Продукція > DI0
| Назва | Виробник | Інформація | Доступність | Ціна | ||||||||||||||
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| DI00002 | RAPESCO | Description: RAPESCO - DI00002 - Klebebandabroller, stoßfester Kunststoff, für Klebebänder mit den Abmessungen 50mm x 66mm tariffCode: 39269097 productTraceability: No Spendertyp: Band rohsCompliant: NA Länge: - euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: NA usEccn: EAR99 Produktpalette: - SVHC: No SVHC (14-Jun-2023) | на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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| DI001N65PTK | Diotec Semiconductor | MOSFETs PowerQFN 3x3, N, 650V, 1A, 1.6?, 150C | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI001N65PTK | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 650V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V Power Dissipation (Max): 31.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI001N65PTK-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 650V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V Power Dissipation (Max): 31.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI001N65PTK-AQ | Diotec Semiconductor | MOSFETs | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI003N03SQ2 | Diotec Semiconductor | MOSFETs MOSFET, SO-8, 30V, 3A, 150C, N | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI003N03SQ2 | Diotec Semiconductor | Description: MOSFET SO-8 N 30V 0.05OHM 150C Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Power - Max: 1.6W Current - Continuous Drain (Id) @ 25°C: 3A Supplier Device Package: 8-SO | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI003N03SQ2 | Diotec Semiconductor | Description: MOSFET SO-8 N 30V 0.05OHM 150C Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Power - Max: 1.6W Current - Continuous Drain (Id) @ 25°C: 3A Supplier Device Package: 8-SO | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI003N03SQ2 | DIOTEC | Description: DIOTEC - DI003N03SQ2 - Dual-MOSFET, Zweifach n-Kanal, 30 V, 3 A, 0.05 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.05ohm productTraceability: No Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI004N06PWK | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 16A; 1.65W; QFN2X2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Pulsed drain current: 16A Power dissipation: 1.65W Case: QFN2X2 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI004N06PWK-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 16A; 1.65W; QFN2X2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Pulsed drain current: 16A Power dissipation: 1.65W Case: QFN2X2 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI005C04PTK-AQ | DIOTEC | Description: DIOTEC - DI005C04PTK-AQ - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 5 A, 4 A, 0.035 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.06ohm Verlustleistung, p-Kanal: 11.3W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.035ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 11.3W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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| DI005C04PTK-AQ | Diotec Semiconductor | MOSFETs PowerQFN 3x3-Dual, N+P, 40V, 5A, 3.5m?, 150C, AEC-Q101 | на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| DI005C04PTK-AQ | Diotec Semiconductor | Description: DI005C04PTK-AQ Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 12.5W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V, 60mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI005C04PTK-AQ | DIOTEC | Description: DIOTEC - DI005C04PTK-AQ - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 5 A, 4 A, 0.035 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.06ohm Verlustleistung, p-Kanal: 11.3W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Anzahl der Pins: 8Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 0.035ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 11.3W Betriebstemperatur, max.: 150°C | на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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| DI005N03PW-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 2x2, 30V, 5A, 150C, N, AEC-Q101 | на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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| DI005N03PW-AQ | Diotec Semiconductor | Description: MOSFET N-CH 30V 5A 6-UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI005N03PW-AQ | Diotec Semiconductor | Description: MOSFET N-CH 30V 5A 6-UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 3428 шт: термін постачання 21-31 дні (днів) |
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| DI005N06SQ2 | DIOTEC | Description: DIOTEC - DI005N06SQ2 - Dual-MOSFET, Zweifach n-Kanal, 60 V, 5 A, 0.04 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.04ohm productTraceability: No Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 1.7W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI005N06SQ2 | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI005N06SQ2 | DIOTEC SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 1.3W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 30A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI005N06SQ2 | Diotec Semiconductor | MOSFETs MOSFET, SO-8, 60V, 5A, 150C, N | на замовлення 2087 шт: термін постачання 21-30 дні (днів) |
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| DI006H03SQ | Diotec Semiconductor | Description: MOSFET 2N/2P-CH 30V 6A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI006H03SQ | DIOTEC SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 4.8/-3.3A; 1.5W; SO8 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.8/-3.3A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40/80mΩ Mounting: SMD Gate charge: 11.7/11.4nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge Pulsed drain current: 60...-30A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI006H03SQ | Diotec Semiconductor | MOSFET MOSFET, SO-8, 30V, 6A, 150C, N+P | на замовлення 3975 шт: термін постачання 21-30 дні (днів) |
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| DI006H03SQ | Diotec Semiconductor | Description: MOSFET 2N/2P-CH 30V 6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 | на замовлення 3999 шт: термін постачання 21-31 дні (днів) |
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| DI006P02PW | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 2x2, -20V, -6A, 150C, P | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI006P02PW | Diotec Semiconductor | Description: MOSFET POWERQFN 2X2 P -20V -6A 0 Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1242 pF @ 10 V | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI006P02PW | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -36A; 2W; QFN2X2 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -36A Power dissipation: 2W Case: QFN2X2 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI006P02PW | Diotec Semiconductor | Description: MOSFET POWERQFN 2X2 P -20V -6A 0 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1242 pF @ 10 V | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI008N09SQ | Diotec Semiconductor | Description: MOSFET SO8 90V 8A 0.075OHM 150C Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A Power Dissipation (Max): 2W Supplier Device Package: 8-SO | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI008N09SQ | Diotec Semiconductor | Description: MOSFET SO8 90V 8A 0.075OHM 150C Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A Power Dissipation (Max): 2W Supplier Device Package: 8-SO | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI008N09SQ | DIOTEC | Description: DIOTEC - DI008N09SQ - Leistungs-MOSFET, n-Kanal, 90 V, 8 A, 0.075 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI008N09SQ | Diotec Semiconductor | MOSFETs MOSFET, SO-8, 90V, 8A, 150C, N | на замовлення 3920 шт: термін постачання 21-30 дні (днів) |
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| DI008N09SQ | DIOTEC | Description: DIOTEC - DI008N09SQ - Leistungs-MOSFET, n-Kanal, 90 V, 8 A, 0.075 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 90V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.075ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI0101 | ifm efector, inc. | Description: SENSOR SPST-NO CABLE Packaging: Box Package / Case: Cylinder, Threaded - M30 Output Type: SPST-NO Operating Temperature: -25°C ~ 80°C Termination Style: Cable Voltage - Supply: 20V ~ 250V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI010N03PW | Diotec Semiconductor | Description: MOSFET POWERQFN 2X2 N 30V 10A 0. Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI010N03PW | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 2x2, 30V, 10A, 150C, N | на замовлення 6800 шт: термін постачання 21-30 дні (днів) |
