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DI00002RAPESCODescription: RAPESCO - DI00002 - Klebebandabroller, stoßfester Kunststoff, für Klebebänder mit den Abmessungen 50mm x 66mm
tariffCode: 39269097
productTraceability: No
Spendertyp: Band
rohsCompliant: NA
Länge: -
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: -
SVHC: No SVHC (19-Jan-2021)
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
1+1140.66 грн
5+ 981.24 грн
DI001N65PTKDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 31.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V
товар відсутній
DI001N65PTK-AQDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 31.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V
Qualification: AEC-Q101
товар відсутній
DI003N03SQ2DIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 9A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±18V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DI003N03SQ2DComponentsDescription: MOSFET, SO-8, 30V
товар відсутній
DI003N03SQ2Diotec SemiconductorMOSFET MOSFET, SO-8, 30V, 3A, 150C, N
товар відсутній
DI003N03SQ2DIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 9A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±18V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI005N03PW-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 2x2, 30V, 5A, 150C, N, AEC-Q101
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
6+55.64 грн
10+ 44.62 грн
100+ 26.22 грн
500+ 24.92 грн
1000+ 22.71 грн
2500+ 13.56 грн
4000+ 11.87 грн
Мінімальне замовлення: 6
DI005N06SQ2Diotec SemiconductorDual N-Channel Power MOSFET N-Kanal Leistungs-Doppel-MOSFET
товар відсутній
DI005N06SQ2Diotec SemiconductorDescription: MOSFET, SO-8, 60V, 5A, 150C, 0
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
товар відсутній
DI005P04PW-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; Idm: -40A; 2W; QFN2X2
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.4A
Pulsed drain current: -40A
Power dissipation: 2W
Case: QFN2X2
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI005P04PW-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; Idm: -40A; 2W; QFN2X2
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.4A
Pulsed drain current: -40A
Power dissipation: 2W
Case: QFN2X2
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI006H03SQDiotec SemiconductorDescription: MOSFET SO8 N+P 30V 0.025OHM 150C
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
DI006H03SQDIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 4.8/-3.3A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.8/-3.3A
Pulsed drain current: 60...-30A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/80mΩ
Mounting: SMD
Gate charge: 11.7/11.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: MOSFET H-Bridge
кількість в упаковці: 1 шт
товар відсутній
DI006H03SQDiotec SemiconductorDescription: MOSFET SO8 N+P 30V 0.025OHM 150C
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
DI006H03SQDiotec SemiconductorMOSFET MOSFET, SO-8, 30V, 6A, 150C, N+P
на замовлення 3975 шт:
термін постачання 21-30 дні (днів)
2+186.23 грн
10+ 144.02 грн
100+ 74.62 грн
500+ 73.97 грн
1000+ 72.03 грн
2000+ 63.4 грн
4000+ 59.83 грн
Мінімальне замовлення: 2
DI006H03SQDIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 4.8/-3.3A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.8/-3.3A
Pulsed drain current: 60...-30A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/80mΩ
Mounting: SMD
Gate charge: 11.7/11.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: MOSFET H-Bridge
товар відсутній
DI006P02PWDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -36A; 2W; QFN2X2
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -36A
Power dissipation: 2W
Case: QFN2X2
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI006P02PWDiotec SemiconductorDescription: MOSFET, POWERQFN 2X2, -20V, -6A,
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+15.76 грн
Мінімальне замовлення: 4000
DI006P02PWDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -36A; 2W; QFN2X2
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -36A
Power dissipation: 2W
Case: QFN2X2
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DI008N09SQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 90V; 8A; Idm: 23A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 90V
Drain current: 8A
Pulsed drain current: 23A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI008N09SQDiotec SemiconductorDescription: MOSFET SO8 90V 8A 0.075OHM 150C
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Power Dissipation (Max): 2W
Supplier Device Package: 8-SO
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+18.16 грн
Мінімальне замовлення: 4000
DI008N09SQDiotec SemiconductorMOSFET MOSFET, SO-8, 90V, 8A, 150C, N
на замовлення 3970 шт:
термін постачання 21-30 дні (днів)
5+74.64 грн
10+ 57.98 грн
100+ 30.24 грн
500+ 29.91 грн
1000+ 29.01 грн
2000+ 25.63 грн
4000+ 20.25 грн
Мінімальне замовлення: 5
DI008N09SQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 90V; 8A; Idm: 23A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 90V
Drain current: 8A
Pulsed drain current: 23A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI008N09SQDiotec SemiconductorDescription: MOSFET SO8 90V 8A 0.075OHM 150C
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Power Dissipation (Max): 2W
Supplier Device Package: 8-SO
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
6+47.73 грн
10+ 39.88 грн
100+ 27.62 грн
500+ 21.65 грн
1000+ 18.43 грн
2000+ 16.41 грн
Мінімальне замовлення: 6
DI0101ifm efector, inc.Description: SPEED MONITOR; M30 X 1,5; NORMAL
Packaging: Box
Package / Case: Cylinder, Threaded - M30
Output Type: SPST-NO
Operating Temperature: -25°C ~ 80°C (TA)
Termination Style: Cable
Voltage - Supply: 20V ~ 250V
товар відсутній
DI010N03PWDIOTEC SEMICONDUCTORDI010N03PW-DIO SMD N channel transistors
товар відсутній
DI010N03PWDiotec SemiconductorMOSFET MOSFET, PowerQFN 2x2, 30V, 10A, 150C, N
на замовлення 7400 шт:
термін постачання 21-30 дні (днів)
10+32.4 грн
12+ 25.3 грн
