Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (11840) > Сторінка 41 з 198
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SI7115DN-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 150V 8.9A PPAK1212-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V |
на замовлення 576 шт: термін постачання 21-31 дні (днів) |
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SI7121DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 16A PPAK1212-8 Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
на замовлення 10238 шт: термін постачання 21-31 дні (днів) |
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SI7123DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 10.2A 1212-8 |
на замовлення 17508 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SI7160DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 20A PPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7164DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 1237 шт: термін постачання 21-31 дні (днів) |
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SI7172DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 25A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 7461 шт: термін постачання 21-31 дні (днів) |
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SI7174DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 75V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7178DP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 100V 60A PPAK SO-8Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V |
на замовлення 6127 шт: термін постачання 21-31 дні (днів) |
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SI7186DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 32A PPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7192DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7194DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 25V 60A PPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7196DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 16A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 1577 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 5W (Ta), 41.6W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7234DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 12V 60A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 60A Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 6V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
на замовлення 22185 шт: термін постачання 21-31 дні (днів) |
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SI7322DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 18A PPAK1212-8 Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 4.4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
на замовлення 16441 шт: термін постачання 21-31 дні (днів) |
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SI7328DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 35A 1212-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7405BDN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 16A PPAK1212-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7460DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 11A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 3408 шт: термін постачання 21-31 дні (днів) |
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SI7611DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 18A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 20 V |
на замовлення 31966 шт: термін постачання 21-31 дні (днів) |
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SI7620DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 13A PPAK1212-8 Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.8W (Ta), 5.2W (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7634BDP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 704 шт: термін постачання 21-31 дні (днів) |
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SI7658ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 15 V |
на замовлення 2587 шт: термін постачання 21-31 дні (днів) |
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SI7716ADN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 16A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 846 pF @ 15 V |
на замовлення 7458 шт: термін постачання 21-31 дні (днів) |
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SI7718DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 35A 1212-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7720DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 12A 1212-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7738DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 30A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V |
на замовлення 2270 шт: термін постачання 21-31 дні (днів) |
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SI7742DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7748DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 50A PPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7758DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7784DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7788DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 50A PPAK SO-8 |
на замовлення 6870 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SI7790DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 50A PPAK SO-8 |
на замовлення 691 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SI7802DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 250V 1.24A 1212-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7848BDP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 47A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 4.2W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 2133 шт: термін постачання 21-31 дні (днів) |
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SI7852ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 30A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 4333 шт: термін постачання 21-31 дні (днів) |
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SI7882DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 12V 13A PPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7884BDP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 58A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 4.6W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 6043 шт: термін постачання 21-31 дні (днів) |
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SI7905DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 40V 6A PPAK 1212-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7940DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 12V 7.6A PPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI7948DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 3A PPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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Si7980DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 8A PPAK SO-8 |
на замовлення 8085 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SI7994DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 60A PPAK SO8 Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V Current - Continuous Drain (Id) @ 25°C: 60A Drain to Source Voltage (Vdss): 30V Power - Max: 46W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
на замовлення 2217 шт: термін постачання 21-31 дні (днів) |
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SIA408DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A SC70-6 |
на замовлення 2757 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIA413DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V |
на замовлення 141390 шт: термін постачання 21-31 дні (днів) |
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SIA414DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 8V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V |
на замовлення 17033 шт: термін постачання 21-31 дні (днів) |
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SIA415DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 12A SC70-6 |