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| DI010N03PW | Diotec Semiconductor | Description: MOSFET POWERQFN 2X2 N 30V 10A 0. Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI010N03PW-AQ | DIOTEC SEMICONDUCTOR | Description: DIOTEC SEMICONDUCTOR - DI010N03PW-AQ - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.012 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1.4W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.012ohm SVHC: No SVHC (25-Jun-2025) | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI010N03PW-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 2X2 N 30V Packaging: Bulk Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-QFN (2x2) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI010N03PW-AQ | DIOTEC SEMICONDUCTOR | Description: DIOTEC SEMICONDUCTOR - DI010N03PW-AQ - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.012 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.012ohm SVHC: No SVHC (25-Jun-2025) | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| DI010N03PW-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 2x2, 30V, 10A, 150C, N, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI012N10PQK2 | DIOTEC SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 12A; Idm: 48A; 25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 48A Power dissipation: 25W Case: Dual PQFN5X6 On-state resistance: 0.1Ω Mounting: SMD Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI012N60D1 | Diotec Semiconductor | Description: MOSFET N-CH 600V 12A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3, DPak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 150 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI014N03SQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 90V; 8A; Idm: 23A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 90V Drain current: 8A Pulsed drain current: 23A Power dissipation: 2W Case: SO8 On-state resistance: 75mΩ Mounting: SMD Gate charge: 12nC Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI014N25D1-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 28A; 73.5W Mounting: SMD On-state resistance: 0.28Ω Drain current: 10A Power dissipation: 73.5W Pulsed drain current: 28A Drain-source voltage: 250V Application: automotive industry Case: DPAK; TO252AA Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI014N25D1-AQ | Diotec Semiconductor | Description: MOSFET DPAK N 250V 15A Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 15A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI015N25D1 | Diotec Semiconductor | Description: MOSFET DPAK N 250V 0.2OHM 175C Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 255mOhm @ 15A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 125 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI015N25D1 | DIOTEC | Description: DIOTEC - DI015N25D1 - Leistungs-MOSFET, n-Kanal, 250 V, 15 A, 0.255 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 250V rohsCompliant: Y-EX Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.255ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI015N25D1 | Diotec Semiconductor | Description: MOSFET DPAK N 250V 0.2OHM 175C Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 255mOhm @ 15A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 125 V | на замовлення 2482 шт: термін постачання 21-31 дні (днів) |
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| DI015N65D2 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 57.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Pulsed drain current: 60A Power dissipation: 57.6W Case: D2PAK; TO263AB On-state resistance: 181Ω Mounting: SMD Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI015N65D2 | Diotec Semiconductor | D2PAK, N, 650V, 15A, | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI015N65D2-AQ | Diotec Semiconductor | D2PAK, N, 650V, 15A, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI015N65D2-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 57.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Pulsed drain current: 60A Power dissipation: 57.6W Case: D2PAK; TO263AB On-state resistance: 181Ω Mounting: SMD Kind of channel: enhancement Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI016N06PQ2-AQ | Diotec Semiconductor | Description: MOSFET 2N-CH 60V 16A 8TDSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 30V Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI017N06PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 50A Drain current: 10A Drain-source voltage: 60V Gate charge: 19nC On-state resistance: 39mΩ Gate-source voltage: ±20V Power dissipation: 21W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI017N06PQ-AQ | DIOTEC | Description: DIOTEC - DI017N06PQ-AQ - Leistungs-MOSFET, n-Kanal, 60 V, 17 A, 0.033 ohm, QFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI017N06PQ-AQ | DIOTEC | Description: DIOTEC - DI017N06PQ-AQ - Leistungs-MOSFET, n-Kanal, 60 V, 17 A, 0.033 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 21W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.033ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI017N06PQ-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: 50A Drain current: 10A Drain-source voltage: 60V Gate charge: 19nC On-state resistance: 39mΩ Gate-source voltage: ±20V Power dissipation: 21W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI017N10D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 60A Power dissipation: 79W Case: DPAK Gate-source voltage: ±16V On-state resistance: 155mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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| DI018N65D1 | Diotec Semiconductor | Description: MOSFET N-CH 650V 18A TO-252-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI018N65D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 54A; 142W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 54A Power dissipation: 142W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI018N65D1 | Diotec Semiconductor | MOSFETs DPAK, N, 650V, 18A, 0.19?, 175C | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI020N06D1 | DIOTEC | Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R Substitute: DI020N06D1-DIO; DI020N06D1 TDI020N06D1 DIOTEC кількість в упаковці: 500 шт | на замовлення 2500 шт: термін постачання 28-31 дні (днів) |
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| DI020N06D1 | Diotec Semiconductor | Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R | на замовлення 2200 шт: термін постачання 21-31 дні (днів) |
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| DI020N06D1 | DIOTEC | Description: DIOTEC - DI020N06D1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.035 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 45W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.035ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| DI020N06D1 | Diotec Semiconductor | Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI020N06D1 | Diotec Semiconductor | Description: MOSFET DPAK N 60V 0.024OHM 175C Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI020N06D1 | Diotec Semiconductor | MOSFETs MOSFET, DPAK, 60V, 20A, 175C, N | на замовлення 912 шт: термін постачання 21-30 дні (днів) |
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| DI020N06D1 | Diotec Semiconductor | Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI020N06D1 | Diotec Semiconductor | Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI020N06D1 | Diotec Semiconductor | Description: MOSFET DPAK N 60V 0.024OHM 175C Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI020N06D1 | DIOTEC | Description: DIOTEC - DI020N06D1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.035 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| DI020N06D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 45W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 581 шт: термін постачання 14-30 дні (днів) |
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| DI020N06D1 | Diotec Semiconductor | Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R | на замовлення 2200 шт: термін постачання 21-31 дні (днів) |
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| DI020N06D1-AQ | DIOTEC | Description: DIOTEC - DI020N06D1-AQ - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.034 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 25W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.034ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI020N06D1-AQ | Diotec Semiconductor | Description: MOSFET DPAK N 60V 0.034OHM 150C Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V Qualification: AEC-Q101 | на замовлення 484 шт: термін постачання 21-31 дні (днів) |
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| DI020N06D1-AQ | Diotec Semiconductor | Description: MOSFET DPAK N 60V 0.034OHM 150C Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI020N06D1-AQ | Diotec Semiconductor | MOSFETs MOSFET, DPAK, 60V, 20A, 150C, N, AEC-Q101 | на замовлення 1799 шт: термін постачання 21-30 дні (днів) |