100+ 13.24 грн
500+ 13.11 грн
1000+ 12.65 грн
2000+ 11.23 грн
4000+ 10.51 грн
Мінімальне замовлення: 10
DI010N03PWDiotec SemiconductorTrans MOSFET N-CH 30V 10A
товар відсутній
DI010N03PWDiotec SemiconductorDescription: MOSFET, POWERQFN 2X2, 30V, 10A,
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+15.12 грн
Мінімальне замовлення: 3000
DI010N03PW-AQDiotec SemiconductorN-Channel Power MosfetAEC- Q101 qualification
товар відсутній
DI010N03PW-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 2X2, 30V, 10A,
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+19.44 грн
Мінімальне замовлення: 3000
DI010N03PW-AQDIOTEC SEMICONDUCTORDI010N03PW-AQ-DIO SMD N channel transistors
товар відсутній
DI012N60D1Diotec SemiconductorDescription: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3, DPak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 150 V
товар відсутній
DI014N25D1-AQDiotec SemiconductorMOSFET, DPAK, N, 250V, 15A, 0.28
товар відсутній
DI014N25D1-AQDiotec Semiconductor AGDescription: MOSFET, DPAK, N, 250V, 15A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 15A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Qualification: AEC-Q101
товар відсутній
DI015N25D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.6A; Idm: 60A; 140W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.6A
Pulsed drain current: 60A
Power dissipation: 140W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DI015N25D1Diotec SemiconductorDescription: MOSFET N-CH 250V 15A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 255mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252-3, DPak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 125 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+96.28 грн
Мінімальне замовлення: 2500
DI015N25D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.6A; Idm: 60A; 140W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.6A
Pulsed drain current: 60A
Power dissipation: 140W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI015N25D1Diotec SemiconductorTrans MOSFET N-CH 250V 15A 3-Pin(2+Tab) DPAK T/R
товар відсутній
DI017N06PQ-AQDiotec SemiconductorDC/DC ConvertersPower SuppliesDC DrivesPower ToolsSynchronous RectifiersCommercial / industrial gradeAEC-Q101 qualification
товар відсутній
DI017N06PQ-AQDIOTEC SEMICONDUCTORDI017N06PQ-AQ-DIO SMD N channel transistors
товар відсутній
DI018C03PTDIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 17/-11A; Idm: 120÷-80A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 17/-11A
Pulsed drain current: 120...-80A
Power dissipation: 10.8W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 13/53.3mΩ
Mounting: SMD
Gate charge: 12/20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI018C03PTDIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 17/-11A; Idm: 120÷-80A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 17/-11A
Pulsed drain current: 120...-80A
Power dissipation: 10.8W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 13/53.3mΩ
Mounting: SMD
Gate charge: 12/20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DI018N65D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 54A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 54A
Power dissipation: 142W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI018N65D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 54A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 54A
Power dissipation: 142W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DI020N06D1Diotec SemiconductorTrans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
товар відсутній
DI020N06D1Diotec SemiconductorMOSFET MOSFET, DPAK, 60V, 20A, 175C, N
на замовлення 1721 шт:
термін постачання 21-30 дні (днів)
7+45.04 грн
10+ 34.77 грн
100+ 18.1 грн
500+ 17.91 грн
1000+ 17.39 грн
2500+ 15.38 грн
5000+ 14.41 грн
Мінімальне замовлення: 7
DI020N06D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 45W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
20+18.27 грн
25+ 14.19 грн
76+ 10.34 грн
209+ 9.73 грн
Мінімальне замовлення: 20
DI020N06D1Diotec SemiconductorDescription: MOSFET DPAK N 60V 0.024OHM 175C
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
на замовлення 2425 шт:
термін постачання 21-31 дні (днів)
9+33.69 грн
10+ 27.58 грн
100+ 19.16 грн
500+ 14.04 грн
1000+ 11.41 грн
Мінімальне замовлення: 9
DI020N06D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 45W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2500 шт:
термін постачання 7-14 дні (днів)
12+21.93 грн
25+ 17.69 грн
76+ 12.41 грн
209+ 11.68 грн
Мінімальне замовлення: 12
DI020N06D1Diotec SemiconductorTrans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
товар відсутній
DI020N06D1Diotec SemiconductorDI020N06D1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+9.54 грн
Мінімальне замовлення: 2500
DI020N06D1Diotec SemiconductorDescription: MOSFET DPAK N 60V 0.024OHM 175C
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
товар відсутній
DI020N06D1Diotec SemiconductorTrans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+10.94 грн
Мінімальне замовлення: 2500
DI020N06D1-AQDiotec SemiconductorMOSFET MOSFET, DPAK, 60V, 20A, 150C, N, AEC-Q101
на замовлення 2261 шт:
термін постачання 21-30 дні (днів)
7+49.96 грн
10+ 38.51 грн
100+ 20.12 грн
500+ 19.86 грн
1000+ 19.27 грн
2500+ 17 грн
5000+ 15.96 грн
Мінімальне замовлення: 7
DI020N06D1-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 50A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 50A
Power dissipation: 25W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI020N06D1-AQDiotec SemiconductorDescription: MOSFET DPAK N 60V 0.034OHM 150C
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
товар відсутній
DI020N06D1-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 50A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 50A
Power dissipation: 25W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI020N06D1-AQDiotec SemiconductorDescription: MOSFET DPAK N 60V 0.034OHM 150C
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
товар відсутній