на замовлення 5849 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIA417DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 12A SC70-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SIA419DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 12A SC70-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SIA421DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V |
на замовлення 53213 шт: термін постачання 21-31 дні (днів) |
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SIA426DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 4.5A SC70-6 |
на замовлення 8006 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIA430DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 12A SC70-6 |
на замовлення 3605 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIA432DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V |
на замовлення 3210 шт: термін постачання 21-31 дні (днів) |
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SIA456DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A PPAK SC70 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V |
на замовлення 21443 шт: термін постачання 21-31 дні (днів) |
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SIA511DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 12V 4.5A PPAK8X8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6.5W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SIA513DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 4.5A PPAK8X8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SIA813DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 4.5A SC70-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SIA814DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 3.3A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SIA911EDJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.5A SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 101mOhm @ 2.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SIA912DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 12V 4.5A SC70-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SIA917DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.5A SC70-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SIB413DK-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 9A SC75-6 |
товару немає в наявності |
В кошику од. на суму грн. |
| SI7115DN-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
на замовлення 576 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.54 грн |
| 10+ | 125.86 грн |
| 100+ | 86.66 грн |
| 500+ | 65.59 грн |
| SI7121DN-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 16A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
на замовлення 10238 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.14 грн |
| 10+ | 76.72 грн |
| 100+ | 55.97 грн |
| 500+ | 41.58 грн |
| 1000+ | 38.06 грн |
| SI7123DN-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 10.2A 1212-8
Description: MOSFET P-CH 20V 10.2A 1212-8
на замовлення 17508 шт:
термін постачання 21-31 дні (днів)
| SI7160DP-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Description: MOSFET N-CH 30V 20A PPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7164DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 1237 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 295.89 грн |
| 10+ | 186.96 грн |
| 100+ | 131.25 грн |
| 500+ | 100.83 грн |
| 1000+ | 93.66 грн |
| SI7172DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 25A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 25A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 7461 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 197.79 грн |
| 10+ | 158.39 грн |
| 100+ | 126.08 грн |
| 500+ | 100.12 грн |
| 1000+ | 84.95 грн |
| SI7174DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 75V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 40 V
Description: MOSFET N-CH 75V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| SI7178DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Description: MOSFET N-CH 100V 60A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
на замовлення 6127 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 276.91 грн |
| 10+ | 174.62 грн |
| 100+ | 122.15 грн |
| 500+ | 93.59 грн |
| 1000+ | 86.83 грн |
| SI7186DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 32A PPAK SO-8
Description: MOSFET N-CH 80V 32A PPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7192DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Description: MOSFET N-CH 30V 60A PPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7194DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Description: MOSFET N-CH 25V 60A PPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7196DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1577 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Ta), 41.6W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 16A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1577 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Ta), 41.6W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SI7234DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 12V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 6V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Description: MOSFET 2N-CH 12V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 6V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
на замовлення 22185 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 308.55 грн |
| 10+ | 195.11 грн |
| 50+ | 151.20 грн |
| 100+ | 128.60 грн |
| 500+ | 107.47 грн |
| SI7322DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 18A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 18A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
на замовлення 16441 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.84 грн |
| 10+ | 96.30 грн |
| 100+ | 74.89 грн |
| 500+ | 59.57 грн |
| 1000+ | 48.53 грн |
| SI7328DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 35A 1212-8
Description: MOSFET N-CH 30V 35A 1212-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7405BDN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 16A PPAK1212-8
Description: MOSFET P-CH 12V 16A PPAK1212-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7460DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 11A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 11A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 3408 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.73 грн |
| 10+ | 137.74 грн |
| 100+ | 95.06 грн |
| 500+ | 72.09 грн |
| 1000+ | 66.59 грн |
| SI7611DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 18A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 20 V
Description: MOSFET P-CH 40V 18A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 20 V
на замовлення 31966 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 174.85 грн |
| 10+ | 108.41 грн |
| 50+ | 82.33 грн |
| 100+ | 69.36 грн |
| 500+ | 55.50 грн |
| SI7620DN-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 13A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 5.2W (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 13A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 5.2W (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SI7634BDP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 40A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 704 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.95 грн |
| 10+ | 117.94 грн |
| 100+ | 93.88 грн |
| 500+ | 74.54 грн |
| SI7658ADP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 15 V
Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 15 V
на замовлення 2587 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 262.67 грн |
| 10+ | 165.70 грн |
| 100+ | 116.28 грн |
| 500+ | 97.41 грн |
| SI7716ADN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 846 pF @ 15 V
Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 846 pF @ 15 V