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| DI020N06D1-AQ | DIOTEC | Description: DIOTEC - DI020N06D1-AQ - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.034 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI020P06PT | Diotec Semiconductor | Description: MOSFET PWRQFN 3X3 -60V 0.045OHM Packaging: Tape & Reel (TR) Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A Power Dissipation (Max): 29.7W Supplier Device Package: PowerQFN 3x3 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI020P06PT | DIOTEC | Description: DIOTEC - DI020P06PT - Leistungs-MOSFET, p-Kanal, 60 V, 20 A, 0.045 ohm, QFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI020P06PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -60V, -20A, 150C, P | на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| DI020P06PT | DIOTEC | Description: DIOTEC - DI020P06PT - Leistungs-MOSFET, p-Kanal, 60 V, 20 A, 0.045 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 35.7W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI020P06PT | Diotec Semiconductor | Description: MOSFET PWRQFN 3X3 -60V 0.045OHM Packaging: Cut Tape (CT) Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A Power Dissipation (Max): 29.7W Supplier Device Package: PowerQFN 3x3 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI020P06PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -60V, -20A, 150C, P, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI020P06PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, -60V, -20A Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A Power Dissipation (Max): 29.7W Supplier Device Package: 8-QFN (3x3) Grade: Automotive Qualification: AEC-Q101 | на замовлення 2433 шт: термін постачання 21-31 дні (днів) |
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| DI020P06PT-AQ | DIOTEC | Description: DIOTEC - DI020P06PT-AQ - Leistungs-MOSFET, p-Kanal, 60 V, 20 A, 0.045 ohm, QFN, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| DI020P06PT-AQ | DIOTEC | Description: DIOTEC - DI020P06PT-AQ - Leistungs-MOSFET, p-Kanal, 60 V, 20 A, 0.045 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 35.7W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| DI020P06PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, -60V, -20A Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A Power Dissipation (Max): 29.7W Supplier Device Package: 8-QFN (3x3) Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI022N20PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Drain current: 13A Drain-source voltage: 200V Gate charge: 16nC On-state resistance: 50mΩ Gate-source voltage: ±20V Power dissipation: 60W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI022N20PQ-AQ | Diotec Semiconductor | MOSFETs PowerQFN 5x6, N, 200V, 22A, 42m?, 150C, AEC-Q101 | на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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| DI022N20PQ-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: 80A Drain current: 13A Drain-source voltage: 200V Gate charge: 16nC On-state resistance: 50mΩ Gate-source voltage: ±20V Power dissipation: 60W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI025N06BPT | Diotec Semiconductor | PowerQFN 3x3, N, 65V, 25A, 21m, 175C | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI025N06BPT | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 25A; Idm: 100A; 20W; PQFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 25A Pulsed drain current: 100A Power dissipation: 20W Case: PQFN3X3 On-state resistance: 21mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI025N06PT | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 15A Pulsed drain current: 80A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI025N06PT | Diotec Semiconductor | Description: MOSFET N-CH 65V 25A 8-POWERVDFN Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI025N06PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 65V, 25A, 150C, N | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI025N06PT-AQ | Diotec Semiconductor | Description: MOSFET N-CH 65V 25A 8-POWERVDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI025N06PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 65V, 25A, 150C, N, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI025N06PT-AQ | Diotec Semiconductor | Description: MOSFET N-CH 65V 25A 8-POWERVDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V Qualification: AEC-Q101 | на замовлення 5276 шт: термін постачання 21-31 дні (днів) |
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| DI025N06PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 15A Pulsed drain current: 80A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI025N06PT-AQ | DIOTEC | Description: DIOTEC - DI025N06PT-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 25 A, 0.02 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 65V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 25W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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| DI025N20PQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 0, 200V, 25A, 0.048? | на замовлення 4889 шт: термін постачання 21-30 дні (днів) |
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| DI025N20PQ | Diotec Semiconductor | Description: MOSFET N , 200V 25A 48mW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI025N20PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 100A; 135W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 100A Drain current: 20A Drain-source voltage: 200V Gate charge: 28nC On-state resistance: 48mΩ Gate-source voltage: ±20V Power dissipation: 135W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI025N20PQ | Diotec Semiconductor | Description: MOSFET N , 200V 25A 48mW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI028N10PQ2 | Diotec Semiconductor | Description: DI028N10PQ2 Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32.7W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI028N10PQ2 | Diotec Semiconductor | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| DI028N10PQ2-AQ | DIOTEC | Description: DIOTEC - DI028N10PQ2-AQ - Dual-MOSFET, Zweifach n-Kanal, 100 V, 28 A, 0.021 ohm tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI028N10PQ2-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 100V, 28A, 150C, N, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI028N10PQ2-AQ | DIOTEC | Description: DIOTEC - DI028N10PQ2-AQ - Dual-MOSFET, Zweifach n-Kanal, 100 V, 28 A, 0.021 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 28A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm productTraceability: No Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 32.7W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI028N10PQ2-AQ | Diotec Semiconductor | Description: MOSFET 2N-CH 100V 28A 8TDSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32.7W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI028P03PT | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI028P03PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -30V, -28A, 150C, P | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI02H | Apem | DIP Switches/SIP Switches | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI030N03D1 | Diotec Semiconductor | MOSFETs MOSFET, DPAK, 30V, 30A, 175C, N | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI030N03D1 | Diotec Semiconductor | Description: MOSFET DPAK N 30V 0.01OHM 175C Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI030N03D1 | DIOTEC | Description: DIOTEC - DI030N03D1 - Leistungs-MOSFET, n-Kanal, 30 V, 30 A, 0.014 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 40W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.014ohm | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI030N03D1 | DIOTEC | Description: DIOTEC - DI030N03D1 - Leistungs-MOSFET, n-Kanal, 30 V, 30 A, 0.014 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 40W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.014ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI030N03D1 | Diotec Semiconductor | Description: MOSFET DPAK N 30V 0.01OHM 175C Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V | на замовлення 1502 шт: термін постачання 21-31 дні (днів) |
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| DI030N03D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 80A; 40W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Pulsed drain current: 80A Power dissipation: 40W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 17.5nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI032N03PTK | Diotec Semiconductor | Description: IC Packaging: Bulk | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI035N06PQ2 | Diotec Semiconductor | PowerQFN 5x6-Dual, N+N, 60V, 35A, 15m?, 175C | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI035N06PQ2 | Diotec Semiconductor | Description: MOSFET 2N-CH 60V 35A 8TDSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 35.7W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 782pF @ 30V Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI035N06PQ2-AQ | Diotec Semiconductor | MOSFETs | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI035N06PQ2-AQ | DIOTEC | Description: DIOTEC - DI035N06PQ2-AQ - Dual-MOSFET, Zweifach n-Kanal, 60 V, 35 A, 0.015 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 35A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.015ohm productTraceability: No Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 35.7W Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2024) | на замовлення 4998 шт: термін постачання 21-31 дні (днів) |