DI020P06PTDiotec SemiconductorDescription: MOSFET PWRQFN 3X3 -60V 0.045OHM
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Power Dissipation (Max): 29.7W
Supplier Device Package: PowerQFN 3x3
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+26.07 грн
Мінімальне замовлення: 5000
DI020P06PTDiotec SemiconductorP-Channel Power MOSFETP-Kanal Leistungs-MOSFET
товар відсутній
DI020P06PTDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, -60V, -20A, 150C, P
товар відсутній
DI020P06PTDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Drain-source voltage: -60V
Drain current: -20A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 29.7W
товар відсутній
DI020P06PTDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Drain-source voltage: -60V
Drain current: -20A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 29.7W
кількість в упаковці: 1 шт
товар відсутній
DI020P06PTDiotec SemiconductorDescription: MOSFET PWRQFN 3X3 -60V 0.045OHM
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Power Dissipation (Max): 29.7W
Supplier Device Package: PowerQFN 3x3
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+65.98 грн
10+ 52.11 грн
100+ 40.55 грн
500+ 32.25 грн
1000+ 26.28 грн
2000+ 24.74 грн
Мінімальне замовлення: 5
DI020P06PT-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, -60V, -20A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Power Dissipation (Max): 29.7W
Supplier Device Package: 8-QFN (3x3)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+32.32 грн
Мінімальне замовлення: 5000
DI020P06PT-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, -60V, -20A, 150C, P, AEC-Q101
товар відсутній
DI020P06PT-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Drain-source voltage: -60V
Drain current: -20A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 29.7W
товар відсутній
DI020P06PT-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Drain-source voltage: -60V
Drain current: -20A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 29.7W
кількість в упаковці: 1 шт
товар відсутній
DI020P06PT-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, -60V, -20A
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Power Dissipation (Max): 29.7W
Supplier Device Package: 8-QFN (3x3)
Package / Case: 8-PowerVDFN
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
4+82.13 грн
10+ 64.69 грн
100+ 50.28 грн
500+ 39.99 грн
1000+ 32.58 грн
2000+ 30.67 грн
Мінімальне замовлення: 4
DI025N06PTDiotec SemiconductorN-Channel Power MOSFETN-Kanal Leistungs-MOSFET
товар відсутній
DI025N06PTDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V
товар відсутній
DI025N06PTDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, 65V, 25A, 150C, N
товар відсутній
DI025N06PTDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 15A
Pulsed drain current: 80A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI025N06PTDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 15A
Pulsed drain current: 80A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DI025N06PT-AQDiotec SemiconductorDescription: MOSFET POWERQFN 3X3 65V 0.02OHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V
Qualification: AEC-Q101
товар відсутній
DI025N06PT-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, 65V, 25A, 150C, N, AEC-Q101
товар відсутній
DI025N06PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 15A
Pulsed drain current: 80A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI025N06PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 15A
Pulsed drain current: 80A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI025N06PT-AQDiotec SemiconductorMOSFET, PowerQFN 3x3, 65V, 25A, 150C, N
товар відсутній
DI025N06PT-AQDiotec SemiconductorDescription: MOSFET POWERQFN 3X3 65V 0.02OHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V
Qualification: AEC-Q101
товар відсутній
DI025N20PQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 0, 200V, 25A, 0.048?
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
2+227.87 грн
10+ 175.36 грн
100+ 91.49 грн
500+ 90.85 грн
1000+ 88.25 грн
2500+ 77.87 грн
5000+ 73.32 грн
Мінімальне замовлення: 2
DI025N20PQDiotec SemiconductorN-Channel Power MOSFETN-Kanal Leistungs-MOSFET
товар відсутній
DI028N10PQ2-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 130A; 32.7W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Pulsed drain current: 130A
Power dissipation: 32.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI028N10PQ2-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 130A; 32.7W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Pulsed drain current: 130A
Power dissipation: 32.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI028N10PQ2-AQDiotec SemiconductorMOSFETs (Field Effect Transistors)
товар відсутній
DI028P03PTDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V
товар відсутній
DI028P03PTDiotec SemiconductorTrans MOSFET P-CH 30V 28A T/R
товар відсутній
DI028P03PTDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, -30V, -28A, 150C, P
товар відсутній
DI028P03PTDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -28A; Idm: -80A; 40W; QFN3X3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -28A
Pulsed drain current: -80A
Power dissipation: 40W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI028P03PTDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -28A; Idm: -80A; 40W; QFN3X3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -28A
Pulsed drain current: -80A
Power dissipation: 40W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
DI030N03D1Diotec SemiconductorDI030N03D1
товар відсутній
DI030N03D1Diotec SemiconductorDescription: MOSFET DPAK N 30V 0.01OHM 175C
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
товар відсутній
DI030N03D1Diotec SemiconductorMOSFET MOSFET, DPAK, 30V, 30A, 175C, N
товар відсутній
DI030N03D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 80A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 40W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI030N03D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 80A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 40W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DI030N03D1Diotec SemiconductorDescription: MOSFET DPAK N 30V 0.01OHM 175C
