiver
DC supply current: 10mA
Data transfer rate: 1Mbps
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
2500+107.48 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IGZ100N65H5XKSA1 IGZ100N65H5XKSA1 INFINEON TECHNOLOGIES IGZ100N65H5XKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 101A
Power dissipation: 268W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 40ns
Turn-off time: 485ns
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EVALPSIR2085TOBO1 INFINEON TECHNOLOGIES Infineon-UG-2021-33_EVAL-PSIR2085-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7c5627e7017c6fe78b1d0879 Category: Integrated circuits - Unclassified
Description: EVALPSIR2085TOBO1
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+13113.90 грн
В кошику  од. на суму  грн.
BSS225H6327FTSA1 BSS225H6327FTSA1 INFINEON TECHNOLOGIES BSS225H6327FTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Case: SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
на замовлення 262 шт:
термін постачання 14-30 дні (днів)
11+43.35 грн
25+17.02 грн
100+15.01 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IPD90N03S4L02ATMA1 IPD90N03S4L02ATMA1 INFINEON TECHNOLOGIES IPD90N03S4L02.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
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IRFR3806TRPBF IRFR3806TRPBF INFINEON TECHNOLOGIES irfr3806pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 43A
Power dissipation: 71W
на замовлення 397 шт:
термін постачання 14-30 дні (днів)
5+102.96 грн
7+65.58 грн
10+58.71 грн
50+46.38 грн
100+41.93 грн
250+36.65 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRF1104PBF IRF1104PBF INFINEON TECHNOLOGIES irf1104.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
6+81.28 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRFP4321PBF irfp4321pbf.pdf
IRFP4321PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 78A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+178.83 грн
10+147.60 грн
25+138.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TD120N16SOFHPSA1 TD120N16SOF.pdf
TD120N16SOFHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 100mA
Max. forward voltage: 1.75V
Load current: 120A
Max. load current: 190A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2133.27 грн
5+1823.22 грн
В кошику  од. на суму  грн.
BCR129WH6327 BCR129.pdf
BCR129WH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
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BCR129E6327 BCR129.pdf
BCR129E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
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BFN24E6327 BFN24.pdf
BFN24E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 250V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
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BCR133E6327 BCR133.pdf
BCR133E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 2580 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.55 грн
50+9.29 грн
100+7.82 грн
200+6.45 грн
250+6.06 грн
400+5.35 грн
500+5.02 грн
1000+4.18 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
BCR133SH6327 BCR133.pdf
BCR133SH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
на замовлення 14903 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
49+9.39 грн
72+5.84 грн
250+4.65 грн
1000+4.50 грн
3000+4.40 грн
Мінімальне замовлення: 49
В кошику  од. на суму  грн.
BCR133WH6327XTSA1 bcr133series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7f8a3f0288
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
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CY7C1360C-200AXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 200MHz
Case: TQFP100
Kind of package: in-tray
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CY7C1360C-200AXCT ?docID=39999
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 200MHz
Case: TQFP100
Kind of package: reel; tape
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CY7C1361C-100AXE Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 100MHz
Case: TQFP100
Kind of package: in-tray
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CY7C1361C-100AXET ?docID=50329
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 100MHz
Case: TQFP100
Kind of package: reel; tape
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CY7C1361C-100BZXE Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; FBGA165; parallel; -40÷125°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 100MHz
Case: FBGA165
Kind of package: in-tray
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CY7C1361C-133AXI Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 133MHz
Case: TQFP100
Kind of package: in-tray
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XDPL8221XUMA1 XDPL8221.pdf
XDPL8221XUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; flyback; AC/DC switcher,LED driver; PG-DSO-16; 260uA
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: AC/DC switcher; LED driver
Case: PG-DSO-16
Output current: 260µA
Mounting: SMD
Operating voltage: 6...24V DC
Frequency: 66MHz
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IPP200N15N3GXKSA1 IPP200N15N3G-DTE.pdf
IPP200N15N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 50A
On-state resistance: 20mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
на замовлення 402 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+204.11 грн
10+99.80 грн
50+83.86 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPW60R170CFD7 IPW60R170CFD7.pdf
IPW60R170CFD7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
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IPP60R199CPXKSA1 IPP60R199CP-DTE.pdf
IPP60R199CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+259.21 грн
10+171.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFML8244TRPBF irfml8244pbf.pdf
IRFML8244TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
на замовлення 2996 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
30+15.35 грн
34+12.41 грн
38+11.32 грн
100+7.97 грн
500+6.46 грн
1000+5.95 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IPP60R385CPXKSA1 IPP60R385CP-DTE.pdf
IPP60R385CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
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IPB60R385CPATMA1 IPB60R385CP-DTE.pdf
IPB60R385CPATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO263-3
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IPD60R385CPATMA1 Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™ CP
Pulsed drain current: 27A
Gate-source voltage: ±20V
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IPL60R385CPAUMA1 IPL60R385CP-DTE.pdf
IPL60R385CPAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-VSON-4
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IPA60R125C6XKSA1 IPA60R125C6-DTE.pdf
IPA60R125C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+223.08 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA60R125CPXKSA1 IPA60R125CP-DTE.pdf
IPA60R125CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+460.61 грн
3+368.17 грн
10+296.04 грн
В кошику  од. на суму  грн.