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| DI035N06PQ2-AQ | Diotec Semiconductor | Description: MOSFET 2N-CH 60V 35A 8TDSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 35.7W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 782pF @ 30V Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI035N06PQ2-AQ | DIOTEC | Description: DIOTEC - DI035N06PQ2-AQ - Dual-MOSFET, Zweifach n-Kanal, 60 V, 35 A, 0.015 ohm tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 4998 шт: термін постачання 21-31 дні (днів) |
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| DI035N10PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 100V 35A 0 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI035N10PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 100V 35A 0 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V | на замовлення 3988 шт: термін постачання 21-31 дні (днів) |
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| DI035N10PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 100V, 35A, 150C, N | на замовлення 3419 шт: термін постачання 21-30 дні (днів) |
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| DI035N10PT-AQ | DIOTEC | Description: DIOTEC - DI035N10PT-AQ - Leistungs-MOSFET, n-Kanal, 100 V, 35 A, 0.018 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 25W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 4924 шт: термін постачання 21-31 дні (днів) |
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| DI035N10PT-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 100V 35A 0 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI035N10PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 100V, 35A, 150C, N, AEC-Q101 | на замовлення 1713 шт: термін постачання 21-30 дні (днів) |
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| DI035N10PT-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 100V 35A 0 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V Qualification: AEC-Q101 | на замовлення 3789 шт: термін постачання 21-31 дні (днів) |
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| DI035P02PT | DIOTEC | Description: DIOTEC - DI035P02PT - Leistungs-MOSFET, p-Kanal, 20 V, 35 A, 3900 µohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: Y-EX Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 52W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3900µohm SVHC: No SVHC (21-Jan-2025) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI035P04PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -40V, -35A, 150C, P | на замовлення 1097 шт: термін постачання 21-30 дні (днів) |
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| DI035P04PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 P -40V -35A Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V | на замовлення 2321 шт: термін постачання 21-31 дні (днів) |
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| DI035P04PT | DIOTEC | Description: DIOTEC - DI035P04PT - Leistungs-MOSFET, p-Kanal, 40 V, 35 A, 0.019 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 4474 шт: термін постачання 21-31 дні (днів) |
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| DI035P04PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 P -40V -35A Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI035P04PT | DIOTEC | Description: DIOTEC - DI035P04PT - Leistungs-MOSFET, p-Kanal, 40 V, 35 A, 0.019 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 30W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.019ohm | на замовлення 4474 шт: термін постачання 21-31 дні (днів) |
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| DI035P04PT-AQ | DIOTEC | Description: DIOTEC - DI035P04PT-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 35 A, 0.019 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 30W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.019ohm | на замовлення 4954 шт: термін постачання 21-31 дні (днів) |
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| DI035P04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, -40V, -35A Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI035P04PT-AQ | DIOTEC | Description: DIOTEC - DI035P04PT-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 35 A, 0.019 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 4954 шт: термін постачання 21-31 дні (днів) |
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| DI035P04PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -40V, -35A, 150C, P, AEC-Q101 | на замовлення 3461 шт: термін постачання 21-30 дні (днів) |
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| DI035P04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, -40V, -35A Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V Qualification: AEC-Q101 | на замовлення 2876 шт: термін постачання 21-31 дні (днів) |
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| DI036N20PQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 5X6, 200V, 36A, | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI038N04PQ2 | Diotec Semiconductor | Description: MOSFET, 45V, 38A, N, 31W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI038N04PQ2 | Diotec Semiconductor | Description: MOSFET, 45V, 38A, N, 31W | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI038N04PQ2-AQ | Diotec Semiconductor | MOSFET MOSFET, PowerQFN 5x6, 45V, 38A, 150C, N, AEC-Q101 | на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| DI038N04PQ2-AQ | Diotec Semiconductor | Description: MOSFET, 45V, 38A, N, 31W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI038N04PQ2-AQ | Diotec Semiconductor | Description: MOSFET, 45V, 38A, N, 31W | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI040N03PT | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 120A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040N03PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N | на замовлення 4985 шт: термін постачання 21-30 дні (днів) |
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| DI040N03PT | Diotec Semiconductor | Description: MOSFET N-CH 30V 40A 8-POWERVDFN Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI040N03PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, 30V, 40A, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040N03PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 120A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | на замовлення 103 шт: термін постачання 14-30 дні (днів) |
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| DI040N03PT-AQ | Diotec Semiconductor | Trans MOSFET N-CH 30V 40A Automotive 8-Pin QFN EP T/R | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040N03PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N, AEC-Q101 | на замовлення 5005 шт: термін постачання 21-30 дні (днів) |
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| DI040N03PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, 30V, 40A, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V Qualification: AEC-Q101 | на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
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| DI040N03PT-AQ | DIOTEC | Description: DIOTEC - DI040N03PT-AQ - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 0.007 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.007ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI040N10D1 | Diotec Semiconductor | Description: MOSFET N-CH 100V 40A TO-252-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V Rds On (Max) @ Id, Vgs: 15mOhm @ 28A, 10V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040N10D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 160A; 140W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 160A Power dissipation: 140W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040N10D1 | Diotec Semiconductor | MOSFETs DPAK, N, 100V, 40A, 15m?, 175C | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040N10D1-AQ | Diotec Semiconductor | Description: MOSFET, DPAK, N, 100V, 40A, 17M, Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V Power Dissipation (Max): 37.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1192 pF @ 50 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040N10D1-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 160A; 37.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 160A Power dissipation: 37.5W Case: DPAK; TO252AA On-state resistance: 38.6mΩ Mounting: SMD Gate charge: 15.5nC Kind of channel: enhancement Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040N10D1-AQ | Diotec Semiconductor | MOSFETs MOSFET, DPAK, N, 100V, 40A, 17m, 175C, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040N10D1-AQ | Diotec Semiconductor | Description: MOSFET, DPAK, N, 100V, 40A, 17M, Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V Power Dissipation (Max): 37.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1192 pF @ 50 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040P04D1 | Diotec Semiconductor | MOSFETs MOSFET, DPAK, -40V, -40A, 150C, P | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040P04D1 | Diotec Semiconductor | Description: MOSFET DPAK P -40V -40A Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040P04D1-AQ | Diotec Semiconductor | Description: MOSFET DPAK P -40V -40A 0.015? 1 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V Qualification: AEC-Q101 | на замовлення 2485 шт: термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| DI040P04D1-AQ | DIOTEC | Description: DIOTEC - DI040P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.015 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 52W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