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
товар відсутній
DI032N03PTKDiotec SemiconductorDescription: IC
Packaging: Bulk
товар відсутній
DI035N10PTDiotec SemiconductorDescription: MOSFET POWERQFN 3X3 N 100V 35A 0
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
товар відсутній
DI035N10PTDiotec SemiconductorMOSFET, PowerQFN 3x3, 100V, 35A, N, 25W
товар відсутній
DI035N10PTDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, 100V, 35A, 150C, N
товар відсутній
DI035N10PTDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 130A
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
товар відсутній
DI035N10PTDiotec SemiconductorDescription: MOSFET POWERQFN 3X3 N 100V 35A 0
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
товар відсутній
DI035N10PTDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 130A
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
кількість в упаковці: 1 шт
товар відсутній
DI035N10PT-AQDiotec SemiconductorDescription: MOSFET POWERQFN 3X3 N 100V 35A 0
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
Qualification: AEC-Q101
товар відсутній
DI035N10PT-AQDiotec SemiconductorMOSFET, PowerQFN 3x3, 100V, 35A, 0, 25W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+13.48 грн
Мінімальне замовлення: 5000
DI035N10PT-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, 100V, 35A, 150C, N, AEC-Q101
на замовлення 4666 шт:
термін постачання 21-30 дні (днів)
5+63.36 грн
10+ 49.1 грн
100+ 25.57 грн
500+ 25.31 грн
1000+ 24.53 грн
2500+ 21.67 грн
5000+ 20.38 грн
Мінімальне замовлення: 5
DI035N10PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 130A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI035N10PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 130A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5000 шт
товар відсутній
DI035N10PT-AQDiotec SemiconductorDescription: MOSFET POWERQFN 3X3 N 100V 35A 0
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
Qualification: AEC-Q101
товар відсутній
DI035P02PTDIOTEC SEMICONDUCTORDI035P02PT-DIO SMD P channel transistors
товар відсутній
DI035P02PTDiotec SemiconductorTrans MOSFET P-CH 20V 35A T/R
товар відсутній
DI035P04PTDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, -40V, -35A
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+25.06 грн
Мінімальне замовлення: 5000
DI035P04PTDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 40W; QFN3X3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
Case: QFN3X3
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 5000 шт
товар відсутній
DI035P04PTDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, -40V, -35A, P, 25W
товар відсутній
DI035P04PTDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 40W; QFN3X3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
Case: QFN3X3
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
товар відсутній
DI035P04PT-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 25W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 25W
кількість в упаковці: 1 шт
товар відсутній
DI035P04PT-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, -40V, -35A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
DI035P04PT-AQDiotec SemiconductorMOSFET, PowerQFN 3x3, -40V, -35A, 0, 25W
товар відсутній
DI035P04PT-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, -40V, -35A, P, 25W
товар відсутній
DI035P04PT-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 25W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 25W
товар відсутній
DI035P04PT-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, -40V, -35A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V
Qualification: AEC-Q101
на замовлення 4585 шт:
термін постачання 21-31 дні (днів)
7+41.41 грн
10+ 33.8 грн
100+ 23.54 грн
500+ 17.25 грн
1000+ 14.02 грн
2000+ 12.53 грн
Мінімальне замовлення: 7
DI036N20PQDiotec SemiconductorDescription: MOSFET, POWERQFN 5X6, 200V, 36A,
товар відсутній
DI036N20PQDiotec SemiconductorMOSFET, PowerQFN 5x6, 200V, 36A, 0, 125W
товар відсутній
DI038N04PQ2Diotec SemiconductorDescription: MOSFET, 45V, 38A, N, 31W
товар відсутній
DI038N04PQ2Diotec SemiconductorDescription: MOSFET, 45V, 38A, N, 31W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+43.09 грн
Мінімальне замовлення: 5000
DI038N04PQ2Diotec SemiconductorDual N-Channel Power MOSFET N-Kanal Leistungs-Doppel-MOSFET
товар відсутній
DI038N04PQ2DIOTEC SEMICONDUCTORDI038N04PQ2-DIO Multi channel transistors
товар відсутній
DI038N04PQ2-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 45V, 38A, 150C, N, AEC-Q101
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
3+119.61 грн
10+ 92.53 грн
100+ 48.21 грн
500+ 47.76 грн
1000+ 46.2 грн
2500+ 40.88 грн
5000+ 38.41 грн
Мінімальне замовлення: 3
DI038N04PQ2-AQDiotec SemiconductorDescription: MOSFET, 45V, 38A, N, 31W
товар відсутній
DI038N04PQ2-AQDIOTEC SEMICONDUCTORDI038N04PQ2-AQ-DIO Multi channel transistors
товар відсутній
DI038N04PQ2-AQDiotec SemiconductorDescription: MOSFET, 45V, 38A, N, 31W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+46.17 грн
Мінімальне замовлення: 5000
DI040N03PTDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N
товар відсутній
DI040N03PTDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
товар відсутній
DI040N03PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5000 шт
товар відсутній
DI040N03PT-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, 30V, 40A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+13.16 грн
Мінімальне замовлення: 5000
DI040N03PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI040N03PT-AQDiotec SemiconductorDI045N03PTN-Channel Power MOSFETN-Kanal Leistungs-AEC-Q
товар відсутній
DI040N03PT-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N, AEC-Q101
товар відсутній
DI040N03PT-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, 30V, 40A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
7+41.41 грн
10+ 33.8 грн