IPA60R125P6XKSA1 IPA60R125P6-DTE.pdf
IPA60R125P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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1ED020I12B2XUMA1 infineon-1ed020i12-b2-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
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S29GL512T10TFI010 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL512T10TFI010
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI010 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Operating voltage: 2.7...3.6V
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S29GL01GT10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Application: automotive
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI020 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Application: automotive
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
товару немає в наявності
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S29GL512T10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
товару немає в наявності
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S29GL512T10TFI020 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
товару немає в наявності
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S29GL512T10TFI023 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
товару немає в наявності
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S29GL512T10TFI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
товару немає в наявності
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S29GL512T10TFI040 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
товару немає в наявності
В кошику  од. на суму  грн.
S29GL512T10TFI043 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
товару немає в наявності
В кошику  од. на суму  грн.
BAS116E6327HTSA1 BAS116E6327.pdf
BAS116E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 5193 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.55 грн
41+10.23 грн
47+8.97 грн
57+7.38 грн
100+5.44 грн
500+3.79 грн
1000+3.18 грн
3000+2.78 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SMBT3906E6327HTSA1 SMBT3906E6327.pdf
SMBT3906E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Case: SOT23
Type of transistor: PNP
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.33W
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
на замовлення 1570 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.74 грн
63+6.71 грн
77+5.47 грн
100+4.96 грн
250+4.29 грн
500+3.78 грн
1000+3.34 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
CY8C4125LTI-M445 CY8C4125AZI-M443.pdf
CY8C4125LTI-M445
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
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CY8C4127LTI-M475 CY8C4125AZI-M443.pdf
CY8C4127LTI-M475
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 16kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
товару немає в наявності
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CY8C4245LTI-M445 CY8C4245AZI-M443.pdf
CY8C4245LTI-M445
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
товару немає в наявності
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CY8C4247LTI-M475 CY8C4245AZI-M443.pdf
CY8C4247LTI-M475
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 16kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
товару немає в наявності
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CY8C4248LTI-L475 CY8C4246AZI-L423.pdf
CY8C4248LTI-L475
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 53
Memory: 32kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
товару немає в наявності
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CYUSB3304-68LTXC Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: IC: interface; SMD; 0÷70°C; QFN68; Kind of ciruit: USB controller
Type of integrated circuit: interface
Interface: I2C
Case: QFN68
Mounting: SMD
Operating temperature: 0...70°C
Kind of integrated circuit: USB controller
товару немає в наявності
В кошику  од. на суму  грн.
AIKW75N60CTXKSA1 AIKW75N60CT.pdf
AIKW75N60CTXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
товару немає в наявності
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ITS4200SMEOHUMA1 ITS4200SMEOHUMA1.pdf
ITS4200SMEOHUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.15Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 11...45V DC
товару немає в наявності
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ITS4200SMEPHUMA1 ITS4200SMEP.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Number of channels: 1
Output current: 1.4A
Mounting: SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Kind of package: reel; tape
Case: SOT223-4
Operating temperature: -40...125°C
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Kind of output: N-Channel
товару немає в наявності
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ITS4200SMENHUMA1 ITS4200SMEN.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.16Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 5...34V DC
товару немає в наявності
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CYPD3177-24LQXQ Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Operating temperature: -40...105°C
Application: USB
Interface: I2C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Kind of integrated circuit: transceiver
DC supply current: 10mA
Data transfer rate: 1Mbps
на замовлення 670 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
490+114.70 грн
Мінімальне замовлення: 490
В кошику  од. на суму  грн.
CYPD3177-24LQXQT Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Application: USB
Interface: I2C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Kind of integrated circuit: transceiver
DC supply current: 10mA
Data transfer rate: 1Mbps
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2500+107.48 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IGZ100N65H5XKSA1 IGZ100N65H5XKSA1-DTE.pdf
IGZ100N65H5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 101A
Power dissipation: 268W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 40ns
Turn-off time: 485ns
товару немає в наявності
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EVALPSIR2085TOBO1 Infineon-UG-2021-33_EVAL-PSIR2085-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7c5627e7017c6fe78b1d0879
Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: EVALPSIR2085TOBO1
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+13113.90 грн
В кошику  од. на суму  грн.
BSS225H6327FTSA1 BSS225H6327FTSA1.pdf
BSS225H6327FTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Case: SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
на замовлення 262 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+43.35 грн
25+17.02 грн
100+15.01 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IPD90N03S4L02ATMA1 IPD90N03S4L02.pdf
IPD90N03S4L02ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRFR3806TRPBF irfr3806pbf.pdf
IRFR3806TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 43A
Power dissipation: 71W
на замовлення 397 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+102.96 грн
7+65.58 грн
10+58.71 грн
50+46.38 грн
100+41.93 грн
250+36.65 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRF1104PBF irf1104.pdf
IRF1104PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+81.28 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
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