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| DI040P04D1-AQ | Diotec Semiconductor | Description: MOSFET DPAK P -40V -40A 0.015? 1 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V Qualification: AEC-Q101 | на замовлення 2485 шт: термін постачання 21-31 дні (днів) |
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| DI040P04D1-AQ | Diotec Semiconductor | MOSFETs MOSFET, DPAK, -40V, -40A, 150C, P, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040P04D1-AQ | DIOTEC | Description: DIOTEC - DI040P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.015 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 2493 шт: термін постачання 21-31 дні (днів) |
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| DI040P04PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 P -40V -40A Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040P04PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -40V, -40A, 150C, P | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040P04PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 P -40V -40A Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V | на замовлення 4839 шт: термін постачання 21-31 дні (днів) |
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| DI040P04PT-AQ | DIOTEC | Description: DIOTEC - DI040P04PT-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.015 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 31.2W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI040P04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, -40V, -40A Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 4983 шт: термін постачання 21-31 дні (днів) |
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| DI040P04PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -40V, -40A, 150C, P, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI040P04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, -40V, -40A Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI045N03PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 30V 45A 0. Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI045N03PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 30V, 45A, 150C, N | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI045N03PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 30V 45A 0. Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI045N03PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 30V, 45A, 150C, N, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI045N03PT-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 30V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI045N04PT-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 45V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 41.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI045N10PQ | Diotec Semiconductor | MOSFETs | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI045N10PQ | Diotec Semiconductor | Description: MOSFET N-CH 100V 45A 8-POWERTDFN Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2551 pF @ 50 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI045N10PQ-AQ | Diotec Semiconductor | Description: MOSFET N-CH 45A Packaging: Cut Tape (CT) Mounting Type: Surface Mount FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A Power Dissipation (Max): 110W Supplier Device Package: PowerQFN 5x6 Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI045N10PQ-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 100V, 45A, 150C, N, AEC-Q101 | на замовлення 2760 шт: термін постачання 21-30 дні (днів) |
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| DI045N10PQ-AQ | Diotec Semiconductor | Description: MOSFET N-CH 45A Packaging: Tape & Reel (TR) Mounting Type: Surface Mount FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A Power Dissipation (Max): 110W Supplier Device Package: PowerQFN 5x6 Grade: Automotive Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI045N10PQ-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: 400A Drain current: 39A Drain-source voltage: 100V Gate charge: 56nC On-state resistance: 9mΩ Gate-source voltage: ±20V Power dissipation: 40W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI045N10PQ-AQ | DIOTEC | Description: DIOTEC - DI045N10PQ-AQ - Leistungs-MOSFET, n-Kanal, 100 V, 45 A, 0.0065 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0065ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI045N10PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, N, 100 V, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI045N10PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, N, 100 V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI045N10PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, N, 100 V, 45 A, 9.5 m, 150C, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI048N04PQ-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 40V Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V Power Dissipation (Max): 35.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 20 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI048N04PQ2 | Diotec Semiconductor | Description: MOSFET 2N-CH 40V 48A 8TDSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI048N04PQ2 | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 40V, 48A, 150C, N | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI048N04PQ2 | DIOTEC | Description: DIOTEC - DI048N04PQ2 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 48 A, 0.096 ohm tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI048N04PQ2-AQ | Diotec Semiconductor | Description: MOSFET 2N-CH 40V 48A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | на замовлення 4950 шт: термін постачання 21-31 дні (днів) |
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| DI048N04PQ2-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 40V, 48A, 150C, N, AEC-Q101 | на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| DI048N04PQ2-AQ | DIOTEC | Description: DIOTEC - DI048N04PQ2-AQ - Dual-MOSFET, Zweifach n-Kanal, 40 V, 36 A, 0.096 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 36A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.096ohm productTraceability: No Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 24W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI048N04PQ2-AQ | Diotec Semiconductor | Description: MOSFET 2N-CH 40V 48A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI048N04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, 40V, 48A, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 4129 шт: термін постачання 21-31 дні (днів) |
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| DI048N04PT-AQ | DIOTEC | Description: DIOTEC - DI048N04PT-AQ - Leistungs-MOSFET, n-Kanal, 40 V, 48 A, 7600 µohm, QFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 48A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 37.5W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 7600µohm SVHC: No SVHC (25-Jun-2025) | на замовлення 4875 шт: термін постачання 21-31 дні (днів) |
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| DI048N04PT-AQ | Diotec Semiconductor | N-канальний ПТ, Udss, В = 40, Id = 48 А, Ciss, пФ @ Uds, В = 2268 @ 25, Qg, нКл = 48,5, Rds = 7,6 мОм, Ugs(th) = 2,5, Р, Вт = 31, Тексп, °C = -55...+150, Тип монт. = SMD,... Група товару: Транзистори Корпус: PowerVDFN-8 Од. вим: шт кількість в упаковці: 5000 шт | на замовлення 2 шт: термін постачання 3 дні (днів) |
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| DI048N04PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 40V, 48A, 150C, N, AEC-Q101 | на замовлення 4742 шт: термін постачання 21-30 дні (днів) |
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| DI048N04PT-AQ | DIOTEC | Description: DIOTEC - DI048N04PT-AQ - Leistungs-MOSFET, n-Kanal, 40 V, 48 A, 7600 µohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 48A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 37.5W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 7600µohm SVHC: No SVHC (25-Jun-2025) | на замовлення 4875 шт: термін постачання 21-31 дні (днів) |