100+ 23.54 грн
500+ 17.25 грн
1000+ 14.02 грн
2000+ 12.53 грн
Мінімальне замовлення: 7
DI040N03PT-AQDiotec SemiconductorDI045N03PTN-Channel Power MOSFETN-Kanal Leistungs-AEC-Q
товар відсутній
DI040P04D1DIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -160A; 52W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -160A
Power dissipation: 52W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DI040P04D1Diotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
товар відсутній
DI040P04D1DIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -160A; 52W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -160A
Power dissipation: 52W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI040P04D1Diotec SemiconductorMOSFET MOSFET, DPAK, -40V, -40A, 150C, P
товар відсутній
DI040P04D1-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -160A; 52W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -160A
Power dissipation: 52W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI040P04D1-AQDiotec SemiconductorDescription: MOSFET DPAK P -40V -40A 0.015? 1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
DI040P04D1-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -160A; 52W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -160A
Power dissipation: 52W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI040P04D1-AQDiotec SemiconductorDI040P04D1-AQ
товар відсутній
DI040P04D1-AQDiotec SemiconductorMOSFET MOSFET, DPAK, -40V, -40A, 150C, P, AEC-Q101
товар відсутній
DI040P04D1-AQDiotec SemiconductorDescription: MOSFET DPAK P -40V -40A 0.015? 1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
DI040P04PTDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, -40V, -40A, 150C, P
товар відсутній
DI040P04PTDiotec SemiconductorDescription: MOSFET POWERQFN 3X3 P -40V -40A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
товар відсутній
DI040P04PTDiotec SemiconductorDescription: MOSFET POWERQFN 3X3 P -40V -40A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
товар відсутній
DI040P04PTDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -160A; 22.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -160A
Power dissipation: 22.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DI040P04PTDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -160A; 22.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -160A
Power dissipation: 22.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI040P04PT-AQDiotec SemiconductorMOSFET, PowerQFN 3x3, -40V, -35A, 0, 25W
товар відсутній
DI040P04PT-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, -40V, -40A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
DI040P04PT-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -160A; 22.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -160A
Power dissipation: 22.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI040P04PT-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -160A; 22.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -160A
Power dissipation: 22.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI040P04PT-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, -40V, -40A, 150C, P, AEC-Q101
товар відсутній
DI040P04PT-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, -40V, -40A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
Qualification: AEC-Q101
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
6+54.75 грн
10+ 42.72 грн
100+ 33.2 грн
500+ 26.41 грн
1000+ 21.51 грн
2000+ 20.25 грн
Мінімальне замовлення: 6
DI045N03PTDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 280A
Power dissipation: 16W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 53/26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
DI045N03PTDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 280A
Power dissipation: 16W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 53/26nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI045N03PTDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, 30V, 45A, 150C, N
товар відсутній
DI045N03PTDiotec SemiconductorDescription: MOSFET POWERQFN 3X3 N 30V 45A 0.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V
Power Dissipation (Max): 16W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
товар відсутній
DI045N03PTDiotec SemiconductorDescription: MOSFET POWERQFN 3X3 N 30V 45A 0.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V
Power Dissipation (Max): 16W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
товар відсутній
DI045N03PT-AQDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V
Power Dissipation (Max): 16W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Qualification: AEC-Q101
товар відсутній
DI045N03PT-AQDiotec SemiconductorTrans MOSFET N-CH 30V 45A Automotive 8-Pin QFN EP T/R
товар відсутній
DI045N03PT-AQDiotec SemiconductorDI045N03PTN-Channel Power MOSFETN-Kanal Leistungs-MOSFETID25°C= 45 ARDS(on) 3.4 mΩTjmax= 150°CVDSS= 30 VPD= 16 WEAS= 55 mJ AEC-Q
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
DI045N03PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 280A
Power dissipation: 16W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5000 шт
товар відсутній
DI045N03PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 280A
Power dissipation: 16W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI045N03PT-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, 30V, 45A, 150C, N, AEC-Q101
товар відсутній
DI045N10PQDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2551 pF @ 50 V
товар відсутній
DI045N10PQ-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 400A
Power dissipation: 40W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI045N10PQ-AQDiotec SemiconductorDescription: MOSFET PWRQFN 5X6 100V 0.0065OHM
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Power Dissipation (Max): 110W
Supplier Device Package: PowerQFN 5x6
товар відсутній
DI045N10PQ-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 400A
Power dissipation: 40W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI045N10PQ-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 100V, 45A, 150C, N, AEC-Q101