на замовлення 7458 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.96 грн |
| 10+ | 78.78 грн |
| 100+ | 52.89 грн |
| 500+ | 39.20 грн |
| 1000+ | 35.84 грн |
| SI7718DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 35A 1212-8
Description: MOSFET N-CH 30V 35A 1212-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7720DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 1212-8
Description: MOSFET N-CH 30V 12A 1212-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7738DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
Description: MOSFET N-CH 150V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
на замовлення 2270 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 298.27 грн |
| 10+ | 189.25 грн |
| 100+ | 133.36 грн |
| 500+ | 105.99 грн |
| SI7742DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Description: MOSFET N-CH 30V 60A PPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7748DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Description: MOSFET N-CH 30V 50A PPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7758DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Description: MOSFET N-CH 30V 60A PPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7784DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Description: MOSFET N-CH 30V 35A PPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7788DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Description: MOSFET N-CH 30V 50A PPAK SO-8
на замовлення 6870 шт:
термін постачання 21-31 дні (днів)
| SI7790DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Description: MOSFET N-CH 40V 50A PPAK SO-8
на замовлення 691 шт:
термін постачання 21-31 дні (днів)
| SI7802DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 1.24A 1212-8
Description: MOSFET N-CH 250V 1.24A 1212-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7848BDP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 47A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 47A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 2133 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.95 грн |
| 10+ | 172.41 грн |
| 100+ | 120.79 грн |
| 500+ | 93.72 грн |
| SI7852ADP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 4333 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.27 грн |
| 10+ | 141.25 грн |
| 100+ | 97.56 грн |
| 500+ | 74.04 грн |
| 1000+ | 68.41 грн |
| SI7882DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 12V 13A PPAK SO-8
Description: MOSFET N-CH 12V 13A PPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7884BDP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 58A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 6043 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.67 грн |
| 10+ | 107.57 грн |
| SI7905DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 40V 6A PPAK 1212-8
Description: MOSFET 2P-CH 40V 6A PPAK 1212-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7940DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 12V 7.6A PPAK SO-8
Description: MOSFET 2N-CH 12V 7.6A PPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7948DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3A PPAK SO-8
Description: MOSFET 2N-CH 60V 3A PPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| Si7980DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8A PPAK SO-8
Description: MOSFET 2N-CH 20V 8A PPAK SO-8
на замовлення 8085 шт:
термін постачання 21-31 дні (днів)
| SI7994DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 60A PPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 60A
Drain to Source Voltage (Vdss): 30V
Power - Max: 46W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 60A PPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 60A
Drain to Source Voltage (Vdss): 30V
Power - Max: 46W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
на замовлення 2217 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 257.13 грн |
| 10+ | 208.14 грн |
| 100+ | 168.37 грн |
| 500+ | 140.45 грн |
| 1000+ | 120.26 грн |
| SIA408DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SC70-6
Description: MOSFET N-CH 30V 4.5A SC70-6
на замовлення 2757 шт:
термін постачання 21-31 дні (днів)
| SIA413DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
на замовлення 141390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.90 грн |
| 10+ | 60.11 грн |
| 100+ | 39.94 грн |
| 500+ | 29.35 грн |
| 1000+ | 26.73 грн |
| SIA414DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V
на замовлення 17033 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 45.10 грн |
| 10+ | 35.43 грн |
| 100+ | 27.55 грн |
| 500+ | 21.91 грн |
| 1000+ | 21.67 грн |
| SIA415DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Description: MOSFET P-CH 20V 12A SC70-6
на замовлення 5849 шт:
термін постачання 21-31 дні (днів)
| SIA417DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 8V 12A SC70-6
Description: MOSFET P-CH 8V 12A SC70-6
товару немає в наявності
В кошику
од. на суму грн.
| SIA419DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Description: MOSFET P-CH 20V 12A SC70-6
товару немає в наявності
В кошику
од. на суму грн.
| SIA421DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
на замовлення 53213 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.41 грн |
| 10+ | 60.64 грн |
| 100+ | 47.27 грн |
| 500+ | 36.65 грн |
| 1000+ | 28.93 грн |
| SIA426DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 4.5A SC70-6
Description: MOSFET N-CH 20V 4.5A SC70-6
на замовлення 8006 шт:
термін постачання 21-31 дні (днів)
| SIA430DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6
Description: MOSFET N-CH 20V 12A SC70-6
на замовлення 3605 шт:
термін постачання 21-31 дні (днів)
| SIA432DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V
Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V
на замовлення 3210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 78.33 грн |
| 10+ | 61.41 грн |
| 100+ | 47.75 грн |
| 500+ | 37.98 грн |
| 1000+ | 30.94 грн |
| SIA456DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A PPAK SC70
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
Description: MOSFET N-CH 200V 2.6A PPAK SC70
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
на замовлення 21443 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.90 грн |
| 10+ | 60.11 грн |
| 100+ | 39.94 грн |
| 500+ | 29.35 грн |
| 1000+ | 26.73 грн |
| SIA511DJ-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Description: MOSFET N/P-CH 12V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
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| SIA513DJ-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Description: MOSFET N/P-CH 20V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
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| SIA813DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC70-6
Description: MOSFET P-CH 20V 4.5A SC70-6
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од. на суму грн.
| SIA814DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
Description: MOSFET N-CH 30V 4.5A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
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од. на суму грн.
| SIA911EDJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 101mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 101mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
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| SIA912DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 12V 4.5A SC70-6
Description: MOSFET 2N-CH 12V 4.5A SC70-6
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од. на суму грн.
| SIA917DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Description: MOSFET 2P-CH 20V 4.5A SC70-6
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од. на суму грн.
| SIB413DK-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC75-6
Description: MOSFET P-CH 20V 9A SC75-6
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од. на суму грн.