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| DI048N04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, 40V, 48A, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI048N08PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 80V Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 30 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI049N06PTK | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 65V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI049N06PTK | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 65V, 49A, 150C, N | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI049N06PTK-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 65V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI049N06PTK-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 65V, 49A, 150C, N, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI04S | Apem | DIP Switches/SIP Switches 4P SPST | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050N04PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 40V, 50A, 150C, N | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050N04PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 40V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050N04PT-AQ | Diotec Semiconductor | N-канальний ПТ, Udss, В = 40, Id = 50 А, Ciss, пФ @ Uds, В = 3255, Qg, нКл = 59, Rds = 6,5 мОм, Ugs(th) = 1,7, Р, Вт = 37, Тексп, °C = -55...+150, Тип монт. = SMD,... Група товару: Транзистори Корпус: PowerQFN 3x3 Од. вим: шт кількість в упаковці: 5000 шт | на замовлення 4 шт: термін постачання 3 дні (днів) |
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| DI050N04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, 40V, 50A, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050N04PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 40V, 50A, 150C, N, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050N04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, 40V, 50A, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 4490 шт: термін постачання 21-31 дні (днів) |
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| DI050N04PT-AQ | DIOTEC | Description: DIOTEC - DI050N04PT-AQ - Leistungs-MOSFET, n-Kanal, 40 V, 50 A, 0.0057 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0057ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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| DI050N06D1 | Diotec Semiconductor | Description: MOSFET, DPAK, 60V, 50A, 0, 42W Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V | на замовлення 619 шт: термін постачання 21-31 дні (днів) |
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| DI050N06D1 | DIOTEC | Description: DIOTEC - DI050N06D1 - Leistungs-MOSFET, n-Kanal, 65 V, 50 A, 0.011 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI050N06D1 | Diotec Semiconductor | MOSFETs MOSFET, DPAK, 60V, 50A, 150C, N | на замовлення 377 шт: термін постачання 21-30 дні (днів) |
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| DI050N06D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 160A Power dissipation: 42W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 1309 шт: термін постачання 14-30 дні (днів) |
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| DI050N06D1 | DIOTEC | Description: DIOTEC - DI050N06D1 - Leistungs-MOSFET, n-Kanal, 65 V, 50 A, 0.011 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 65V rohsCompliant: Y-EX Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI050N06D1 | Diotec Semiconductor | Description: MOSFET, DPAK, 60V, 50A, 0, 42W Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050N06D1-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 160A Power dissipation: 42W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050N06D1-AQ | Diotec Semiconductor | Description: MOSFET N-CH 65V 50A TO-252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050N06D1-AQ | DIOTEC | Description: DIOTEC - DI050N06D1-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 50 A, 0.011 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI050N06D1-AQ | DIOTEC | Description: DIOTEC - DI050N06D1-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 50 A, 0.011 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 65V rohsCompliant: Y-EX Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI050N06D1-AQ | Diotec Semiconductor | Description: MOSFET N-CH 65V 50A TO-252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V Qualification: AEC-Q101 | на замовлення 2260 шт: термін постачання 21-31 дні (днів) |
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| DI050N06D1-AQ | Diotec Semiconductor | MOSFETs MOSFET, DPAK, 60V, 50A, 150C, N, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050N06D1-Q | Diotec Semiconductor | Description: MOSFET, DPAK, N, 60V, 50A Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3, DPak Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050N06D1-Q | Diotec Semiconductor | Description: MOSFET, DPAK, N, 60V, 50A Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3, DPak Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050N06PQ2-AQ | Diotec Semiconductor | MOSFETs PowerQFN 5x6-Dual, N+N, 60V, 50A, 8.5m?, 175C, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050N06PQ2-AQ | Diotec Semiconductor | Description: DI050N06PQ2-AQ Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Supplier Device Package: TDSON-8-4 Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 30V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Grade: Automotive Technology: MOSFET (Metal Oxide) Power - Max: 40.5W (Tc) Gate Charge (Qg) (Max) @ Vgs: 36.4nC @ 10V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050N06PQ2-AQ | DIOTEC SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Pulsed drain current: 280A Power dissipation: 40.5W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 36.4nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050P03PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -30V, -50A, 150C, P | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050P03PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 P -30V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3721 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050P03PT | DIOTEC | Description: DIOTEC - DI050P03PT - Leistungs-MOSFET, p-Kanal, 30 V, 50 A, 0.008 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 39W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.008ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI050P03PT-AQ | DIOTEC | Description: DIOTEC - DI050P03PT-AQ - Leistungs-MOSFET, p-Kanal, 30 V, 50 A, 0.008 ohm, QFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI050P03PT-AQ | DIOTEC | Description: DIOTEC - DI050P03PT-AQ - Leistungs-MOSFET, p-Kanal, 30 V, 50 A, 0.008 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 39W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.008ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI050P03PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -30V, -50A, 150C, P, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI050P03PT-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 P -30V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3721 pF @ 15 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI054N10D1-AQ | DIOTEC | Description: DIOTEC - DI054N10D1-AQ - Leistungs-MOSFET, n-Kanal, 100 V, 54 A, 0.0095 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 47.9W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0095ohm SVHC: No SVHC (27-Jun-2024) | на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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| DI054N10D1-AQ | DIOTEC | Description: DIOTEC - DI054N10D1-AQ - Leistungs-MOSFET, n-Kanal, 100 V, 54 A, 0.0095 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 47.9W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0095ohm | на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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| DI060N06PQ | Diotec Semiconductor | MOSFETs PowerQFN 5x6, N, 60V, 60A, 7m?, 150C | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI060N06PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 170A; 70W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Case: PQFN5X6 Mounting: SMD Kind of channel: enhancement Gate charge: 27nC On-state resistance: 7mΩ Power dissipation: 70W Pulsed drain current: 170A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI060N06PQ | Diotec Semiconductor | Description: MOSFET N-CH 60V 60A 8-POWERTDFN Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI060N10D1 | Diotec Semiconductor | MOSFETs | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI060N10D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 300A; 54.3W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 37A Pulsed drain current: 300A Power dissipation: 54.3W Case: DPAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 98 шт: термін постачання 14-30 дні (днів) |