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
2+169.58 грн
10+ 130.59 грн
100+ 68.13 грн
500+ 67.48 грн
1000+ 64.89 грн
2500+ 57.95 грн
5000+ 54.44 грн
Мінімальне замовлення: 2
DI045N10PQ-AQDiotec SemiconductorN-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 qualification
товар відсутній
DI045N10PQ-QDiotec SemiconductorN-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 qualification
товар відсутній
DI048N04PQ2Diotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 40V, 48A, 150C, N
товар відсутній
DI048N04PQ2DIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DI048N04PQ2DIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI048N04PQ2-AQDIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI048N04PQ2-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 5X6, 40V, 48A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+24.14 грн
Мінімальне замовлення: 5000
DI048N04PQ2-AQDIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI048N04PQ2-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 40V, 48A, 150C, N, AEC-Q101
товар відсутній
DI048N04PQ2-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 5X6, 40V, 48A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+61.77 грн
10+ 48.33 грн
100+ 37.55 грн
500+ 29.88 грн
1000+ 24.34 грн
2000+ 22.91 грн
Мінімальне замовлення: 5
DI048N04PQ2-AQDiotec SemiconductorMOSFET, PowerQFN 5x6, 40V, 48A, N, 28W
на замовлення 4700 шт:
термін постачання 21-31 дні (днів)
DI048N04PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 200A; 31W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 48.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
кількість в упаковці: 1 шт
товар відсутній
DI048N04PT-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, 40V, 48A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
6+50.54 грн
10+ 42.38 грн
100+ 29.35 грн
500+ 23.01 грн
1000+ 19.58 грн
2000+ 17.44 грн
Мінімальне замовлення: 6
DI048N04PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 200A; 31W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 48.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
товар відсутній
DI048N04PT-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, 40V, 48A, 150C, N, AEC-Q101
товар відсутній
DI048N04PT-AQDiotec SemiconductorMOSFET, PowerAEC-Q Qualified
товар відсутній
DI048N04PT-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, 40V, 48A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+18.29 грн
Мінімальне замовлення: 5000
DI049N06PTKDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V
товар відсутній
DI049N06PTKDIOTEC SEMICONDUCTORDI049N06PTK-DIO SMD N channel transistors
товар відсутній
DI049N06PTKDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, 65V, 49A, 150C, N
товар відсутній
DI049N06PTK-AQDiotec SemiconductorN-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 qualification
товар відсутній
DI049N06PTK-AQDIOTEC SEMICONDUCTORDI049N06PTK-AQ-DIO SMD N channel transistors
товар відсутній
DI049N06PTK-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, 65V, 49A, 150C, N, AEC-Q101
товар відсутній
DI049N06PTK-AQDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V
Qualification: AEC-Q101
товар відсутній
DI04SApemDIP Switches/SIP Switches 4P SPST
товар відсутній
DI050N04PTDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
товар відсутній
DI050N04PTDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, 40V, 50A, 150C, N
товар відсутній
DI050N04PTDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 140A; 37W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 37W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI050N04PTDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 140A; 37W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 37W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
DI050N04PT-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, 40V, 50A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
6+50.54 грн
10+ 42.38 грн
100+ 29.35 грн
500+ 23.01 грн
1000+ 19.58 грн
2000+ 17.44 грн
Мінімальне замовлення: 6
DI050N04PT-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, 40V, 50A, 150C, N, AEC-Q101
товар відсутній
DI050N04PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 140A; 37W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 37W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI050N04PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 140A; 37W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 37W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5000 шт
товар відсутній
DI050N04PT-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, 40V, 50A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+18.29 грн
Мінімальне замовлення: 5000
DI050N04PT-AQDiotec SemiconductorMOSFET, PowerQFN 3x3, 40V, 50A, 0, 37W
товар відсутній
DI050N06D1Diotec SemiconductorDescription: MOSFET, DPAK, 60V, 50A, 0, 42W
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
на замовлення 2383 шт:
термін постачання 21-31 дні (днів)
7+45.63 грн
10+ 37.85 грн
100+ 26.19 грн
500+ 20.53 грн
1000+ 17.47 грн
Мінімальне замовлення: 7
DI050N06D1Diotec SemiconductorDescription: MOSFET, DPAK, 60V, 50A, 0, 42W
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
товар відсутній
DI050N06D1Diotec SemiconductorMOSFET MOSFET, DPAK, 60V, 50A, 150C, N
товар відсутній
DI050N06D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 42W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2092 шт:
термін постачання 7-14 дні (днів)
5+62.02 грн
9+ 30.32 грн
25+ 26.36 грн
47+ 20.2 грн
128+ 19.06 грн
Мінімальне замовлення: 5
DI050N06D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 42W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2092 шт:
термін постачання 21-30 дні (днів)
8+51.68 грн
14+ 24.33 грн
25+ 21.97 грн
47+ 16.83 грн
128+ 15.88 грн
Мінімальне замовлення: 8
DI050N06D1-AQDiotec SemiconductorDescription: MOSFET DPAK N 60V 50A 0.0085OHM
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
6+53.35 грн
10+ 44.21 грн
100+ 30.59 грн
500+ 23.98 грн
1000+ 20.41 грн
Мінімальне замовлення: 6
DI050N06D1-AQDiotec SemiconductorN-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 compliant
товар відсутній
DI050N06D1-AQDiotec SemiconductorDescription: MOSFET DPAK N 60V 50A 0.0085OHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+20.11 грн
Мінімальне замовлення: 2500
DI050N06D1-AQDiotec SemiconductorMOSFET MOSFET, DPAK, 60V, 50A, 150C, N, AEC-Q101
товар відсутній
DI050N06D1-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 42W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI050N06D1-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 42W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI050P02PTDIOTEC SEMICONDUCTORDI050P02PT-DIO SMD P channel transistors
товар відсутній
DI050P03PTDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, -30V, -50A, 150C, P
товар відсутній
DI050P03PTDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -30V
Drain current: -50A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 39W
товар відсутній
DI050P03PTDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, -30V, -50A
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Power Dissipation (Max): 39W
Supplier Device Package: PowerQFN 3x3
Part Status: Active
товар відсутній
DI050P03PTDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -30V
Drain current: -50A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 39W
кількість в упаковці: 1 шт
товар відсутній
DI050P03PT-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 3X3, -30V, -50A
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Power Dissipation (Max): 39W
Supplier Device Package: PowerQFN 3x3
Part Status: Active
товар відсутній
DI050P03PT-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -30V
Drain current: -50A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 39W
кількість в упаковці: 1 шт
товар відсутній
DI050P03PT-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 3x3, -30V, -50A, 150C, P, AEC-Q101
товар відсутній
DI050P03PT-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -30V
Drain current: -50A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 39W
товар відсутній
DI050P03PT-AQDiotec SemiconductorMOSFET, PowerQFN 3x3, -30V, -50A, P, 39W
товар відсутній
DI052N04PQ2-AQDiotec SemiconductorDual N-Channel Power MOSFETN-Kanal Leistungs-Doppel-MOSFET
товар відсутній
DI060N06PQDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V
товар відсутній
DI064P04D1DIOTEC SEMICONDUCTORDI064P04D1-DIO SMD P channel transistors
товар відсутній
DI064P04D1-AQDIOTEC SEMICONDUCTORDI064P04D1-AQ-DIO SMD P channel transistors
товар відсутній
DI065N06PTDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1617 pF @ 30 V
товар відсутній
DI065N08D1-AQDiotec Semiconductor AGDescription: MOSFET, DPAK, N, 80V, 65A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 30 V
Qualification: AEC-Q101
товар відсутній
DI068N03PQDIOTEC SEMICONDUCTORDI068N03PQ-DIO SMD N channel transistors
товар відсутній
DI068N03PQDComponentsDescription: MOSFET, PowerQFN5x6, 30V
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: 150°C
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Power Dissipation (Max): 25W
Supplier Device Package: PowerQFN 5x6
Part Status: Active
товар відсутній
DI068N03PQ-AQDiotec SemiconductorMOSFET N Kanal
товар відсутній
DI068N03PQ-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 5X6, 30V, 68A,
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+24.82 грн
Мінімальне замовлення: 5000
DI068N03PQ-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 30V, 68A, 150C, N, AEC-Q101
товар відсутній
DI068N03PQ-AQDIOTEC SEMICONDUCTORDI068N03PQ-AQ-DIO SMD N channel transistors
товар відсутній
DI068P04D1DIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -43A; Idm: -300A; 54W
Drain-source voltage: -40V
Drain current: -43A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Kind of package: reel; tape
Case: DPAK; TO252AA
Gate charge: 125nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -300A
кількість в упаковці: 1 шт
товар відсутній
DI068P04D1DIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -43A; Idm: -300A; 54W
Drain-source voltage: -40V
Drain current: -43A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Kind of package: reel; tape
Case: DPAK; TO252AA
Gate charge: 125nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -300A
товар відсутній
DI068P04D1-AQDiotec SemiconductorDescription: MOSFET, DPAK, -40V, -68A, 0, 54W
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Power Dissipation (Max): 54W
Supplier Device Package: TO-252 (DPAK)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+47.43 грн
Мінімальне замовлення: 2500
DI068P04D1-AQDiotec SemiconductorP-Channel Power MOSFETP-Kanal Leistungs-MOSFETAEC-Q101 qualification
товар відсутній
DI068P04D1-AQDiotec SemiconductorDescription: MOSFET, DPAK, -40V, -68A, 0, 54W
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Power Dissipation (Max): 54W
Supplier Device Package: TO-252 (DPAK)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
3+105.29 грн
10+ 84.15 грн
100+ 66.97 грн
500+ 53.18 грн
1000+ 45.12 грн
Мінімальне замовлення: 3
DI068P04D1-AQDiotec SemiconductorMOSFET MOSFET, DPAK, -40V, -68A, 150C, P, AEC-Q101
на замовлення 2430 шт:
термін постачання 21-30 дні (днів)
2+212.73 грн
10+ 163.42 грн
100+ 85.01 грн
500+ 84.36 грн
1000+ 81.76 грн
2500+ 72.68 грн
5000+ 68.13 грн
Мінімальне замовлення: 2
DI068P04D1-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -43A; Idm: -300A; 54W
Drain-source voltage: -40V
Drain current: -43A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 54W
Polarisation: unipolar
Kind of package: reel; tape
Case: DPAK; TO252AA
Gate charge: 125nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -300A
кількість в упаковці: 1 шт
товар відсутній
DI068P04D1-AQDIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -43A; Idm: -300A; 54W
Drain-source voltage: -40V
Drain current: -43A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 54W
Polarisation: unipolar
Kind of package: reel; tape
Case: DPAK; TO252AA