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| DI064P04D1-AQ | DIOTEC | Description: DIOTEC - DI064P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 64 A, 7600 µohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR isCanonical: N hazardous: false Drain-Source-Durchgangswiderstand: 7600µohm rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (25-Jun-2025) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI064P04D1-AQ | DIOTEC | Description: DIOTEC - DI064P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 64 A, 7600 µohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 48.3W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 7600µohm SVHC: Lead (25-Jun-2025) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI065N06PT | Diotec Semiconductor | MOSFETs PowerQFN 3x3, N, 65V, 65A, 5m?, 150C | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI065N06PT | Diotec Semiconductor | Description: MOSFET N-CH 65V 65A 8-POWERVDFN Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1617 pF @ 30 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI065N08D1 | Diotec Semiconductor | MOSFETs DPAK, N, 80V, 65A, 7m?, 150C | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI065N08D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 300A; 62.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 300A Power dissipation: 62.5W Case: DPAK Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI065N08D1 | Diotec Semiconductor | Description: MOSFET N-CH 80V 65A TO-252-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 30 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI065N08D1-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 65A; Idm: 300A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 65A Pulsed drain current: 300A Power dissipation: 62.5W Case: DPAK; TO252AA On-state resistance: 7mΩ Mounting: SMD Gate charge: 35nC Kind of channel: enhancement Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI065N08D1-AQ | Diotec Semiconductor | Description: MOSFET N-CH 80V 65A TO-252-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 30 V Qualification: AEC-Q101 | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI065N08D1-AQ | Diotec Semiconductor | MOSFETs DPAK, N, 80V, 65A, 7m?, 175C, AEC-Q101 | на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| DI068N03PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 210A Drain current: 43A Drain-source voltage: 30V Gate charge: 79nC On-state resistance: 4mΩ Gate-source voltage: ±20V Power dissipation: 25W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement | на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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| DI068N03PQ | DComponents | Description: MOSFET, PowerQFN5x6, 30V Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: 150°C FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A Power Dissipation (Max): 25W Supplier Device Package: PowerQFN 5x6 Part Status: Active | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI068N03PQ-AQ | Diotec Semiconductor | MOSFET MOSFET, PowerQFN 5x6, 30V, 68A, 150C, N, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI068N03PQ-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: 210A Drain current: 43A Drain-source voltage: 30V Gate charge: 79nC On-state resistance: 4mΩ Gate-source voltage: ±20V Power dissipation: 25W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI068N03PQ-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 5X6, 30V, 68A, | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI068P04D1-AQ | DIOTEC | Description: DIOTEC - DI068P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 68 A, 0.0073 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI068P04D1-AQ | Diotec Semiconductor | Description: MOSFET P-CH 68A TO-252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 68A Power Dissipation (Max): 54W Supplier Device Package: TO-252 (DPAK) Grade: Automotive Qualification: AEC-Q101 | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI068P04D1-AQ | Diotec Semiconductor | MOSFETs MOSFET, DPAK, -40V, -68A, 150C, P, AEC-Q101 | на замовлення 2513 шт: термін постачання 21-30 дні (днів) |
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| DI068P04D1-AQ | Diotec Semiconductor | Description: MOSFET P-CH 68A TO-252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 68A Power Dissipation (Max): 54W Supplier Device Package: TO-252 (DPAK) Grade: Automotive Qualification: AEC-Q101 | на замовлення 2886 шт: термін постачання 21-31 дні (днів) |
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| DI06W8-05 | MEAN WELL | Isolated DC/DC Converters - Through Hole 6W 9-75Vin +/-5V +/-0-600mA 1x1 Regulated DIP | на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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| DI06W8-12 | MEAN WELL USA Inc. | Description: I/P: 9-75VDC;O/P:12V 250MA,1"*1" Packaging: Bulk Package / Case: 6-DIP Module, 5 Leads Size / Dimension: 1.00" L x 1.00" W x 0.40" H (25.4mm x 25.4mm x 10.2mm) Mounting Type: Through Hole Type: Isolated Module Operating Temperature: -40°C ~ 90°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 75V Approval Agency: CE, EAC, UKCA Efficiency: 85% Current - Output (Max): 250mA, 250mA Voltage - Input (Min): 9V Voltage - Output 1: 12V Voltage - Output 2: -12V Power (Watts): 6 W Number of Outputs: 2 Voltage - Isolation: 3 kV | на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| DI06W8-12 | MEAN WELL | DC/DC Converters - Through Hole 6W 9-75Vin +/-12V +/-0-250mA 1x1 Regulated DIP | на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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| DI06W8-15 | MEAN WELL | Isolated DC/DC Converters - Through Hole 6W 9-75Vin +/-15V +/-0-200mA 1x1 Regulated DIP | на замовлення 77 шт: термін постачання 21-30 дні (днів) |
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| DI06W8-15 | MEAN WELL USA Inc. | Description: I/P: 9-75VDC;O/P:15V 200MA,1"*1" Packaging: Bulk Package / Case: 6-DIP Module, 5 Leads Size / Dimension: 1.00" L x 1.00" W x 0.40" H (25.4mm x 25.4mm x 10.2mm) Mounting Type: Through Hole Type: Isolated Module Operating Temperature: -40°C ~ 90°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 75V Approval Agency: CE, EAC, UKCA Efficiency: 84.5% Current - Output (Max): 200mA, 200mA Voltage - Input (Min): 9V Voltage - Output 1: 15V Voltage - Output 2: -12V Power (Watts): 6 W Number of Outputs: 2 Voltage - Isolation: 3 kV | на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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| DI070P04PQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, -40V, -70A, 150C, P | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI070P04PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 P -40V Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI070P04PQ | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: -300A Drain current: -70A Drain-source voltage: -40V Gate charge: 125nC On-state resistance: 6.5mΩ Gate-source voltage: ±20V Power dissipation: 46W Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI070P04PQ-AQ | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: -300A Drain current: -70A Drain-source voltage: -40V Gate charge: 125nC On-state resistance: 6.5mΩ Gate-source voltage: ±20V Power dissipation: 46W Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI070P04PQ-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 5X6, -40V, -70A Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI070P04PQ-AQ | DIOTEC | Description: DIOTEC - DI070P04PQ-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 70 A, 0.0065 ohm, QFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | на замовлення 4985 шт: термін постачання 21-31 дні (днів) |
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| DI070P04PQ-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, -40V, -70A, 150C, P, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI070P04PQ-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 5X6, -40V, -70A Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 4018 шт: термін постачання 21-31 дні (днів) |
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| DI072N06PT | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 46A; Idm: 280A; 43W; QFN3X3 Case: QFN3X3 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 35nC On-state resistance: 7mΩ Power dissipation: 43W Drain current: 46A Pulsed drain current: 280A Gate-source voltage: ±20V Drain-source voltage: 65V | на замовлення 129 шт: термін постачання 14-30 дні (днів) |
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| DI072N06PT | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI074N06D1K | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 74A; Idm: 300A; 56.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 74A Pulsed drain current: 300A Power dissipation: 56.8W Case: DPAK; TO252AA On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 31nC Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI074N06D1K | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI075N04PT-AQ | Diotec Semiconductor | Description: MOSFET N-CH 40V 75A 8-POWERVDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V Power Dissipation (Max): 35.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI075N04PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 40V, 75A, 150C, N, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI075N04PT-AQ | Diotec Semiconductor | N-канальний ПТ, Udss, В = 40, Id = 75 А, Ciss, пФ @ Uds, В = 2936 @ 25, Qg, нКл = 46, Rds = 2,8 мОм, Ugs(th) = 2,5 В, Р, Вт = 35,7, Тексп, °C = -55...+155, Тип монт. = SMD,... Група товару: Транзистори Корпус: PowerVDFN-8 Од. вим: шт кількість в упаковці: 5000 шт | на замовлення 60 шт: термін постачання 3 дні (днів) |