Gate charge: 125nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -300A
товар відсутній
DI06W8-05MEAN WELLDI06W8-05 DC/DC Converters
товар відсутній
DI06W8-12MEAN WELLDI06W8-12 DC/DC Converters
товар відсутній
DI06W8-12MEAN WELLIsolated DC/DC Converters - Through Hole 6W 9-75Vin +/-12V +/-0-250mA 1x1 Regulated DIP
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
1+959.93 грн
10+ 932.04 грн
20+ 797.49 грн
50+ 772.83 грн
100+ 698.21 грн
200+ 685.23 грн
600+ 673.55 грн
DI06W8-15MEAN WELLDI06W8-15 DC/DC Converters
товар відсутній
DI070P04PQDIOTEC SEMICONDUCTORDI070P04PQ-DIO SMD P channel transistors
товар відсутній
DI070P04PQDiotec SemiconductorDescription: MOSFET, POWERQFN 5X6, -40V, -70A
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+82.06 грн
Мінімальне замовлення: 5000
DI070P04PQ-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 5X6, -40V, -70A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
DI070P04PQ-AQDiotec SemiconductorMOSFETs (Field Effect Transistors)
товар відсутній
DI070P04PQ-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 5X6, -40V, -70A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
3+105.29 грн
10+ 82.87 грн
100+ 64.44 грн
500+ 51.26 грн
1000+ 41.76 грн
2000+ 39.31 грн
Мінімальне замовлення: 3
DI070P04PQ-AQDIOTEC SEMICONDUCTORDI070P04PQ-AQ-DIO SMD P channel transistors
товар відсутній
DI074N06D1KDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V
товар відсутній
DI075N04PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 400A; 35.7W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 48A
Pulsed drain current: 400A
Power dissipation: 35.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI075N04PT-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 400A; 35.7W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 48A
Pulsed drain current: 400A
Power dissipation: 35.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI075N04PT-AQDiotec SemiconductorMOSFET, PowerQFN 3x3, 40V, 75A, 150C, N
товар відсутній
DI077P06D1DIOTEC SEMICONDUCTORDI077P06D1-DIO SMD P channel transistors
товар відсутній
DI080N03PQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 30V, 80A, 150C, N
товар відсутній
DI080N03PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 160A; 78W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 160A
Power dissipation: 78W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI080N03PQDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7460 pF @ 15 V
товар відсутній
DI080N03PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 160A; 78W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 160A
Power dissipation: 78W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
DI080N06PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 80A; Idm: 480A; 65.8W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 80A
Pulsed drain current: 480A
Power dissipation: 65.8W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
DI080N06PQDiotec SemiconductorDescription: MOSFET POWERQFN 5X6 N 65V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
3+139.68 грн
10+ 111.87 грн
100+ 89.03 грн
500+ 70.7 грн
1000+ 59.99 грн
2000+ 56.99 грн
Мінімальне замовлення: 3
DI080N06PQDiotec SemiconductorMOSFET, PowerQFN 5x6, 60V, 80A, 0, 80W
товар відсутній
DI080N06PQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 65V, 105A, 150C, N
товар відсутній
DI080N06PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 80A; Idm: 480A; 65.8W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 80A
Pulsed drain current: 480A
Power dissipation: 65.8W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI080N06PQDiotec SemiconductorDescription: MOSFET POWERQFN 5X6 N 65V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+60.69 грн
Мінімальне замовлення: 5000
DI080N06PQ-AQDiotec SemiconductorDescription: MOSFET POWERQFN 5X6 N 65V 105A 0
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V
Qualification: AEC-Q101
товар відсутній
DI080N06PQ-AQDiotec SemiconductorN-Channel Power MOSFET AEC-Q
товар відсутній
DI080N06PQ-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 65V, 105A, 150C, N, AEC-Q101
товар відсутній
DI080N06PQ-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 80A; Idm: 480A; 65.8W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 80A
Pulsed drain current: 480A
Power dissipation: 65.8W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI080N06PQ-AQDiotec SemiconductorDescription: MOSFET POWERQFN 5X6 N 65V 105A 0
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V
Qualification: AEC-Q101
товар відсутній
DI080N06PQ-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 80A; Idm: 480A; 65.8W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 80A
Pulsed drain current: 480A
Power dissipation: 65.8W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI087N03D1-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 420A; 41.67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 55A
Pulsed drain current: 420A
Power dissipation: 41.67W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI087N03D1-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 420A; 41.67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 55A
Pulsed drain current: 420A
Power dissipation: 41.67W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI0A35N06PGK-AQDiotec SemiconductorMOSFET MOSFET, DFN1006-3, 60V, 0.35A, 150C, N, AEC-Q101
на замовлення 10000 шт:
термін постачання 164-173 дні (днів)
6+54.81 грн
17+ 17.91 грн
100+ 11.16 грн
500+ 8.18 грн
1000+ 7.79 грн
2500+ 5 грн
5000+ 4.22 грн
Мінімальне замовлення: 6
DI0A4N45SQ2Diotec SemiconductorDescription: MOSFET SO-8 N 450V 4.5OHM 150C
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
DI0A4N45SQ2Diotec SemiconductorMOSFET MOSFET, SO-8, 450V, 0.4A, 150C, N
на замовлення 3980 шт:
термін постачання 21-30 дні (днів)
5+61.24 грн
10+ 47.53 грн
100+ 24.79 грн
500+ 24.59 грн
1000+ 23.75 грн
2000+ 21.02 грн
4000+ 19.73 грн
Мінімальне замовлення: 5
DI0A4N45SQ2Diotec SemiconductorDescription: MOSFET SO-8 N 450V 4.5OHM 150C
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
товар відсутній