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| DI075N04PT-AQ | Diotec Semiconductor | Description: MOSFET N-CH 40V 75A 8-POWERVDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V Power Dissipation (Max): 35.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V Qualification: AEC-Q101 | на замовлення 4445 шт: термін постачання 21-31 дні (днів) |
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| DI075N08PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 350A Drain current: 47A Drain-source voltage: 80V Gate charge: 89nC On-state resistance: 4.2mΩ Gate-source voltage: ±20V Power dissipation: 45W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI075N08PQ | Diotec Semiconductor | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| DI080N03PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 30V Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7460 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI080N03PQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 30V, 80A, 150C, N | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI080N03PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 160A; 78W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 160A Drain current: 75A Drain-source voltage: 30V Gate charge: 21nC On-state resistance: 1.9mΩ Gate-source voltage: ±20V Power dissipation: 78W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI080N06PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 65V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI080N06PQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 65V, 105A, 150C, N | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI080N06PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 80A; Idm: 480A; 65.8W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 80A Pulsed drain current: 480A Power dissipation: 65.8W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 78.5nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI080N06PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 65V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI080N06PQ-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 65V 105A 0 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI080N06PQ-AQ | DIOTEC SEMICONDUCTOR | Description: DIOTEC SEMICONDUCTOR - DI080N06PQ-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 105 A, 3000 µohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 65V rohsCompliant: Y-EX Dauer-Drainstrom Id: 105A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 65.8W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3000µohm SVHC: No SVHC (27-Jun-2024) | на замовлення 4860 шт: термін постачання 21-31 дні (днів) |
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| DI080N06PQ-AQ | Diotec Semiconductor | Trans MOSFET N-CH 60V 80A 8-Pin QFN EP T/R Automotive AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI080N06PQ-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 65V, 105A, 150C, N, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI080N06PQ-AQ | Diotec Semiconductor | DI080N06PQ-AQ | на замовлення 3750 шт: термін постачання 21-31 дні (днів) |
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| DI080N06PQ-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 65V 105A 0 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V Qualification: AEC-Q101 | на замовлення 3845 шт: термін постачання 21-31 дні (днів) |
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| DI080N06PQ-AQ | DIOTEC SEMICONDUCTOR | Description: DIOTEC SEMICONDUCTOR - DI080N06PQ-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 105 A, 3000 µohm, QFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 65V rohsCompliant: Y-EX Dauer-Drainstrom Id: 105A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 65.8W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3000µohm | на замовлення 4860 шт: термін постачання 21-31 дні (днів) |
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| DI080N06PQ-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 80A; Idm: 480A; 65.8W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 80A Pulsed drain current: 480A Power dissipation: 65.8W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 78.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI080N10D1 | Diotec Semiconductor | MOSFETs DPAK, N, 100V, 80A, 4.2m?, 150C | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI080N10D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 400A; 56.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 400A Power dissipation: 56.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI080N10PQ-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 480A; 60W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Pulsed drain current: 480A Power dissipation: 60W Case: PQFN5X6 On-state resistance: 5mΩ Mounting: SMD Gate charge: 75nC Kind of channel: enhancement Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI080N10PQ-AQ | Diotec Semiconductor | Description: MOSFET N-CH 100V 80A 8-POWERTDFN Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3742 pF @ 50 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI080N10PQ-AQ | Diotec Semiconductor | MOSFETs PowerQFN 5x6, N, 100V, 80A, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI087N03D1-AQ | Diotec Semiconductor | MOSFETs MOSFET, DPAK, 30V, 87A, 150C, N, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI090N15D2 | Diotec Semiconductor | D2PAK, N, 150V, 90A, 12m, 175C | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI090N15D2 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 90A; Idm: 360A; 266W Drain current: 90A Pulsed drain current: 360A Case: D2PAK; TO263AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 54nC On-state resistance: 12mΩ Drain-source voltage: 150V Power dissipation: 266W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI090N15D2-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 90A; Idm: 360A; 266W Drain current: 90A Pulsed drain current: 360A Application: automotive industry Case: D2PAK; TO263AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 54nC On-state resistance: 12mΩ Drain-source voltage: 150V Power dissipation: 266W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI090N15D2-AQ | Diotec Semiconductor | D2PAK, N, 150V, 90A, 12m, 175C, AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI096N03PQ | Diotec Semiconductor | PowerQFN 5x6, N, 30V, 96A, 3.5m, 175C | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI096N03PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 96A; Idm: 400A; 48W; PQFN5X6 Drain current: 96A Pulsed drain current: 400A Case: PQFN5X6 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 57nC On-state resistance: 3.5Ω Drain-source voltage: 30V Power dissipation: 48W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI097N15D2 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 97A; Idm: 390A; 166W Drain current: 97A Pulsed drain current: 390A Case: D2PAK; TO263AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 78nC On-state resistance: 11mΩ Drain-source voltage: 150V Power dissipation: 166W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI097N15D2 | Diotec Semiconductor | D2PAK, N, 150V, 97A, 11 m, 150C | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI0A35N06PGK | Diotec Semiconductor | Description: DI0A35N06PGK Packaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 223mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI0A35N06PGK | Diotec Semiconductor | MOSFETs DFN1006-3, N, 60V, 0.35A, 1.4?, 150C | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| DI0A35N06PGK-AQ | Diotec Semiconductor | MOSFETs MOSFET, DFN1006-3, 60V, 0.35A, 150C, N, AEC-Q101 | на замовлення 8434 шт: термін постачання 21-30 дні (днів) |
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| DI0A35N06PGK-AQ | Diotec Semiconductor | Description: MOSFET N-CH 60V 350MA SC-101 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 223mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V Qualification: AEC-Q101 | на замовлення 10004 шт: термін постачання 21-31 дні (днів) |
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| DI0A35N06PGK-AQ | Diotec Semiconductor | Description: MOSFET N-CH 60V 350MA SC-101 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 223mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V Qualification: AEC-Q101 | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| DI0A4N45SQ2 | Diotec Semiconductor | Description: MOSFET 2N-CH 450V 0.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 | на замовлення 4115 шт: термін постачання 21-31 дні (днів) |
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| DI0A4N45SQ2 | Diotec Semiconductor | MOSFETs MOSFET, SO-8, 450V, 0.4A, 150C, N | на замовлення 3440 шт: термін постачання 21-30 дні (днів) |
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| DI0A4N45SQ2 | Diotec Semiconductor | Description: MOSFET 2N-CH 450V 0.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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